• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.8
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• pp.126-132
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• 2010

This paper presents dielectric characteristics of $N_2$ gas under impulse voltages in a quasi-uniform electric field gap. The experiments were carried out at the test gap applied by the 1.2/50[${\mu}s$] lightning impulse voltage, 180/2500[${\mu}s$] switching impulse voltage, 500[ns]/1[MHz] very fast transient overvoltage(VFTO). The gap separation of sphere-to-plane electrodes was 14[mm] and the electric field utilization factor was about 71.2[%]. The gas pressure ranges from 0.2 to 0.6[MPa]. As a result, the electrical breakdowns are occurred by streamer discharge. Breakdown voltages are linearly increased with the gas pressure and the highest breakdown voltage is appeared under the VFTOs having fast rising time. Breakdown voltages under the positive impulse voltages were higher than those under the negative ones, and also the time to breakdown in the positive polarity is longer than that in the negative polarity.

• Journal of IKEEE
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• v.22 no.4
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• pp.916-921
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• 2018

In this paper, we analyzed the power MOSFET devices for high voltage and high current operation. 4H-SiC was used instead of Si to improve the static characteristics of the device. Since 4H-SiC has a high critical electric field due to wide band gap, 4H-SiC is more advantageous than Si in high voltage and high current operation. In the conventional VDMOSFET structure using 4H-SiC, the breakdown voltage is limited due to the electric field crowding at the edge of the p-base region. Therefore, in this paper, we propose a Curvature VDMOSFET structure that improves the breakdown voltage and the static characteristics by reducing the electric field crowding by giving curvature to the edge of the p-base region. The static characteristics of conventional VDMOSFET and curvature VDMOSFET are compared and analyzed through TCAD simulation. The Curvature VDMOSFET has a breakdown voltage of 68.6% higher than that of the conventional structure without increasing on-resistance.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.103-109
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• 2010

In this paper, breakdown characteristics of soil in a coaxial cylindrical electrode system stressed by impulse currents were experimentally investigated. The breakdown voltage and current waveforms for 4 types of soils were measured, and the threshold electric field intensity, the time-lag to breakdown and the voltage-current (V-I) curves were analyzed and discussed. As a result, the breakdown voltage and current waveforms are strongly dependent on the grain size of soil, and the voltage and current waveforms for gravel and sand differ from those for silt and loess. The threshold electric field intensity Ec is increased in the order of gravel, sand, loess and silt. The V-I curves for all test samples show a 'cross-closed loop' of ${\infty}$-shape. Also, the time-lag to breakdown for gravel and sand are longer than those for silt and loess. It is expected that the results presented in this paper will provide useful information on the design of improving transient performance of a grounding electrode system subjected to lightning current considering the soil ionization.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.4
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• pp.87-95
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• 1999

A primary limitation of the awlication of New class of solid state high power, high speed electronic device, narrely, the Photo-Conductive Power Switch(PCPS) is that the switches flashover at the surlace under average awlied fields much less than the bulk breakdown field of the semiconductor in most cases. The only way overcome those problffi1 and has a workable compact solid state switch is to passivate the surlace by a solid state dielectric material. In this experirrentation, The voltage withstands of Silicon is to be severely degraded when operated in vacuum(10[kV/cm]) and the perlormance is improved when operated in air(30[kV/cm[), in SF6(80~100[kV/cm]). After the passivation, the device had a breakdown field in vacuum and air at a field as high as the unpassivated device in SF6. A experirrent results show passivated devices have excellent breakdown field. In this paper, We improved the main properties and mechanism of the silicon breakdown before and after passivation under high field. field.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.599-606
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• 2001

In this paper, the ac breakdown characteristics of pure Ar, Kr and $N_2$ gas with gas pressure range of 58.8-137.3[kPa] under uniform and non-uniform fields were investigated, and the measured values were compared with those In Ar/$N_2$ and Kr/$N_2$ gas mixtures with pressure varying. Summarizing the experimental results, the breakdown voltages of Pure $N_2$gas, under uniform and non-uniform fields, were increased about 4.8 and 1.1 times than those of pure Ar gas, and about 4.4 and 1.2 times than those of pure Kr gas, and the ac breakdown voltage increased with the pressure increasing. The breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of Pure $N_2$ gas. In case of Ar(85%)/$N_2$ (15%) and Ar(70%)/$N_2$ (30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.8 and 2.2 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, in case of Kr(85%)/$N_2$ (15%) and Kr(70%)/$N_2$ (30%) gas mixtures comparing to the pure Kr gas, the breakdown voltages under uniform field were increased about 1.7 and 2.0 times, and under non-uniform field were increased about 1.0 and 1.2 times. Corona inception voltage of Kr(70%)/$N_2$(30%) gas mixtures under non-uniform fields were increased about 1.28 times than those of Ar(70%)/$N_2$ (30%) gas mixtures. In case of practical incandescent lamps, luminous and lifetime of Kr(70%)/$N_2$ (30%) gas mixtures were increased about 1.15 and 1.21 times than those of Ar(70%)/$N_2$ (30%) gas mixtures.

• Nuclear Engineering and Technology
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• v.20 no.4
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• pp.246-252
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• 1988

Experiments on the hydrogen gas breakdown for plasma initiation in the KAERIT tokamak are described. The influence of the applied loop voltage, toroidal magnetic field, gas filling pressure, error magnetic field, and preionization is studied. It is concluded that the magnitude of the error field is the most important factor for successful discharge initiation. The gas breakdown voltage becomes minumum when the external compensating field most effectively corrects the net error field. Even though preionization effect is not prominent, it is exhibited more easily in the case of worse confinement. Discharge initiation conditions experimentally determined are compared with those calcuated from a theoretical model. Some other unknown physical processes maintain the operation range somewhat narrower than predicted by the present theoretical model. However, this model is adequate for the breakdown phase of tokamaks.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.377-380
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• 2006

Manufacturing process of Ti-6Al-4V alloy billet was investigated with FEM simulation and experimental analysis. Before the breakdown process of Ti-6Al-4V alloy ingot, FEM simulation for the breakdown processes of Ti-6Al-4V alloy ingot was used to calculate the forging load and state variables such as strain, strain rate and temperature. In order to breakdown the ingot structure and make an equiaxed structure billet, two different processes were employed for a VAR/VAR processed Ti-6Al-4V alloy ingot. Firstly, the ingot was cogged in single-phase $\beta$ field at the temperature of $1,100^{\circ}C$. In the process, the coarse and inhomogeneous structure developed by the double melting process was broken down. The second breakdown was performed by upsetting and cogging processes in $\alpha+\beta$ phase field to obtain the microstructure of fine equixed $\alpha$ structure in the matrix of transformed $\beta$. Finally, the mechanical properties of Ti-6Al-4V alloy billet made in this work were compared with those of other billet and ring product.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.22-23
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2140-2142
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• 2005

This paper presents the experimental results on the preliminary breakdown characteristics under a highly non-uniform electric field in $SF_6/CO_2$ gas mixtures. The impulse preliminary breakdown developments are investigated by the measurements of corona current and light emission images. As a result, the preliminary breakdown development mechanisms for both positive and negative polarities are same. The first streamer corona is initiated at the tip of needle electrode, and the leaders develop with a stepwise propagation and bridge the test gap. The pause time of leader pulses in the positive polarity is significantly shorter than that in the negative polarity. Also, the time interval between the first streamer corona onset and breakdown in the negative polarity was much longer than that in the positive polarity The discharge channel paths in the positive polarity were zigzag. On the other hands, the leader channel in the negative polarity was thicker than that in the positive polarity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.981-986
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.