• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.397-401
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• 2011

The response of lightning impulse voltage was explored in dielectric liquids employing hydrodynamic modeling with three charge carriers using the finite element method. To understand the physical behavior of discharge phenomena in dielectric liquids, the response of step voltage has been extensively studied recently using numerical techniques. That of lightning impulse voltage, however, has rarely been investigated in technical literature. Therefore, in this paper, we tested impulse response with a tip-sphere electrode which is explained in IEC standard #60897 in detail. Electric field-dependent molecular ionization is a common term for the breakdown process, so two ionization factors were tested and compared for selecting a suitable coefficient with the lightning impulse voltage. To stabilize our numerical setup, the artificial diffusion technique was adopted, and finer mesh segmentation was generated along with the axial axis. We found that the velocity from the numerical result agrees with that from the experimental result on lightning impulse breakdown testing in the literature.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.168-171
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• 1999

This paper describes the influence of conducting particle within the coaxial cylindrical electrodes gap under alternating voltage condition investigated using charge simulation method. If the conducting particles precent in the gas insulated system, they can cause decrement of breakdown voltage. Thus, three dimensions computations of electric fields and electrostatic forces have been carried out according to particle location. The results show a good agreement with those of outside country, which can offer a practical reference on the insulation design of domestic GIS.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.609-613
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• 2023

In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 ㎛, and the on-state voltage drop was the lowest at 3.5 ㎛. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1548-1549
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• 2011

High voltage cryogenic insulation issues need to be addressed in order to promote the commercialization of high temperature superconducting (HTS) equipment. As a fundamental step in the development of the optimum bushings for HTS devices, the breakdown characteristics of liquid nitrogen mixed with liquefied insulating gases such as $N_2$, $SF_6$, and $CF_4$ have been investigated. In order to investigate the possibility of substituting $CF_4$ gas for $SF_6$ gas for the bushings of HTS electrical equipment, AC withstanding voltage tests have been performed. In this paper, finding the maximum electric field $E_{max}$ using utilization factor ${\eta}$. This result is applicable to developing the real scale HTS equipment of the design parameters.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.34-39
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• 2006

In high-voltage devices such as thyristor, beveling is mostly used junction termination method to reduce the surface electric field far below the bulk electric field and to expand the depletion region thus that breakdown occurs in the bulk of the device rather than at the surface. However, coating material used to protect the surface of the device contain so many charges which affect the electrical characteristics of the device. And device reliability is also affected by this charge. Therefore, it is needed to analyze the effect of surface charge on electrical characteristics of the device. In this paper, we analyzed the breakdown voltage and leakage current characteristics of the thyristor as a function of the amount of surface charge density. Two dimensional process simulator ATHENA and two-dimensional device simulator ATLAS is used to analyze the surface charge effects.

• Journal of Wind Energy
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• v.15 no.2
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• pp.5-9
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• 2024

This paper describes the insulation breakdown characteristics of 72.5 kV dry-air insulated switchgear under development for installation in a wind power generator when a lightning impulse voltage is applied. For this study, the weak point of insulation due to the electric field concentration of the switchgear's internal shape was identified by finite element method (FEM) analysis, and the shape was actually simulated to measure and analyze the polarity of the lightning impulse voltage and the insulation breakdown characteristics according to the gas pressure at dry-air pressures of 0.1 Mpa to 0.45 Mpa. This study derives the maximum electric field with a 50 % discharge probability for each switchgear internal insulation vulnerable point based on the actual test and electrical simulation, which will be useful as reference data for supplementing and changing insulation design in the future.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.69-74
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• 2018

With the increasing development of industrial society and the availability of high quality electrical energy, the simplification of operation and maintenance procedures is required, in order to ensure the reliability and safety of electrical systems. In this paper, the dielectric breakdown characteristics of $N_2-O_2$ mixed gas solid insulation, which is used as an alternative to SF6 in various electric power facilities, are verified. When the gas mixture has a composition ratio similar to that of the atmosphere, the dielectric breakdown characteristics are relatively stabilized. It was confirmed that the breakdown voltage of the gas in the electrode near an equal electric field increased with increasing pressure according to Paschen's rule. The breakdown voltage of the surface increased linearly with increasing pressure, and the difference was caused by the mixing ratio of $O_2$ gas. This change in the surface insulation breakdown voltage was caused by the influence of the electrically negative $O_2$ gas and the intermolecular collision distance. In this study, the influence of the intermolecular impact distance was larger (than that in the absence of the electrically negative $O_2$ gas). The breakdown voltage relation applicable to Teflon according to the surface insulation characteristics was calculated. The characteristics of the surface insulation properties of Teflon, which is used as a solid insulation material, were derived as a function of pressure. It is thought that these results can be used as the basic data for the insulation design of electric power facilities.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.599-606
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• 2001

In this paper, the ac breakdown characteristics of pure Ar, Kr and $N_2$ gas with gas pressure range of 58.8-137.3[kPa] under uniform and non-uniform fields were investigated, and the measured values were compared with those In Ar/$N_2$ and Kr/$N_2$ gas mixtures with pressure varying. Summarizing the experimental results, the breakdown voltages of Pure $N_2$gas, under uniform and non-uniform fields, were increased about 4.8 and 1.1 times than those of pure Ar gas, and about 4.4 and 1.2 times than those of pure Kr gas, and the ac breakdown voltage increased with the pressure increasing. The breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of Pure $N_2$ gas. In case of Ar(85%)/$N_2$ (15%) and Ar(70%)/$N_2$ (30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.8 and 2.2 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, in case of Kr(85%)/$N_2$ (15%) and Kr(70%)/$N_2$ (30%) gas mixtures comparing to the pure Kr gas, the breakdown voltages under uniform field were increased about 1.7 and 2.0 times, and under non-uniform field were increased about 1.0 and 1.2 times. Corona inception voltage of Kr(70%)/$N_2$(30%) gas mixtures under non-uniform fields were increased about 1.28 times than those of Ar(70%)/$N_2$ (30%) gas mixtures. In case of practical incandescent lamps, luminous and lifetime of Kr(70%)/$N_2$ (30%) gas mixtures were increased about 1.15 and 1.21 times than those of Ar(70%)/$N_2$ (30%) gas mixtures.

• ETRI Journal
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• v.34 no.1
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.