• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2015년도 춘계 학술논문 발표대회
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• pp.251-252
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• 2015

Enough school facility maintenance data should be accumulated in a database or data warehouse in order to supply information about school facility correct maintenance budget plan, budget assignment, and cycle and rate of maintenance or replacement. For those, this research analyze the present school facility maintenance practice and budget and construction cost structure. In order to solve the problems, this study analyze the present practice of maintenance and replacement and obtain LCC(Life cycle cost) data, perform expert interview and then establish construction work breakdown structure of maintenance of educational facility by combining work breakdown structure(WBS) and cost breakdown structure(CBS).

• Journal of Construction Engineering and Project Management
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• 제5권1호
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• pp.32-39
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• 2015

Construction industry is an aggregate of information that diverse information is integrated and controlled. To implement successful construction projects, it can be said that the information management is very important. In particular, because information of construction sites is controlled in a form of documents, importance of the document management in construction has been increased. But, by controlling information through documents, there are difficult problems in writing and classification of the documents and preservation and utilization of the information. Also, due to incompletion of the information management system, difficulty in systematic info management arises. For this reason, this study intends to suggest the document information breakdown structure for controlling document info efficiently which is generated at construction sites. For this, through the examination of preceding studies, establishment of the concept of the document info breakdown structure, the space breakdown structure, and the info breakdown structure, availability of document information is intended to heighten.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2011년도 추계 학술논문 발표대회
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• pp.65-67
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• 2011

It is necessary to the development of the best maintenance system for applying the long-term maintenance plan using the cost breakdown structure in the educational facilities. This study developed the cost breakdown structure for the best maintenance system using the delphi method. For the convenience of maintenance, the maintenance cost breakdown structures are separated into building exterior wall, building inside wall, electric installation, heating installation and outdoor facilities. And these results atomized in each parts. And this study constructed the cost breakdown structure to maintenance's practicality and effectiveness through the expert analysis.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2014년도 춘계 학술논문 발표대회
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• pp.52-53
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• 2014

The Work Breakdown Structure (WBS) is a primary tool which provides a framework that defines clear scope of all deliverables throughout the project life cycle. Once the WBS is established in projects, it should allow project team members to measure and manage work performances by the WBS; further, it should provide a reference point when any work scope needs to be redefined. Based on the project information in the Progress and Performance Measurement System (PPMS) of UAE's Barakha Nuclear Power Plant (BNPP) projects, an attempt was made to develop a new WBS which provides hierarchical and systematical decomposition of the total work scope of NPP construction projects while avoiding from the preexistence concept in Korean NPP projects that the WBS is a combination of Physical Breakdown Structure (PBS) and Functional Breakdown Structure (FBS). The unique features of the new WBS are as follows: (1) defined the definition of each level of the WBS, (2) subdivided the WBS into 5 hierarchical levels, and (3) adopted globally used general coding structure. The new WBS provides a basic hierarchical structure for the project scope and can be used as a basic tool for schedule control, performance measurement, project status monitoring, and communication among project participants. In addition, by putting the Work Package (WP) under the WBS, the Earned Value Management System (EVMS) per WP can be utilized for the project.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.527-533
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• 1994

In this study, it was studied on dielectric breakdown strength and thennostability properties due to the structure variation of matrix resin and treatment of coupling agent of epoxy insulating materials. The interpenetrating network structure was formed by simultaneous heating curing the epoxy resin with single network structure and the methacrylic acid resin. Also inner structure was observed and the glass transition temperature was measured on these three type specimens. Dielectric breakdown properties were investigated by applying DC, AC and impulse voltage. As a result, the glass transition temperature and the dielectric breakdown strength of specimen with interpenetrating network structure was more higher than another two type specimens.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2012년도 춘계 학술논문 발표대회
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• pp.117-118
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• 2012

This study has been reorganizing a standard breakdown structure of temporary technique focused on construction site. For this, first of all we, the authors, reviewed features and present statuss of construction temporary technique, and could develop to the standard breakdown structure through studying a construction site and researching a delphi method. By using the standard breakdown structure obtained from this study, it is expected that the application of to information of construction business and plan to a schedule and a work.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1686-1688
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• 1999

The FLR(Field Limiting Ring) structure with a buried ring is proposed to improve breakdown voltage. The breakdown characteristics of proposed structure is verified by two-dimensional device simulator. ATLAS. It has shown that the breakdown voltage of the proposed structure is increased by 11 % compared with that of the FLR.

• 전자공학회논문지A
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• 제32A권12호
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• pp.159-165
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• 1995

A gate-recessed structure is introduced to SOI MOSFET's in order to increase the source-to-drain breakdown voltage. A significant increase in the breakdown voltage is observed compared with that of a planar single source/drain SOI MOSFET without inducing the appreciable reduction of the current drivability. We have analyzed the origin of the breakdown voltage improvement by the substrate current measurements and 2-D device simulations, and shown that the breakdown voltage improvement is caused by the reductions in the impact ionization rate and the parasitic bipolar current gain.

• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.376-382
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• 1994

In this study we developed a program(DEVSIM) to simulate the two dimensional distribution of the electrostatic potential and the electric field of the arbitrary structure consisting of GaAs/AlGaAs semiconductor and metal as well as dielectric. By the comparision of the electric field distribution of GaAs MESFETs with the various recess gates we proposed a suitable device structure to improve the breakdown characteristics of MESFET. According to the results of simulation the breakdown characteristics were improved as the thickness of the active epitaxial layer was decreased. And the planar structure, which had the highly doped layer under the drain for the ohmic contact, was the worst because the highly doped layer prevented the space charge layer below the gate from extending to the drain, which produced the narrow spaced distribution of the electrostatic potential contours resulting in the high electric field near the drain end. Instead of the planar structure with the highly doped drain the recess gate structure having the highly doped epitaxial drain layer show the better breakdown characteristics by allowing the extention of the space charge layer to the drain. Especially, the structure in which the part of the drain epitaxial layer near the gate show the more improvement of the breakdown characteristics.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.