• Korean journal of food and cookery science
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• v.24 no.1
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• pp.23-30
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• 2008

Sulgidduk samples made with additions of 2, 4, 6, 8, and 10% Houttuynia cordata Thunb. powder, and a control were examined for quality characteristics such as moisture content, water activity, color, gelatinization properties, textural characteristics, and sensory qualities in order to determine the optimal ratio of Houttuynia cordata Thunb. powder in the formulation. The moisture contents among the samples ranged from 41.98% to 44.97%, and increased as the content of Houttuynia cordata Thunb. powder increased. The water activities of the samples were not significantly different. As the Houttuynia cordata Thunb. powder content increased, the redness and yellowness of the samples also increased, but lightness decreased. For the gelatinization properties, the additions of Houttuynia cordata Thunb. powder caused decreases in peak viscosity (P) and holding strength viscosity (H). Furthermore, final viscosity (F), setback, and time to peak viscosity decreased with increasing Houttuynia cordata Thunb. powder content; however, breakdown and temperature to peak viscosity were not significantly different among the samples. Hardness and gumminess decreased with increasing Houttuynia cordata Thunb. powder content, and adhesiveness, cohesiveness, chewiness, and resilience also tended to decrease; however, springiness was not significantly different among the samples. In the consumer acceptance test, as the content of Houttuynia cordata Thunb. powder increased, the scores of all evaluated characteristics decreased; while the characteristic intensity ratings showed the reverse effect, and the 2 and 4% Houttuynia cordata Thunb. powder samples obtained fairly good scores. In conclusion, the results indicate that adding $2{\sim}4%$ Houttuynia cordata Thunb. powder to Sulgidduk is optimal, providing good physiological properties and reasonably high overall consumer acceptability.

• Herbal Formula Science
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• v.24 no.3
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• pp.153-161
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• 2016

Chronic alcoholic myopathy is one of the most common skeletal muscle disorders. It is characterized by a reduction in the entire skeletal musculature, skeletal muscle weakness, and difficulties in gait. Patients with alcoholic hepatitis and cirrhosis have severe muscle loss that contributes to worsening outcome. Although the myopathy selectively affects Type II (fast twitch, glycolytic, anaerobic) skeletal muscle fibers, total skeletal musculature is reduced. The severity of the muscle atrophy is proportional to the duration and amount of alcohol consumed and leads to decreased muscle strength. The mechanisms for the myopathy are generally unknown but it is not due to overt nutritional deficiency, nor due to either neuropathy or severe liver disease. Skeletal muscle mass and protein content are maintained by a balance between protein synthesis and breakdown and in vivo animal models studies have shown that ethanol inhibits skeletal muscle protein synthesis. Daekumeumja is a traditional Korean medicine that is widely employed to treat various alcohol-induced diseases. Muscle diseases are often related to liver diseases and conditions. The main objective of this study was to assess that Daekumeumja extract could have protective effect against alcoholic myopathy in a Sprague-Dawley rat model. Rats were orally given 25% ethanol (5ml/kg, body weight) for 8 weeks. After 30 minutes, rats were administrated with Daekumeumja extract. Controls were similarly administrated with the vehicle alone. The weights of gastrocnemius, soleus and plantaris muscles were assessed and the morphologic changes of gastrocnemius and plantaris muscles were also assessed by hematoxylin and eosin staining. In results, The muscles from ethanol treated rats displayed a significant reduction in muscle weight and average cross section area compared to Normal group. Daekumeumja extract treated group showed increased muscle weight and muscle fiber compared to the ethanol treated group. It was concluded that Daekumeumja extract showed ameliorating effects on chronic alcohol myopathy in skeletal muscle.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Transactions on Electrical and Electronic Materials
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• v.13 no.3
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• pp.116-120
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• 2012

In this paper, ZnO-Epoxy nanocomposites (NEP) were prepared and epoxy composites that contain 5 wt% micro ZnO (MEP) and deliberately not well dispersed nano ZnO (NDNEP) were also prepared for purpose of comparison. The effects of the particle size and dispersion of ZnO on dielectric properties of epoxy resin were chiefly studied. Test results showed that: at a loading of 5 wt%, the three epoxy composites seem to have no significant difference on resistivity compared to epoxy resin; Dielectric constants of all the epoxy composites are also basically the same but they are bigger compared to that of the pure epoxy resin (unfilled); Dielectric dissipation factors ($tan{\delta}$) of NDNEP is greater than that of NEP and MEP. NEP has the minimum dielectric loss factor, whereas dielectric loss factors of the three epoxy composites are larger than that of the pure epoxy resin. The decreasing order of electrical breakdown strength for the three epoxy composites and for the pure epoxy resin is as follows: NEP>MEP>NDNEP>EP. Finally, in order to explain the experimental results the aggregation interface phase was proposed. Furthermore, addition of well dispersed nano filler has proved to have a positive effect on the improvement of the dielectric properties of epoxy resin.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• Korean Journal of Heritage: History & Science
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• v.46 no.2
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• pp.136-149
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• 2013

We studied the characteristics and the growth mechanism of surface cracks from the Naksansa seven-storied stone pagoda(Treasure No. 499). The pagoda is composed of both medium-grained, porphyritic biotite granite and hornblende-biotite granite. Alkali feldspar megacrysts are easily found as phenocrysts in the rocks. Surface cracks intensely developed at the lower part of the stone pagoda, and their directions are of vertical, horizontal, and diagonal. The rocks of the pagoda have intrinsic microcracks which can be defined as rift and grain rock cleavages. Both rock cleavages seems likely to have led to the crack growth and consequently to the mechanical deterioration of the pagoda. The vertical cracks developed parallel to the vertical compressive stress, whereas horizontal ones formed by tensile strength normal to the vertical compression. In addition mineral cleavages and twin planes of alkali feldspar phenocrysts seems to have been closely related to the mechanical breakdown of the rocks in the NE part of the pagoda.

• Journal of Convergence for Information Technology
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• v.9 no.7
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• pp.33-40
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• 2019

As aerospace industry has been activated recently, it is required to commercialize composite analysis software. Until now, commercial software has been mainly used for analyzing composites, but it has been difficult to use due to high price and limited functions. In order to solve this problem, automatic analysis software for both in-plane and corner radius strength, which are all made on-line and generalized, has recently been developed. However, these have the disadvantage that they can not be analyzed simultaneously with multiple failure criteria. In this paper, we propose a method to greatly improve the processing speed while simultaneously handling the analysis of multiple failure criteria using a parallel processing platform that only works with a GPU equipped with a CUDA core. We have obtained satisfactory results when the analysis speed is experimented on the vast structure data.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.613-618
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• 2012

We report on electrical and mechanical properties of silicon nitride ($SiN_x$) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at $200^{\circ}C$ from $SiH_4$ highly diluted in $N_2$. The films were also prepared from $SiH_4$ diluted in He for comparison. The $N_2$ dilution was also effective in improving adhesion of the $SiN_x$ films, fascilitating construction of thin film transistors (TFTs). Metal-insulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the $SiN_x$ films from $N_2$-diluted $SiH_4$ were estimated to be $1{\times}10^{13}{\Omega}{\cdot}cm$, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of $0.16cm^2/Vs$, a threshold voltage of 3 V, a subthreshold slope of 1.2 V/dec, and an on/off ratio of > $10^6$.