• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집A
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• pp.117-122
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• 2001

For two kinds of 25Cr-20Ni stainless steels, SUS310J1TB TB and SUS310S with and without a small amount of Nb and N, creep behavior has been studied in a stress and temperature range from 147 to 392MPa and from 923 to 973K with a special reference to tertiary creep. The average creep life of SUS310J1TB was about 100 times longer than that of the SUS310S. The apparent activation energy for the initial creep rate was 330 kJ/mol in SUS310J1TB, while that of the SUS310S was 274 kJ/mol in a power law creep region and 478 kJ/mol in a region of power law breakdown (PLB). The activation energy for SUS310S below PLB is close to the that for self-diffusion. When compensating for the temperature dependence of the Young's modulus and the omega value, it was found that the apparent activation energy for SUS310J1TB was reduced to the activation energy for diffusion of chromium atom in a gamma steel. The stress exponent of SUS310S was about 12 above PLB and 5.1 in a power law creep region. Notwithstanding that the creep condition for SUS310J1TB was in a power law creep region, its stress exponent was 8.3 larger than that of SUS310S corresponding to the same creep conditions. This was ascribed to the presence of fine precipitates in SUS310J1TB.

• 전기학회논문지P
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• 제67권3호
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• pp.160-167
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• 2018

In this paper, a black box, which is provided the reliability and user safety of home battery energy storage system connected with solar energy generation, is developed. In the developed scheme, a status and diagnosis data of battery management system, power conditioning system, solar energy generation and grid is measured. This status and diagnosis data is stored and displayed in the developed black box. In addition, this status and diagnosis data is stored and displayed in a monitoring system and a smart phone of user. A performance evaluation of the developed black box is carried out using emulator of home battery energy storage system connected with solar energy generation. Consequently, the developed black box is proved its superiority of the reliability and user safety.

• 조명전기설비학회논문지
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• 제24권7호
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• pp.41-46
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• 2010

With the improvement of industrial society, high quality electrical energy, simplification of operation and maintenance, and ensuring reliability are being required. Also we request an urgent change from $SF_6$ gas to an environment-friendly gas insulation material. In this paper, the experiments of breakdown characteristics by pressure and gap change of $N_2/O_2$ mixture gas through a GIS (Gas Insulated Switchgear) model were described. This paper reviews basic data of the surface discharge characteristics for Teflon resin in not only pure $N_2$, $N_2:O_2$ mixture gas as being focused on environmentally-friendly insulating gas, but also $SF_6$. Also, insulation characteristics by breakdown voltage and surface discharge voltage of $N_2:O_2$ mixture gas in the experimental chamber were studied.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.16-20
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• 2006

In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.

• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.78-82
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• 2020

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga₂O₃ are demonstrated. A Si-doped Ga₂O₃ epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga₂O₃ substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10⁹, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga₂O₃ for power device applications including electric vehicles, railways, and renewable energy.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2015년도 추계 학술논문 발표대회
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• pp.81-82
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• 2015

BIM has been a reliable construction project management tool to handle various kinds of construction information generated in the facility life cycle. To take these advantages, researchers have been promoted numerous studies in a residential, a commercial, and an educational facilities with a large number of on-going projects. However, despite running as the role of essential energy supplier, power plant related BIM research is relatively insufficient than others. In particular, due to the extending of the facility service period and the requirement of the complicated construction project management for 'overhaul' and 'repowering' in the power plant maintenance phase, the needs for using BIM have been increased gradually. For using BIM based maintenance, it is needed to consider an information collecting methods and necessary to develop an appropriate breakdown structure to share information. Therefore, 'EBS' is produced by reviewing the previous research related to BIM and analyzing the repair activities in the maintenance phase. Proposed 'EBS' must be useful not only a judgment between capital expenditure versus revenue expenditure but also appropriate maintenance strategies development for property management.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1073-1077
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.

• Journal of Electrical Engineering and Technology
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• 제11권3호
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• pp.683-689
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• 2016

Most outdoor solid insulators may suffer from surface degradations due to non-stationary currents that flow on the insulator surface. These currents may be classified as leakage, discharge and tracking currents due to their disturbing potencies respectively. The magnitude of these currents depends on the degree of the contamination of surface. The leakage signals are followed by discharge signals and tracking signals which are capable of forming carbonized tracking paths on the surface between high voltage and earth contacts (surface tracking). Surface tracking is one of the most breakdown mechanisms observed on the solid insulators, especially polymers which may cause severely reduced lifetime. In this study the degradations observed on polyester resin based insulators are investigated according to the IEC 587 Inclined Plane Test Standard. The signals are monitored and recorded during tests until surface tracking initiated. In order to prevent total breakdown of an insulator, early detection of tracking signals is vital. Continuous Wavelet Transform (CWT) is proposed for classification of signals and their energy levels observed on the surface. The application of CWT for processing and classification of the surface signals which are prone to display high frequency oscillations can facilitate real time monitoring of the system for diagnosis.

• Nuclear Engineering and Technology
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• 제20권4호
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• pp.246-252
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• 1988

KAERIT 토카막 장치의 플라즈마 생성을 위한 수소기차 방전실험에 관해 기술하였다. 이 실험에서는 일주전압, 토로이달 자장, 충전기체 압력, 오차자장 및 예비전리 등이 방전시작에 미치는 영향이 연구되었다. 오차자장은 방전에 가장 큰 영향을 미치는 인자로서 방전전압이 최소가 되는 것은 결국 오차자장 성분을 가장 잘 상쇄시켰을 때였다. 예비전리의 효과는 전반적으로 두드러지지는 않았지만 밀폐 성능이 나쁠수록 상대적으로 크게 나타났다. 실험적으로 구해진 방전시작조건은 이론적인 모델의 계산결과와 비교하였다. 실험에서의 방전영역이 이론적인 계산결과에 비해 줄어드는 경향을 보이고 있는 것은 고려되지 않은 다른 인자에 기인하는 것으로 판단되지만 토카막의 방전시작단계를 다루기에는 이 모델로도 충분하다.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.208-211
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• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.