• 전기의세계
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• v.17 no.4
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• pp.13-17
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• 1968

Up to the present time, laminated insulators have been used for the insulation of electrical apparatus. The reason to use laminated insulators is based on the fact that electrical break-down voltage depends on the weak spot theory. If thin insulators are laminated, the weak spot existence probability across the electrodes decreases according to the number of lamination. In this test, the effect of the number of lamination and the thickness of each lamination sheets on their break-down voltage are discussed. The results taken as a whole indicate; (1) The break-down voltage of laminated insulators composed of thin sheets are higher than those of thick sheets, however, the voltage may become the same beyond any definite thickness of laminated insulators. (2) When the lamination sheets becomes thinner, the variation of break-down voltage is great according to the number of lamination sheets. (3) It may by effective to use laminated insulators even when the insulators are aparted from the electrodes.

• 전기의세계
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• v.14 no.5
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• pp.15-19
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• 1965

Laminated insulators are largely used in the insulation of electric apparatus. This reason is based on the fact that the solid state insulators meet to electrical break-down by the weak spot theory. Thus the break-down voltage of the laminated insulators are generally affected by the density, distribution and the form of the weakspot contained in the each laminated thin insulator. In this experiment the effects of the characterics of weak spots are not studied, but the effects of the number of lamination and the pressure applied on the laminated insulator on its break-down voltage are investigated experimentaly, and got some interesting results which are reparted as follows.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.376-377
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• 2009

In the study the affect of $SiO_$ depending on the characteristics of break-down, we have experimented the break-down for the $SiO_$ and variable temperature change after mading nano $SiO_$ of the diameter 12 [nm] at the epoxy resin. As the experimental results, we have continued that the break-down strength is increased at the adding change but the break-down strength is decreased again as the 0.4 [wt%] standard. Also, the break-down voltage is not changed at 25, 50 [$^{\circ}C$] as the temperate change. But break-down voltage is largely changed when temperate is rising up.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• Proceedings of the KIEE Conference
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• summer
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• pp.1121-1123
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• 2004

Characteristics of the break down current of HTS tape with different insulator are described. The various insulators are utilized for enduring the high voltage in superconducting power devices. The break down current of HTS tape largely depends on insulators wound round HTS tape. In this research, The break down currents of Bi-2223 tape, which is widely used for superconducting power devices are tested and discussed. It is expected that results from this study can be utilized as basic data in designing superconducting power devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• Proceedings of the KIEE Conference
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• 1984.07a
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• pp.230-231
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• 1984

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.66-69
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• 2008

In this paper, The author present a load current feed-forward compensator by method that improve voltage controller of Step-down Chopper to get stable output voltage to sudden change of load current. To confirm the characteristicsof a presented load current feed -forward compensator compared each transfer function of whole system that load current feed-forward compensator is added with transfer function of whole system that existent voltage controller is included using Mason gains formula in Root locus and Bode diagram. As a result the pole of system is improved, extreme point of the wave and system improves, and size of peak value and phase margin of break frequency in resonance frequency confirmed that is good. Therefore, presented control technique could confirm that reduce influence by perturbation and improves stationary state and dynamic characteristics in output of Step-down Chopper.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.200-202
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• 2004

Characteristics of the break down current of HTS tape with different insulator are described. The various insulators are utilized for enduring the high voltage in superconducting power devices. The break down current of HTS tape largely depends on insulators wound round HTS tape. In this research, The break down currents of Bi-2223 tape, which is widely used for superconducting power devices are tested and discussed. It is expected that results from this study can be utilized as basic data in designing superconducting power devices.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.293-296
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• 1990

In this work, we reviewed AC break-down voltage characteristics in $SF_6$ Gas with spacer under nonuniform field, using the electrode construction of model spacer and simple protrusion. We cleared that breakdown voltage and surface flashover strongly depend on the position of spacer's insert.