• Current Photovoltaic Research
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• v.2 no.1
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• pp.36-39
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• 2014

Formation mechanism of residual carbon layer, frequently observed in the $CuInSe_2$ (CIS) thin film prepared by direct solution coating routes, was investigated in order to find a way to eliminate it. As a model system, a methanol solution with dissolved Cu and In salts, whose viscosity was adjusted by adding ethylcellulose (EC), was chosen. It was found that a double layer, a top metal ion-derived film and bottom EC-derived layer, formed during an air drying step presumably due to different solubility between metal salts and EC in methanol. Consequently, the top metal ion-derived film acts as a barrier layer inhibiting further thermal decomposition of underlying EC, resulting a formation of bottom carbon residue layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.882-885
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• 2004

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• International Journal of Naval Architecture and Ocean Engineering
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• v.6 no.1
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• pp.151-161
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• 2014

In this study, an experimental investigation has been made of the applicability of outer-layer vertical blades to real ship model. After first devised by Hutchins and Choi (2003), the outer-layer vertical blades demonstrated its effectiveness in reducing total drag of flat plate (Park et al., 2011) with maximum drag reduction of 9.6%. With a view to assessing the effect in the flow around a ship, the arrays of outer-layer vertical blades have been installed onto the side bottom and flat bottom of a 300k KVLCC model. A series of towing tank test has been carried out to investigate resistance (CTM) reduction efficiency and improvement of stern wake distribution with varying geometric parameters of the blades array. The installation of vertical blades led to the CTM reduction of 2.15~2.76% near the service speed. The nominal wake fraction was affected marginally by the blades array and the axial velocity distribution tended to be more uniform by the blades array.

• Journal of the Korean Society for Marine Environment & Energy
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• v.6 no.2
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• pp.38-45
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• 2003

This paper intends to analyze the movement characteristics of the suspended solid(SS) generated in a riprap work which is the most widespread process in harbor construction. The generation and movement behaviors of SS are investigated when 1) basic ripraps (0.001~0.03㎥) are cast for breakwater construction, 2) ripraps are loaded on carrier for riprap casting in the sea-wall construction of dredged material pocket, and 3) ripraps for inner filling are cast. The result of the present study shows that the SS generation is considerable when basic ripraps are cast for breakwater construction and the SS diffusion reaches up to 500m in high tide period. When ripraps are loaded on carrier, the SS is generated by the ripraps running down into sea from carrier, thereby showing a high concentration of SS in the vicinity of carrier. In the surface layer, SS distribution is confined in the vicinity of the carrier due to the prompt sinking of the SS. However the SS in the bottom layer is diffused approximately up to loom and then the SS concentration reaches to the background one. In the riprap (less than 0.03㎥) casting for inner filling using pork crane, SS is diffused approximately up to 300m in the surface layer and more than 300m in the bottom layer. It is quite interesting that the movement of the SS generated in harbor construction is mainly controlled by wind drift in the surface layer and tidal current in the bottom layer, and also the diffusion range of SS in the bottom layer is much larger than that in the surface layer.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.31-36
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• 2001

Dielectric material which is suitably designed for the application of the high-temperature electrostatic chucks(HTESCS) has been developed. Electrical resistivities and dielectric constants of the dielectric layer satisfy the demands for the proper operation of HTESC, and coefficient of thermal expansion(CTE) of the dielectric material matches well that of the bottom insulator so that it secures stable structure. In order to minimize particle contaminations, borosilicate glass(BSG) is selected as a bonding layer between dielectric layer and bottom insulator, and silver is used as a electrode. BSG is solidly bonded between upper dielectric and bottom insulator, and no diffusions or reactions are observed among silver electrode, dielectric, and glass layers. The chucking characteristics of the fabricated HTESC are found to be superior to those of the commercialized one.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.6
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• pp.146-151
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• 2011

Wax spin coating is a part of several wafer handling processes in the silicon wafer polishing station. It is important to ensure the wax layer free of contamination to achieve the high degree of planarization on wafers after wafer polishing. Three-dimensional air flow characteristics in a wax spin coater are numerically investigated using computational fluid dynamics techniques. When the bottom of the wax spin coater is closed, there exists a significant recirculation zone over the rotating ceramic block. This recirculation zone can be the source of wax layer contamination at any rotational speed and should be avoided to maintain high wafer polishing quality. Thus, four air suction ducts are installed at the bottom of the wax spin coater in order to control the air flow pattern over the ceramic block. Present computational results show that the air suction from the bottom is quite an effective method to remove or minimize the recirculation zone over the ceramic block and the wax coating layer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.315-318
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• 1999

We have proposed and fabricated the new bottom-gated polycrystalline silicon (poly-Si) thin film transistor (TFT) with a partial amorphous-Si region by employing the selective laser annealing. The channel layer of the proposed TFTs is composed of poly-Si region in the center and a-Si region in the edge. The TEM image shows that the local a-Si region is successfully fabricated by the effective cut out of the incident laser light in the upper a-Si layer. Our experimental results show that the ON/OFF current ratio is increased significantly by more than three orders in the new poly-Si TFT compared with conventional poly-Si TFT. The leakage current is decreased significantly due to the highly resistive a-Si re TFTs while the ON-series resistance of the local a-Si is reduced significantly due to the considerable inducement of electron carriers by the positive gate bias, so that the ON-current is not decreased much.

• Journal of the Korea Organic Resources Recycling Association
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• v.24 no.3
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• pp.63-74
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• 2016

The objective of this study was to investigate the variations of physico-chemical properties during the swine manure composting, sawdust as the bulking agent was composted at different points (Top layer, Side of middle layer, Bottom layer). Air suction system with constant bottom aeration in bench scale reactors (30 L). The highest temperature was reached in the range of $58^{\circ}C$ to $62^{\circ}C$ on $3^{rd}$ day and this thermophilic phase (> $50^{\circ}C$) was continued for 3 days in all the treatment mixtures. However, the temperature was gradually decreased to room temperature at the end of 60 day composting process. Except control, the discharged ammonia ($NH_3$) was a maximum in the treatment order of Top layer>Bottom layer>Side of middle layer as 500 ppm, 162 ppm and 120 ppm, respectively, on the $4^{th}$ day and showing that Top layer point Air suction produce much more ammonia content than the other point. During the composting process, the total Kjeldahl nitrogen (TKN) was gradually increased due to the mass loss in the composting mixtures. At the same time, C/N ratio was decreased to Top layer, 13; Side of middle layer, 12 and Bottom layer, 13 at Air suction points. The significant reduction of C/N ratio in all different air suction system when manure was matured. The $NH_4-N$ to $NO_3-N$ ratio was recorded as 10.52 at the initial stage of the compost mixtures and reduced to 0.97 (Top layer), 0.70 (Side of middle layer), 3.2 (Bottom layer) because of manure decomposition. The overall results revealed that Top layer and Side of middle layer Air suction is a suitable option when compared other point for high quality composts.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.405-407
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• 2004

We have optimized the low temperature growth of microcrystalline silicon at 80$^{\circ}C$. This material has been used to fabricate bottom gate ${\mu}c$-Si:H TFTs by using a layer-by-layer nitrogenation process. By using this process the amorphous incubation layer can be converted into silicon nitride and leads to an increase in field effect mobility of the TFT

• 한국해양학회지
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• v.18 no.2
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• pp.104-110
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• 1983

The Intermittent phenomena of the turbulent momentrm transports were closely examined in order to know the nature of intermittency and its fluid dynamic implications in the oceanic turbulent boundary layer. Also the connection between the observed intermittency and the bursting phenomenon was studied in detail. In this investigation, strong intermittency of turbulent momentum transports were found and the peak values of Reynolds stress (i,e., u'w') was about 408 times greater than average Reynolds stress (u',w') in the mid-layer and 270 times greater in the uppcrlayer of the turbulent boundary layer. These values are far greater than presently known maximum value, namely 30 times greater than the average Reynolds stress reported by Gordon (1974) and Heathersaw (1974). The distribution of Reynolds stress were extremely non-normal with the mean peak occurrence period of 5 minutes in the mid-layer and 1. 1 minutes in the upper layer of the turbulent boundary layer. Each teak lasted about 2 seconds in the mid-layer and 1.1 seconds in the upper layer of the turbulent boundary layer. Our dimensionless period of peak occurrence are found to be 33.3 in the mid-layer and 7.3 in the upper-layer, which are substantially larger than the often quoted values of 3.2-6.8 for the bursting period (Jackson, 1976). Some workers have interpreted that the intermittency phenomenon is the retlect of burst across their probe of the currentmeter (Gordon, 1974; Heathersaw, 1974). However, it was known that the burst can be found very near bottom boundary with smoothed bottom (i,e., friction Reynolds number$\leq$3,000) in the laboratory experiments. Through this investigation, it was found that the intermittent strength of the turbulent momentum transports does not conclusively indicate the characteristic feature of the boundary layer turbulence with a rough bottom (i,e., friction Reynolds number$\geq$10$\^$5/).