• 한국진공학회지
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• 제9권2호
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• pp.110-115
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• 2000

열-필라멘트 CVD 장치를 이용하여 다이아몬드 박막의 증착 조건을 최적화시켰다. $B_4C $ 고체 펠렛을 사용하여 보론두핑된 다이아몬드 박막을 제조하여 그 질적 특성을 알아보고, 전류전압 특성과 전계 방출 측정을 통해 박막의 전계방출소자(field emission display (FED)로의 특성을 조사하였다. 보론 도핑의 양이 증가함에 따라 다이아몬드 결정의 평균 입자 크기가 조금씩 감소하지만 다이아몬드의 질은 소량 도핑인 경우에 크게 바뀌지 않았다. Al/Diamond/p-Si 소자의 전류전압 특성을 조사한 결과 도핑된 다이아몬드 박막의 전류는 도핑되지 않은 박막의 전류에 비해 $10^4$~$10^5$배 정도 증가하였다. 전계방출 특성을 조사한 결과 보론-도핑이 증가함에 따라 점차 낮은 전기장에서 전자를 방출하며, 또한 높은 방출 전류를 나타냈다. 전자가 방출되기 시작하는 onset-field는 펠렛의 수가 2개일 때 15.5 V/$\mu\textrm{m}$, 3개일 때 13.6 V/$\mu\textrm{m}$, 4개일 때는 11.1 V/$\mu\textrm{m}$. 체계적으로 감소하였다. 도핑의 강도가 세어짐에 따라 Fowler-Nordheim 그래프의 기울기는 감소하는 경향을 보였으며, 이로서 보론 도핑으로 인해 유효 장벽 에너지가 감소되어 전자 방출 특성이 향상됨을 알 수 있었다.

• 한국재료학회지
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• 제32권4호
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• pp.210-215
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• 2022

Extensive research is being carried out on Ni-rich Li(Ni_xCo_yMn_1-x-y)O₂ (NCM) due to the growing demand for electric vehicles and reduced cost. In particular, Ni-rich Li(Ni_xCo_yMn_1-x-y-zAl_z)O₂ (NCMA) is attracting great attention as a promising candidate for the rapid development of Co-free but electrochemically more stable cathodes. Al, an inactive element in the structure, helps to improve structural stability and is also used as a doping element to improve cycle capability in Ni-rich NCM. In this study, NCMA was successfully synthesized with the desired composition by direct coprecipitation. Boron and tin were also used as dopants to improve the battery performance. Macro- and microstructures in the cathodes were examined by microscopy and X-ray diffraction. While Sn was not successfully doped into NCMA, boron could be doped into NCMA, leading to changes in its physicochemical properties. NCMA doped with boron revealed substantially improved electrochemical properties in terms of capacity retention and rate capability compared to the undoped NCMA.

• ETRI Journal
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• 제35권4호
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• pp.632-637
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• 2013

In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p-pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n-drift layer due to the trenched p-pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.376-376
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• 2012

본 연구는 Poly-Si에 이온 주입된 Boron의 Activation 거동을 연구하고자 SLS (Sequential Lateral Solidification) Poly-Si과 ELA (Excimer Laser Annealing) Poly-Si의 활성화 거동을 비교 분석하였다. SLS 및 ELA 결정화 방법으로 제조된 Poly-Si을 모재로 비 질량 분리 방식의 ISD (Ion Shower Doping) System을 사용하여 2.5~7.0 kV까지 이온주입 하였다. 이온주입 후 두 가지의 열처리 방법, 즉, FA 열처리(Furnace Annealing)와 RTA 열처리(Rapid Thermal Annealing)를 사용하여 도펀트 활성화 열처리를 수행하고 이온주입 조건 및 활성화 열처리 방법에 따른 결함 회복 및 도펀트 활성화 거동의 변화를 관찰하였다. TRIM-code Simulation 결과 가속 이온 에너지와 조사량이 증가 할수록 이온주입 시 발생하는 결함의 양이 증가하는 것을 정량적으로 계산하였다. 실험 결과 결함의 양이 증가 할수록 Activation이 잘되는 것을 관찰할 수 있었다. SLS Poly-Si에 비하여 ELA Poly-Si의 경우 도펀트 활성화 열처리 후 활성화 효율이 높게 나타났다. 본 결과는 Grain Boundary의 역할과 밀접한 관계가 있으며 간단한 정성적인 Model을 제시하였다. 활성화 효율의 경우 RTA 열처리 시편이 FA 시편에 비하여 높은 것이 관찰되었다. 본 결과는 열처리 온도 및 시간에 따라 변화하는 Boron의 특이한 활성화 거동인 Reverse Annealing 효과에 기인하는 것으로 규명되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.180.2-180.2
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• 2014

Opening a bandgap by forming graphene nanoribbons (GNRs) and tailoring their properties via doping is a promising direction to achieve graphene-based advanced electronic devices. Applying a first-principles computational approach combining density functional theory (DFT) and DFT-based non-equilibrium Green's function (NEGF) calculation, we herein study the structural, electronic, and charge transport properties of boron-nitrogen binary edge doped GNRs and show that it can achieve novel doping effects that are absent for the single B or N doping. For the armchair GNRs, we find that the B-N edge co-doping almost perfectly recovers the conductance of pristine GNRs. For the zigzag GNRs, it is found to support spatially and energetically spin-polarized currents in the absence of magnetic electrodes or external gate fields: The spin-up (spin-down) currents along the B-N undoped edge and in the valence (conduction) band edge region. This may lead to a novel scheme of graphene band engineering and benefit the design of graphene-based spintronic devices.

• 한국자기공명학회논문지
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• 제3권2호
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• pp.90-99
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• 1999

Doping of boron atoms in graphite has been well known method to increase the discharge capacity as the negative electrode material for lithium secondary battery. Herein, the boron-doped graphites are prepared by mixing 1, 2.5, 5, and 7 wt. % of boron carbide in carbon during the graphitizing process. The structural states of boron in boron-doped graphites are investigated by solid-state 11B NMR spectroscopy. The resonance lines for substitutional boron atoms are identified as the second order quadrupolar powder pattern with the quardrupole coupling constant, QCC = 3.36(2) MHz. The quantitative analysis of 11B NMR spectra with boron-doped graphite has also been performed via simulation.

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.665-669
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• 2015

We investigated and compared two methods of in-situ oxidation and chemical etching treatment (CET) to remove the boron rich layer (BRL). The BRL is generally formed during boron doping process. It has to be controlled in order not to degrade carrier lifetime and reduce electrical properties. A boron emitter is formed using $BBr_3$ liquid source at $930^{\circ}C$. After that, in-situ oxidation was followed by injecting oxygen of 1,000 sccm into the furnace during ramp down step and compared with CET using a mixture of acid solution for a short time. Then, we analyzed passivation effect by depositing $Al_2O_3$. The results gave a carrier lifetime of $110.9{\mu}s$, an open-circuit voltage ($V_{oc}$) of 635 mV at in-situ oxidation and a carrier lifetime of $188.5{\mu}s$, an $V_{oc}$ of 650 mV at CET. As a result, CET shows better properties than in-situ oxidation because of removing BRL uniformly.

• 전자공학회논문지A
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• 제32A권8호
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• pp.94-106
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• 1995

A three-dimensional(3D) Monte Carlo simulator for boron ion implantation into <100>single-crystal silicon considering the mask structure has been developed to predict the mask-dependent impurity doping profiles of the implanted boron at low energies into the reduced area according to the trend of a reduction in the size of semiconductor devices. All relevant important parameters during ion implantation have been taken into account in this simulator. These are incident energy, tilt and rotation of wafer, orientation of silicon wafer, presence of native silicon dioxide layer, dose, wafer temperature, ion beam divergence, masking thickness, and size and structure of open window in the mask. The one-dimensional(1D) results obtained by using the 3D simulator have been compared with the SIMS experiments to demonstrate its capabilities and confirem its reliability, and we obtained relatively accurate 1D doping profiles. Through these 3D simulations considering the hole structure and its size, we found the mask effects during boron ion implantation process.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.56-59
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• 2000

In this paper, we have made a comparison between secondary ion mass spectroscopy(SIMS) data by the 5kcV-15keV boron implantation and computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 30s at 1000$^{\circ}C$ Two dimensional doping concentration distribution from different mask dimensions under inert gas annealing, dry-, and wet-oxidation condition were calculated and simulated with microtec simulator.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.232-232
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• 2012

The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in $SiO_2$ matrix. Secondary ion mass spectrometry (SIMS) is a powerful technique for the in-depth analysis of solid materials and the impurities analysis of boron and phosphorus in semiconductor materials. For the study of diffusion behaviour of B and P by SIMS, Si/$SiO_2$ multilayer films doped by B or P were fabricated and annealed at high temperatures for the activated doping of B and P. The distributions of doping elements were analyzed by SIMS. Boron found to be preferentially distributed in Si layer rather than the $SiO_2$ layer. Especially the B in the Si layers was separated to two components of an interfacial component and a central one. The central component was understood as the activated elements. On the other hand, phosphorus did not show any preferred diffusion.