• 접착 및 계면
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• 제7권4호
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• pp.28-31
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• 2006

Due to the miniaturization of MEMS and microelectronics the joining techniques also have to be adjusted. The dosing technology with viscous adhesives does not permit reproducible adhesive volumes, which are clearly under a nano-liter. A nano-liter means however a diameter of bonding area within the range of several 100 micrometers. Additional, viscous adhesives need a certain time, until they are cross linked or cured. The problem especially in the MEMS is the initial strength, since it gives the time, which is needed for joining an individual adhesive joint. The time up to the initial strength is with viscous, also with fast curing systems, within the range of seconds until minutes. Until the reach of the initial strength, the micro part must be fixed/held. Without sufficient adjustment/clamping it can come to a shift of the micro parts. Also existing micro adhesive bonding processes are not batch able, i.e. the individual adhesive joints of a micro system must be processed successively. In the context of the WCARP III 2006 now an innovative method is to be presented, how it is possible to solve the existing problems with micro bonding. i.e. a method is presented, which is batch able, possess a minimum joining geometry with some micrometers and is so fast that no problems with the initial strength arise. It is a method, which could revolutionize the sticking technology in the micro system engineering.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.803-808
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• 2002

A computer-aided alloy-designing technique to develop the insert metal for transient liquid phase (TLP) bonding was applied to high aluminum Ni-base superalloys. The main procedure of a mathematical programming method was to obtain the optimal chemical composition through rationally compromising the plural objective performances of insert metal by a grid-search which involved data estimation from the limited experimental data using interpolation method. The objective function Z which was introduced as an index of bonding performance of insert metal involved the melting point, hardness (strength), formability of brittle phases and void ratio (bonding defects) in bond layer as the evaluating factors. The contour maps of objective function Z were also obtained applying the interpolation method. The compositions of Ni-3.0%Cr-4.0%B-0.5%Ce (for ${\gamma}$/${\gamma}$/${\beta}$ type alloy) and Ni3.5%Cr-3.5%B-3%Ti (for ${\gamma}$/${\gamma}$ type alloy) which optimized the objective function were determined as insert metal. SEM observations revealed that the microstructure in bond layers using the newly developed insert metals indicated quite sound morphologies without forming microconstituents and voids. The creep rupture properties of both joints were much improved compared to a commercial insert metal of MBF-80 (Ni-15.5%Cr-3.7%B), and were fairly comparable to those of base metals.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.30-32
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• 2005

This paper reports on an LTCC-based packaging method using Au/Sn eutectic bonding process for RF MEMS applications. The proposed packaging structure was realized by a micromachining technology. An LTCC substrate consists of metal filled vertical via feedthroughs for electrical interconnection and Au/Sn sealing rim for eutectic bonding. The LTCC capping substrate and the glass bottom substrate were aligned and bonded together by a flip-chip bonding technology. From now on, shear strength and He leak rate will be measured then the fabricated package will be compared with the LTCC package using BCB adhesive bonding method which has been researched in our previous work.

• 한국재료학회지
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• 제12권10호
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• pp.820-824
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• 2002

It is of importance to know that the bonding strength and interfacial stress of SOI wafer pairs to meet with mechanical and thermal stresses during process. We fabricated Si/2000$\AA$-SiO$_2$ ∥ 2000$\AA$-SiO$_2$/Si SOI wafer pairs with electric furnace annealing, rapid thermal annealing (RTA), and fast linear annealing (FLA), respectively, by varying the annealing temperatures at a given annealing process. Bonding strength and interfacial stress were measured by a razor blade crack opening method and a laser curvature characterization method, respectively. All the annealing process induced the tensile thermal stresses. Electrical furnace annealing achieved the maximum bonding strength at $1000^{\circ}C$-2 hr anneal, while it produced constant thermal tensile stress by $1000^{\circ}C$. RTA showed very small bonding strength due to premating failure during annealing. FLA showed enough bonding strength at $500^{\circ}C$, however large thermal tensile stress were induced. We confirmed that premated wafer pairs should have appropriate compressive interfacial stress to compensate the thermal tensile stress during a given annealing process.

• 소성∙가공
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• 제7권1호
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• pp.66-71
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• 1998

The present study is concerned with the hydrostatic extrusion process of copper-clad aluminium bar to investigate the bonding conditions as well as the basic flow characteristics. Considering the bonding mechanism of bi-metal contact surface as cold pressure welding the normal pressure and the contact surface expansion are selected as process parameters governing the bonding conditions, in this study the critical normal pressure required for the local extrusion-the protrusion of virgin surfaces by the surface expansion at the interface-is obtained using a slip line method and is then used as a criteron for the bonding. A rigid plastic finite element method is used to analyze the steady state extrusion process. The interface profile of bi-metal rod is predicted by tracking the paths of two particles adja-process. The interface profile of bi-metal rod is predicted by tracking the paths of two particles adja-cent to interface surface. The contact surface area ration and the normal pressure along the interface are calculated and compared to the critical normal pressure to check bonding. It is found that the model predictions are generally in good agreement with the experimental observations. The compar-isons of the extrusion pressure and interface profile by the finite element with those by experi-ments are also given.

• 한국소음진동공학회논문집
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• 제23권1호
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• pp.84-91
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• 2013

Ultrasonic flip-chip bonding needs a precise bonding tool which delivers ultrasonic energy into chip bumps effectively to use the selected resonance mode and frequency of the horn structure. The bonding tool is excited at the resonance frequency and the input and output ports should locate at the anti-nodal points of the resonance mode. In this study, we propose new design method with topology optimization for ultrasonic bonding tools. The SIMP(solid isotropic material with penalization) method is used to formulate topology optimization and OC(optimal criteria) algorithm is adopted for the update scheme. MAC(modal assurance criterion) tracking is used for the target frequency and mode. We fabricate two prototypes of ultrasonic tools which are based on 3D optimization models after reviewing 2D and 3D topology optimization results. The prototypes are satisfied with the ultrasonic frequency and vibration amplitude as the ultrasonic bonding tools.

• Bulletin of the Korean Chemical Society
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• 제27권12호
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• pp.2045-2050
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• 2006

The interstitial hydrogen bonding in NiTi solid and its effect on the metal-to-metal bond is investigated by means of the EH tight-binding method. Electronic structures of octahedral clusters $Ti_4Ni_2$ with and without hydrogen in their centers are also calculated using the cluster model. The metal d states that interact with H 1s are mainly metal-metal bonding. The metal-metal bond strength is diminished as the new metal-hydrogen bond is formed. The causes of this bond weakening are analyzed in detail.

• 대한치과의사협회지
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• 제37권7호통권362호
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• pp.530-535
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• 1999

Detailed finishing of the occlusion is a clinical skill that has become difficult with the development of fixed appliances. Accuracy of bracket placement definitely improves with indirect technique, Several methods for the placement of orthodontic brackets on dental casts are currently used in the indirect bonding technique. These include attachment by means of bonding resins, adhesive tapes or sticky wax. This article presents the indirect procedures of our clinic, which use paste-paste chemically cured composites. Detailed laboratory and clinical procedure for dual tray method and other application of indirect bonding will be presented.

• 대한기계학회논문집A
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• 제25권1호
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• pp.11-15
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• 2001

We present the design and strength evaluation of an anodically bonded pressurized cavity array, based on the energy release rate measured from the anodically bonded plates of two dissimilar materials. From a theoretical analysis, a simple fracture mechanics model of the pressurized cavity array has been developed. The energy release rate (ERR) of the bonded cavity with an infinite bonding length has been derived in terms of cavity pressure, cavity size, bonding length, plate size and material properties. The ERR with a finite bonding length has been evaluated from the finite element analysis performed for varying cavity and plate sizes. It is found that, for an inter-cavity bonding length greater than the half of the cavity length, the bonding strength of cavity array approaches to that of the infinite plate. For a shorter bonding length, however, the bonding strength of the cavity array is monotonically decreased with the ratio of the bonding length to the cavity length. The critical ERR of 6.21J/㎡ has been measured from anodically bonded silicon-glass plates. A set of critical pressure curves has been generated for varying cavity array sizes, and a design method of the pressurized cavity array has been developed for the failure-free wafer-level packaging of MEMS devices.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.