• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.47-51
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• 2000

A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1005-1008
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• 2003

We report a new FCOG (flip chip on glass) technique using solder bumps for display packaging applications. The In and Sn solder bumps of 40 ${\mu}m$ pitches were formed on Si and glass substrate. The In and Sn bumps were bonded at 125 at the pressure of 3 mN/bump. The metallurgical bonding was confirmed using cross-sectional SEM. The contact resistance of the solder joint was 65 $m{\Omega}$ which was much lower than that of the joint made using the conventional ACF bonding technique. We demonstrate that the new COG technique using solder bump to bump direct bonding can be applied to advanced LCDs that lead to require higher quality, better resolution, and lower power consumption.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.3
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• pp.92-98
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• 2020

In this study, an injection mold with conformal cooling channels was designed and manufactured for use in the production of a thick plastic cosmetic container that required high gloss surfaces. A cooling analysis verified the design of the conformal cooling channel for the cosmetic container, and also showed that the cooling efficiency was superior to that of the straight cooling channel. Slide cores designed with the conformal cooling channel were manufactured using the Layers Parting method and vacuum diffusion bonding. Subsequent test injection and quality inspection showed no problem in the appearance and dimensional accuracy of the produced product. The cycle time for product production was about 110 seconds, sufficient for mass production.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.33 no.2
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• pp.39-47
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• 2010

Bonding glasses is one of the important PDP (Plasma Panel Display) manufacturing processes. Bonding process includes aligning front and rear glasses with fixing clips. In this process, clips have to maintain perfect alignment between the front and rear glasses. The panel which is fixed by clips goes to next process called sealing. The sealing process is performed in high temperature ($465^{\circ}C$). During sealing process, alignment is very important because it can affect seriously on the PDP screen quality. This study suggests redesigned clips to improve PDP panel alignment and also shows stabilization of clips in a high temperature during sealing process.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.10
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• pp.4034-4053
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• 2015

In order to meet various requirements for transmission quality of both primary users (PUs) and secondary users (SUs) in cognitive radio networks, we introduce a channel bonding mechanism for PUs and a channel reservation mechanism for SUs, then we propose a novel spectrum allocation strategy. Taking into account the mistake detection and false alarm due to imperfect channel sensing, we establish a three-dimensional Markov chain to model the stochastic process of the proposed strategy. Using the method of matrix geometric solution, we derive the performance measures in terms of interference rate of PU packets, average delay and throughput of SU packets. Moreover, we investigate the influence of the number of the reserved (resp. licensed) channels on the system performance with numerical experiments. Finally, to optimize the proposed strategy socially, we provide a charging policy for SU packets.

• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.353-359
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• 1988

In this paper, the design and implementation of a multi-processor based die bonder machine for the semiconductor will be described. This is a final research results carried out for two years from June, 1986 to July, 1988. The mechanical system consists of three subsystems such as bonding head module, wafer feeding module, and lead frame feeding module. The overall control system consists of the following three subsystems each of which employs a 16 bit microprocessor MC 68000 : (i) supervisory control system, (ii) visual recognition / inspection system and (iii) the display system. Specifically, the supervisory control system supervises the whole sequence of die bonder machine, performs a self-diagnostics while it controls the bonding head module according to the prespecified bonding cycle. The vision system recognizes the die to inspect the die quality and deviation / orientation of a die with respect to a reference position, while it controls the wafer feeding module. Finally, the display system performs a character display, image display ans various error messages to communicate with operator. Lead frame feeding module is controlled by this subsystem. It is reported that the proposed control system were applied to an engineering sample and tested in real-time, and the results are sucessful as an engineering sample phase.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.1-8
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• 2022

High-density packaging technologies, including Through-Si-Via (TSV) technologies, are considered important in many fields such as IoT (internet of things), 6G/5G (generation) communication, and high-performance computing (HPC). Achieving high integration in two dimensional packaging has confronted with physical limitations, and hence various studies have been performed for the three-dimensional (3D) packaging technologies. In this review, we described about the causes and effects of scallop formation in TSV, the scallop-free etching technique for creating smooth sidewalls, Cu pillar and Cu-SiO₂ hybrid bonding in TSV. These technologies are expected to have effects on the formation of high-quality TSVs and the development of 3D packaging technologies.

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.573-579
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• 2009

Titanium/aluminum/stainless steel(Ti/Al/STS) clad materials have received much attention due to their high specific strength and corrosion-resisting properties. However, it is difficult to fabricate these materials, because titanium oxide is easily formed on the titanium surface during heat treatment. The aim of the present study is to derive optimized cladding conditions and thereupon obtain the stable quality of Ti/Al/STS clad materials. Ti sheets were prepared with and without pre-heat treatment and Ti/Al/STS clad materials were then fabricated by cold rolling and a post-heat treatment process. Microstructure of the Ti/Al and STS/Al interfaces was observed using a Scanning Electron Microscope(SEM) and an Energy Dispersed X-ray Analyser(EDX) in order to investigate the effects of Ti pre-heat treatment on the bond properties of Ti/Al/STS clad materials. Diffusion bonding was observed at both the Ti/Al and STS/Al interfaces. The bonding force of the clad material with non-heat treated Ti was higher than that with pre-heat treated Ti before the cladding process. The bonding force decreased rapidly beyond $400^{\circ}C$, because the formed Ti oxide inhibited the joining process between Ti and Al. Bonding forces of STS/Al were lower than those of Ti/Al, because brittle $Fe_3Al$, $Al_3Fe$ intermetallic compounds were formed at the interface of STS/Al during the cladding process. In addition, delamination of the clad material with pre-heat treated Ti was observed at the Ti/Al interface after a cupping test.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.331-338
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• 2005

The rapid advances in high power light sources and arrays as encountered in incandescent lamps have induced dramatic increases in die heat flux and power consumption at all levels of high power LED packaging. The lifetime of such devices and device arrays is determined by their temperature and thermal transients controlled by the powering and cooling, because they are usually operated under rough environmental conditions. The reliability of packaged electronics strongly depends on the die attach quality, because any void or a small delamination may cause instant temperature increase in the die, leading sooner or later to failure in the operation. Die attach materials have a key role in the thermal management of high power LED packages by providing the low thermal resistance between the heat generating LED chips and the heat dissipating heat slug. In this paper, thermal transient characteristics of die attach in high power LED package have been studied based on the thermal transient analysis using the evaluation of the structure function of the heat flow path. With high power LED packages fabricated by die attach materials such as Ag paste, solder paste and Au/Sn eutectic bonding, we have demonstrated characteristics such as cross-section analysis, shear test and visual inspection after shear test of die attach and how to detect die attach failures and to measure thermal resistance values of die attach in high power LED package. From the structure function oi the thermal transient characteristics, we could know the result that die attach quality of Au/Sn eutectic bonding presented the thermal resistance of about 3.5K/W. It was much better than those of Ag paste and solder paste presented the thermal resistance of about 11.5${\~}$14.2K/W and 4.4${\~}$4.6K/W, respectively.

• Journal of the Korean Wood Science and Technology
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• v.37 no.1
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• pp.87-93
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• 2009

Properties and chemical bonding of wood charcoal were investigated to understand the chemistry occurring in wood carbonization. From the pH changes of wood charcoal, it is revealed that it becomes acidic to weakly basic for charcoal carbonized at about $300^{\circ}C$, whereas it turns to basic at higher carbonization temperature higher than $600^{\circ}C$. Also, the ratio of carbon atoms in the charcoal was increased with increasing the carbonization temperature, while those of oxygen and hydrogen atoms. This tendency was significant when the carbonization temperature was increased up to $600^{\circ}C$ and the ratio changes of the atoms became stable at above $600^{\circ}C$. In the changes of chemical bonding, the ratio of C-C bonding was increased and those of C-O-H and C-O-R bonding was decreased significantly. It is considered that bondings connected to oxygen atoms tends to be broken, and the ratio of C-C bonding increased. Consequently, it is expected that this change may causes occurrence of new functional groups. In addition to that, it seems to be that the chemical bondings undergo the partial decomposition, formation, and recombination steps, Because ratio of C=O bonding tended to be increased or decreased by increasing the carbonization temperature. This understanding of chemical bond changes in charcoal can be a compensative consideration on the knowledges made only by physical parameters in the properties of micro-pore which has limited to explain the phenomenon. Also, it is considered that this can be treated as a basic knowledge for upgrading and development of use of wood charcoal.