• 마이크로전자및패키징학회지
• /
• 제20권2호
• /
• pp.17-22
• /
• 2013

본 연구에서는 Sn-58Bi 솔더를 이용한 경성 인쇄 회로 기판 (Rigid printed circuit board, RPCB)과 연성 인쇄회로 기판 (Flexible printed circuit board, FPCB) 간의 열압착 접합 시, 접합 조건에 따른 기계적 특성에 대하여 연구하였다. 접합 온도와 접합 시간을 변수로 열압착 접합을 실시하여 $90^{\circ}$ 필 테스트(Peel test)를 통해 접합 강도를 측정하고, 단면과 파단면을 관찰하였다. 접합 온도가 증가할수록 접합 강도가 증가하였으며, 접합 시간에 따른 접합 강도의 변화 또한 관찰할 수 있었다. 접합 시간이 증가하면서 접합부의 파괴에 영향을 미치는 요인이 솔더 층에서 금속간 화합물(Intermetallic compound, IMC) 층으로 변화하는 것을 관찰할 수 있었다. 필 테스트 과정의 F-x(Force-distance) curve를 통해 파괴 에너지를 계산하여 금속간 화합물이 접합 강도에 미치는 영향을 평가하였으며, 본 연구에서 $195^{\circ}C$, 7초 조건이 접합 강도와 파괴 에너지가 가장 높게 나타나는 최적 접합 조건으로 도출되었다.

• 대한금속재료학회지
• /
• 제47권4호
• /
• pp.242-247
• /
• 2009

On the Transient Liquid Phase Bonding (TLPB) phenomenon with the MBF-50 insert metal at narrow gap (under 100), it takes long time for the bonding and the homogenizing. Typically, isothermal solidification is controlled by the diffusion of depressed element of B and Si. However, the amount of B and Si in the MBF-50 filler metal is large. This is reason of the long bonding time. Also, the MBF-50 filler metal did not contained Al and Ti which are ${\gamma}^{\prime}$ phases former. This is reason of the long homogenizing time. From the bonding phenomenon with the MBF-50 insert metal, we search main factors on the bonding mechanism and select several insert-metals for using the wide-gap TLPB. New insert-metals contained Al and Ti which are ${\gamma}^{\prime}$ phases former and decrease the B then the MBF-50. When the new insert-metal was used on the TLPB, the bonding time was decreased about 1/10 times and homogenizing heat treatment was no needed. In spite of the without homogenizing, the volume fraction of ${\gamma}^{\prime}$ phases in the boned interlayer was equal to homogenizing heat treated specimen which was TLPB with the MBF-50. Finally, the new insert metal named WG1 for the wide-gap TLPB is more efficient then the MBF-50 filler metal without decreasing the bonding characteristic.

• 한국전기전자재료학회논문지
• /
• 제21권6호
• /
• pp.544-551
• /
• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• Bulletin of the Korean Chemical Society
• /
• 제34권3호
• /
• pp.768-772
• /
• 2013

Layered mixed metal hydroxy double salts (HDS) with the formulas $(Cu_{0.75}Ni_{0.25})_2(OH)_3NO_3$ ((Cu, Ni)-HDS) and $Cu_2(OH)_3NO_3$ ((Cu, Cu)-HDS) were prepared via slow hydrolysis reactions of CuO with $Ni(NO_3)_2$ and $Cu(NO_3)_2$, respectively. The crystal structures, morphologies, bonding natures, and magnetic properties of (Cu, Ni)-HDS and (Cu, Cu)-HDS were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformation infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), and a superconducting quantum interference device (SQUID). Even though (Cu, Ni)-HDS has a similar layered structure to that of (Cu, Cu)-HDS, the bonding nature of (Cu, Ni)-HDS is slightly different from that of (Cu, Cu)-HDS. Therefore, the magnetic properties of (Cu, Ni)-HDS are significantly different from those of (Cu, Cu)-HDS. The origin of the abnormal magnetic properties of (Cu, Ni)-HDS can be explained in terms of the bonding natures of the interlayer and intralayer structures.

• 한국전기전자재료학회논문지
• /
• 제22권1호
• /
• pp.47-52
• /
• 2009

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2004년도 춘계 학술발표대회 개요집
• /
• pp.42-44
• /
• 2004

산업용 가스터빈의 버켓용 Ni기 초내열합금 GTD-111의 수리기술로서 천이액상확산접합법(Transcient Liquid Diffusion Bonding Process, 이하 TLP접차법)이 각광받고 있다. 그러나 이 방법은 등온응고 완료까지 장시간이 소요되므로 접합시간을 단축할 수 있는 공정 개발이 필요하다. (중략)

• 반도체디스플레이기술학회지
• /
• 제7권1호
• /
• pp.41-45
• /
• 2008

We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-$CH_x$, bonding group and Si-$CH_x$, bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$, combined bonds. The SiOCH films revealed ultra low dielectric constant around 2.1(1) and reduced further below 2.0 by heat treatments.

• Nano
• /
• 제13권12호
• /
• pp.1850138.1-1850138.6
• /
• 2018

Two-dimensional (2D) or layered materials have a great potential for applications in energy storage, catalysis, optoelectronics and gas separation. Fabricating novel 2D or quasi-2D layered materials composed of relatively abundant and inexpensive atomic species is an important issue for practical usage in industry. Here, we suggest the layer-structured AlOOH (Boehmite) as a promising candidate for such applications. Boehmite is a well-known layer-structured material and a single-layer can be exfoliated from the bulk boehmite by breaking the interlayer hydrogen bonding. We study atomic and electronic band structures of both bulk and single-layer boehmite, and also obtain the single-layer exfoliation energy using first-principles calculations.

• 한국재료학회지
• /
• 제9권10호
• /
• pp.970-977
• /
• 1999

활성금속브레이징법으로 계면접합된 AlN/Cu 접합체의 잔류응력 완화에 미치는 Mo 중간재의 영향을 조사하였다. 유한요소법에 의한 응력 해석과 접합체 강도 측정, 파단면의 관찰을 행하였으며, 이들 결과를 비교, 분석하였다. 응력 해석 결과로부터, Mo 중간재를 사용할 경우 최대 잔류 주응력이 형성되는 위치가 AlN/삽입금속 계면으로부터 삽임금속/Mo 계면을 통하여 Mo 내부로 이동됨을 확인하였다.접합체의 자유표면에 형성되는 인장성분의 응력집중 위치는 Mo 중간재 두께가 증가됨에 따라 Cu/Mo 계면과 Mo/AlN 계면의 두 곳으로 분리되었으며, AlN측 잔류응력의 크기는 크게 감소하였다. 중간재를 사용하지 않은 경우 최대 접합강도가 52 MPa로 낮은 강도를 보였으나, 두께 400$\mu\textrm{m}$ 이상의 Mo 중간재를 사용한 접합체의 경우, 200 MPa 이상, 최대 275 MPa의 접합강도를 얻을 수 있었다.

• 한국항공우주학회지
• /
• 제30권8호
• /
• pp.65-70
• /
• 2002

본 연구에서는 로켓엔진에 사용되고 있는 2상 스테인리스강의 브레이징 접합성에 관하여 접합 현상과 기계적 강도의 두가지 측면의 고찰을 통하여 검증하였다. UNS32550을 모재로, MBF-50을 인서트금속으로 사용하여 브레이징 접합온도를 1473K, 1498K로 변화시키고, 접합 시간은 0~1.8ks로 변화시키면서 각 조건에서의 접합현상을 고찰한 결과, 접합부에서는 모재와 인서트금속간의 반응으로 인해 다양한 상이 생성되었다. 접합 초기에는 접합계면 및 접합부 근방의 모재에서 BN가 생성되고, 접합계면에서는 Cr질화물이 생성되어 접합 시간이 증가함에 따라 BN과 Cr질화물의 양이 감소하였다. 전단시험 결과 500MPa의 우수한 전단강도를 얻었다.