Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)
- Volume 7 Issue 1
- /
- Pages.41-45
- /
- 2008
- /
- 1738-2270(pISSN)
Electrical characteristics of low-k SiOCH thin film deposited by BTMSM/$O_2$ high flow rates
BTMSM/$O_2$ 고유량으로 증착된 low-k SiOCH 박막의 전기적인 특성
-
Kim, Min-Seok
(Electronic Engineering of Cheongju University) ;
- Hwang, Chang-Su (Physics of Korea Air Force Academy) ;
- Kim, Hong-Bae (School of Electronic and Information Engineering, Cheongju University)
- Published : 2008.03.31
Abstract
We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-