• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.512-513
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• 2005

We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene(C60) as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was 2.65% at illumination intensity $100mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• Journal of Soil and Groundwater Environment
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• v.24 no.1
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• pp.35-42
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• 2019

In installation of groundwater wells, grouting materials are injected between the groundwater borehole and the inner casing in order to prevent infiltration of contaminated groundwater from the top soil layers into wells. The injection device of grouting materials is commonly composed of an inlet head device with an expansion packer, a cylinder capable of storing the grouting materials, and an air cylinder. In this work, two types of common grouting materials, silicon and cement materials, were tested for their performances as grouting media. For silicon. silicon was mixed with clay or calcite, and tested for their tensile strength and underwater reactivity. Both silicon-clay and silicon-calcite mixtures had adequate flow and adhesiveness. For cement material, general cement, ultra-rapid harding cement, and natural cement were respectively mixed with three different soil types including coarse-grained granite, fine-grained granite, and gneiss, and direct shearing tests were conducted after hardening. Under grouting depth condition of 30 m, the minimum adhesive strength was greater for weathered gneiss than non-weathered gneiss with its maximum values obtained from the mixtures of ultra rapid-harding cement.

• Journal of the Korean Institute of Landscape Architecture
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• v.29 no.1
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• pp.131-139
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• 2001

This paper aims at surveying through case studies the planting possibility on the interval artificial ground between the bank and the core landfill of the first section of works in the SUDOKWON Landfill area landfill area which was completed, followed by the layer-on-layer landfill process involving the latch or sealing layer against emitting landfill gas from the reclaimed waste. The survey results are as follows; 1. The layers of the artificial planting ground on the landfill were established on the basis of top-on-top procedure for a waste layer, a topping soil layer (T=50cm), a gas blocking layer (broken stones T=30cm), a filter layer (non-woven fabric 700g), a sheet protecting soil layer (T=20cm), and a blocking layer (HDPE SHEET 2.0mm), an irrigation layer (SAND T=30cm), a filter layer (non-woven fabric 700g), a sheet protecting soil layer (T=20cm), and a blocking layer (HDPE SHEET 2.0mm), an irrigation layer (SAND T=30cm), a filter layer (non-woven fabric 700g), a planting layer (T=90cm+), a top mound (T=2m). 2. Since no direct damage on the planting layer affected by the landfill gas was detected, planting is found to be still possible and successful except the severely unequal subsidence portion. 3. The mortality rate is discovered different on different trees: Pinus thunbergii (H3.0$\times$W1.0m) 11.25%, Pinus thunbergii (H2.5$\times$W0.8m) 4.73%, Koelreuteira paniculata 8.67%, Hibiscus syriacus 5.68%, Deutzia parviflora 6.50%, Forsythia koreana 8.17%, Rho. yedoense v. poukhanese 32.22%, and Spiraea pru v. symplicifolia 18.89%; although the last two of which are generally considered to have a strong generic growing character, they are subject to be weakened when exposed to the contaminated microclimate of the site like landfill gas. 4. The damage rates, on Pinus thunbergii, Koelreuteria paniculata, Hibiscus syracus, Forsythia koreana, Deutzia parviflora, Rho. yedoense v. poukhanense were shown to decrease to 7.31-17.69% in the second check (June 2000) lower than 5.77-46.92% in the first examination (June 1999), whereas the damage on Spiraea pru v. symplicifolia relatively increased. It is believed that preparatory method of the air pollution, change of temperature, odor by emitting landfill gas, and minute dust from vehicles should be made, and a research on this matter will be conducted in the near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of the Korea Society of Computer and Information
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• v.18 no.8
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• pp.95-104
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• 2013

DDoS attacks have became as a social threat since 2009 7.7 DDoS turmoil. Even though defence techniques have been developing to provide against those threats, they become much more sophisticate. In recent years, the attack form of DDoS is changing from high amount of traffic attack of network layers to highly sophisticate small amount of application layers. To make matters worse, attack agent for the attack has became very intelligent so that it is difficult to be blocked since it can't be distinguished from normal PCs. In the user authentication system(such as CAPTCHA) User intervention is required to distinguish normal PCs and intelligent attack agents and in particular, in a NAT environment, IP-based blocking method can be cut off the normal users traffic at the same time. This research examined defense techniques which are able to distinguish between agent and normal PC and effectively block ways the HTTP DDoS offense applying one-time session key based authentication method using Cookie which is used in HTTP protocol to protect web sever from sophisticate application layer of DDoS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.711-714
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• 2015

In this paper, high quality AlN layers were regrown on AlN nanopillar structure with $SiO_2$-dots by HVPE. Surface morphology of AlN layer regrown exhibited flatter than a conventional AlN template. The laterally overgrown AlN regions would consist of a continuous well coalesced layer with lower dislocation density than in the template because of the dislocation blocking and dislocation bending effects. Moreover, result of Raman spectroscopy suggest that the AlN nanopillar structure with $SiO_2$-dots relieves the strain in the AlN layer regrown by HVPE.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.09a
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• pp.29-39
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• 2010

By understanding the construction process of sea dikes and the current state of the thickness and speed of fluid in the bottom layer protection work of final closure gaps, a construction method applicable for the blocking of bottom layer work will be selected. The three construction methods selected will be tested in site through various methods, and the reinforcement of bottom layer protection and impervious effect will be verified. The verification results are as follows: 1) The overall riprap layer were 0.5~1.0m thicker than planned so that the grouting depth and grout input amount increased 2) The applied construction methods permeability of riprap layers were improved from $\alpha{\times}10^{-2}cm/s$ before the construction to $\alpha{\times}10^{-4}cm/s$ after construction. 3) The results of core extraction in order to grossly verify the hardening time and durability allowed the identification of grout injection effect. The amount of filling of the injection was difficult to judge because the slime in many areas made the reading of borehole photography difficult.

• Journal of the Korean Applied Science and Technology
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• v.17 no.3
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• pp.174-177
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• 2000

The effect of a-sexithiophene(${\alpha}-6T$) layers on the light emitting diode (LED) were studied. The ${\alpha}-6T$ was used for a buffer layer in electroluminescent (EL) devices. Enhanced carrier (hole) injection and improved emission efficiency were observed. Carrier injection characteristics were investigated as a function of ${\alpha}-6T$ later thickness. The efficiency of the electroluminescence was proportional to the thickness of ${\alpha}-6T$ layer. The highest efficiency was observed 600A of ${\alpha}-6T$ later, which was about 1.5 times higher than that of device without ${\alpha}-6T$ later. The device with a-6T showed an operation voltage lowered by 2V. The ${\alpha}-6T$ layer can substitute hole blocking layer, and control charge injection properties.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1437-1439
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• 2007

We fabricated white organic light emitting device (WOLED) with the layered fluorescent blue material and phosphorescent green/red dye-doped materials. Addition of the non-doped phosphorescent host material between the fluorescent and phosphorescent light emitting layers provided the result of broadband white spectrum, with improved balance, higher efficiency, and lower power consumption. In our devices, there was no need of exciton-blocking layer between the each emission layer for the further confinement of the diffusion of excitons.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.53-56
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• 2002

The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.