• 한국산학기술학회논문지
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• 제13권1호
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• pp.329-332
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• 2012

LED는 저 전력, 긴 수명, 고 휘도, 빠른 응답, 친환경적인 특성의 여러 장점을 갖고 있기 때문에 청색과 녹색 LED는 교통신호, 옥외 디스플레이, 백색 LED는 LCD 후면광 등의 응용 제품에 사용되고 있다. 여기서 LED의 성능을 향상하기 위하여 출력전력과 소자의 신뢰성을 높이고, 동작전압을 낮추어야 LED 칩의 고효율화가 이루어져야 하는데, 이는 에피택셜층, 표면요철, 패턴이 있는 사파이어 기판, 칩 설계의 최적화, 특수 공정의 개선 등의 기술이 우수해야 한다. 본 연구에서는 측면 에칭 기술과 절연층 삽입기술을 이용하여 사파이어 에피 웨이퍼 위에 GaN-기반 백색 LED 칩을 제작하여 그 성능을 조사하였다. LED 칩의 성능을 개선하기 위한 최적화 설계와 CBL(current blocking layer) 삽입 기술의 개선된 공정을 통하여 LED 칩 성능의 향상을 확인할 수 있었으며, 출력 전력은 광 출력 7cd, 순방향 인가전압 3.2V의 값을 얻었다. 현재의 LCD 후면광원으로 사용되고 있는 LED 칩의 출력에 비하여 성능이 개선되었으며, 의료기기 및 LCD LED TV의 후면광원으로 사용할 수 있을 것으로 기대된다.

• The Korean Journal of Physiology and Pharmacology
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• 제22권5호
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• pp.585-595
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• 2018

Amitriptyline, a tricyclic antidepressant, is commonly used to treat depression and neuropathic pain, but its mechanism is still unclear. We tested the effect of amitriptyline on 5-hydroxytryptamine 3 ($5-HT_3$) receptor currents and studied its blocking mechanism because the clinical applications of amitriptyline overlapped with $5-HT_3$ receptor therapeutic potentials. Using a whole-cell voltage clamp method, we recorded the currents of the $5-HT_3$ receptor when 5-HT was applied alone or co-applied with amitriptyline in cultured NCB-20 neuroblastoma cells known to express $5-HT_3$ receptors. To elucidate the mechanism of amitriptyline, we simulated the $5-HT_3$ receptor currents using Berkeley $Madonna^{(R)}$ software and calculated the rate constants of the agonist binding and receptor transition steps. The $5-HT_3$ receptor currents were inhibited by amitriptyline in a concentration-dependent, voltage-independent manner, and a competitive mode. Amitriptyline accelerated the desensitization of the $5-HT_3$ receptor. When amitriptyline was applied before 5-HT treatment, the currents rose slowly until the end of 5-HT treatment. When amitriptyline was co-applied with 5-HT, currents rose and decayed rapidly. Peak current amplitudes were decreased in both applications. All macroscopic currents recorded in whole cell voltage clamping experiments were reproduced by simulation and the changes of rate constants by amitriptyline were correlated with macroscopic current recording data. These results suggest that amitriptyline blocks the $5-HT_3$ receptor by close and open state blocking mechanisms, in a competitive manner. We could expand an understanding of pharmacological mechanisms of amitriptyline related to the modulation of a $5-HT_3$ receptor, a potential target of neurologic and psychiatric diseases through this study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of $25{\mu}m$ and $3700{\mu}m$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of 25$\mu\textrm{m}$ and 3,700$\mu\textrm{m}$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.75.2-75.2
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• 2013

Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

• Biomolecules & Therapeutics
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• 제31권2호
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• pp.168-175
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• 2023

Tramadol is an opioid analog used to treat chronic and acute pain. Intradermal injections of tramadol at hundreds of millimoles have been shown to produce a local anesthetic effect. We used the whole-cell patch-clamp technique in this study to investigate whether tramadol blocks the sodium current in HEK293 cells, which stably express the pain threshold sodium channel Na_v1.7 or the cardiac sodium channel Na_v1.5. The half-maximal inhibitory concentration of tramadol was 0.73 mM for Na_v1.7 and 0.43 mM for Na_v1.5 at a holding potential of -100 mV. The blocking effects of tramadol were completely reversible. Tramadol shifted the steady-state inactivation curves of Na_v1.7 and Na_v1.5 toward hyperpolarization. Tramadol also slowed the recovery rate from the inactivation of Na_v1.7 and Na_v1.5 and induced stronger use-dependent inhibition. Because the mean plasma concentration of tramadol upon oral administration is lower than its mean blocking concentration of sodium channels in this study, it is unlikely that tramadol in plasma will have an analgesic effect by blocking Na_v1.7 or show cardiotoxicity by blocking Na_v1.5. However, tramadol could act as a local anesthetic when used at a concentration of several hundred millimoles by intradermal injection and as an antiarrhythmic when injected intravenously at a similar dose, as does lidocaine.

• 전력전자학회논문지
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• 제6권5호
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• pp.423-431
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• 2001

최근의 유도전동기 구동 시스템은 고속의 ON, OFF동작 특성을 가진 전력 반도체 소자를 가진 인버터와 이를 제어하기 위한 SVPWM(Space Vector PWM)제어이론에 의하여 주로 구성되어 있다. 이러한 PWM 인버터는 정현파 형태의 전압과 전류를 얻기 위해 높은 스위칭 주파수로 동작을 하게 되고, 매 스위칭이 일어나는 순간마다 di/dt 및 dv/dt가 매우 크기 때문에 무시할 수 없는 양의 고주파 누설전류가 고정자 권선과 프레임 사이에 존재하는 기생 커패시터를 통해 접지로 흐르게 된다. 이로 인해 누전보호 계전기의 오동작 및 모터 권선의 절연파괴에 의한 모터의 수명단축 등과 같은 문제점을 야기하게 된다. 본 논문에서는 이러한 문제점을 일으키는 고주파 누설 전류와 커먼 모드 전압을 감쇄하기 위하여 4 레벨 반파 브릿지 인버터에 의해 커먼 모드 전압과 크기가 같고 극성이 반대인 전압을 생성하고, 이 전압을 커먼 모드 트랜스포머에 인가하여 누설 전류의 원인이 되는 커먼 모드 전압을 상쇄시킬 수 있는 새로운 형태의 능동형 커먼 모드 전압 감쇄기를 제안하였다. 제안된 감쇄기의 동작 성능을 P-SPICE를 이용한 시뮬레이션 및 실험을 통하여 검증하였다.

• 전기학회논문지
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• 제59권6호
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• pp.1053-1058
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• 2010

A large modern wind farm should satisfy the requirements for a grid and accomplish the optimization of the wind farm system. The wind farm intertie protection system should consider a Fault Ride-Through (FRT) requirement for more reliable protection. The wind farm should keep connected to the grid in the case of a grid fault whilst it should be isolated for an intertie fault. This paper proposes a distance relaying algorithm suitable for wind farm intertie protection considering the FRT requirement. The proposed algorithm estimates the impedance based on a differential equation method because the frequency of the voltage and current deviates the nominal frequency. The algorithm extends the reach of Zone 1 up to 100 % of the length of the intertie to implement the FRT requirement. To discriminate an intertie fault from a grid fault, the algorithm uses a voltage blocking scheme because the magnitude of the voltage at the relaying point for an intertie fault becomes less than that for a grid fault. The performance of the algorithm is verified using a PSCAD/EMTDC simulator under various fault conditions. The algorithm can discriminate successfully the intertie fault from grid fault and thus helps to implement the FRT requirement of a wind farm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.834-838
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• 2002

In this paper, we have fabricated 4H-SiC schottky diodes utilizing a metal-oxide overlap structure for electric filed termination. The barrier height and Ideality factor were measured by current-voltage, capacitance-voltage characteristics. Schottky barrier height(SBH) were 1.41ev for Ni and 1.35eV for Pt, 1.52eV for Pt/Ti at room temperature and Pt/Ti Schottky diode exhibited Ideality factor was 1.06 to 1.4 in the range of $25^{\circ}C{\sim}200^{\circ}C$. To improve the reverse bias characteristics, an edge termination technique is employed for Pt/Ti/4H-SiC Schottky rectifiers and the device show excellent characteristics with higher blocking voltage up to 780V compared with unterminated devices.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.713-717
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• 2001

This paper focuses on a network model for GCTs which can be used to investigate high power circuits with or without using RC-snubbers. The series connection of GCTs is commonly applied in the high power inverter field. Here expensive and space-consuming snubbers are applied, to overcome the problem of an asymmetric distribution of the blocking voltage among the single GCTs. As an alternative to large snubbers, a new active gate drive concept is proposed and investigated by simulation.