• Journal of the Korean Society of Radiology
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• v.8 no.6
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• pp.333-338
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• 2014

The fact is that in addition to an increase in social needs that must be managed systematically unnecessary exposure in the field of medical Recent important that the shield has emerged. However, products that are now in practical use, are not subdivided as compared to various medical radiology. Therefore, in the present study, we tried to present with the help of Monte Carlo simulation the structure of the shielding material that has been optimized. Simulated estimation result, the energy of the mammography for (30 kVp) spectrum, check the shielding rate of 90% or more $30{\mu}mPb$, at 2 mmAl case of shielding material of a single, at design time of 1 mmAl and 0.03 mmPb a double shield structure it is determined that more efficient. Also, check the blocking rate of 90% or more $340{\mu}mPb$, at 30 mmAl energy captured general in (80 kVp) spectra, it is considered that a double shield structure, design 1 mmAl and 0.3 mmPb is useful. These results, be used as basic material for the development of commercialization customized products for dose reduction is expected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.216-222
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• 2006

In this paper, we investigated the effect of hydrogen-plasma (H-plasma) treatment on the electrical and optical properties of a quantum dot infrared photodetector (QDIP) with a 5-stacked InAs dots in an InGaAs/GaAs well structure and $Al_{0.3}Ga_{0.7}As/GaAs$ SL (superlattice) current blocking layer. It has been observed that H-plasma treatment didn't affect the band structure of QDIP. It has been also observed that the H-plasma treatment on the QDIP not only enhance the electrical property of QDIP by curing the defect channels in $Al_{0.3}Ga_{0.7}As/GaAs$ SL but also introduce defects in QDIP structure. The H-plasma treatment for 10 min with 20 W of RF power provided the lowest dark current, which made it possible to measure the photo-current (PC) of QDIP whose PC was not detectable without the H-plasma treatment due to the high dark current.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.54-59
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• 2009

It was difficult for the existing rotary kiln to fabricate the fine aggregates under 3 mm due to the sticking phenomenon between specimens. In this study, the vertical type fluidizing furnace was designed and manufactured by which the lightweight fine aggregates of specific gravity $1.1{\sim}1.7$, water absorption $11{\sim}19%$ could be fabricated from the green body of clay: stone sludge: spent bleaching clay = 60 : 30 : 10 (wt%) without sticking-together happening. The minimum sintering temperature for bloating of aggregates was $1130^{\circ}C$. The specimens sintered over $1140^{\circ}C$ showed the typical bloating characteristics of lightweight aggregates and an inner layer was discovered due to widened cracks on a surface. But the crack on a surface did not propagate into a black core area so had no effect on a water absorption of aggregates. The sintering temperature made the thickness of shell and the black core area thin and expanded respectively but the sintering time did not affect the microsturcture of aggregates. The water absorption of aggregates decreased with increasing temperature owing to increased amount of liquid formed on a surface. Also sintering time affected a lot on a water absorption because it takes a time to form a liquid, which change the open pores to closed pores by blocking.

• Journal of IKEEE
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• v.11 no.4
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• pp.158-164
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• 2007

In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.18-23
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• 2009

The effect of hydrogen-nitrogen annealing on the interface trap properties of Metal-Oxide-Nitride-Oxide-Silicon (MONOS) capacitors is investigated by analyzing the capacitors' gate leakage current and the interface trap density between the Si and $SiO_2$ layer. MONOS samples annealed at $850^{\circ}C$ for 30 s by rapid thermal annealing (RTA) are treated by additional annealing in a furnace, using annealing eases $N_2$ and 2% hydrogen and 98% nitrogen gas mixture $(N_2-H_2)$ at $450^{\circ}C$ for 30 mins. Among the three samples as-deposited, annealed in $N_2$ and $N_2-H_2$, MONOS sample annealed in an $N_2-H_2$ environment is found to have the lowest increase of interface-trap density from the capacitance-voltage experiments. The leakage current of sample annealed in $N_2-H_2$ is also lower than that of sample annealed in $N_2$.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.130-131
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• 2003

The magnetic and thermal properties of NiFe/IrMn/CoFe with Mn additions have been studied. As grown CoFe pinned-layers with IrMn-Mn have dominantly larger exchange biasing field( $H_{ex}$) and blocking temperature( $T_{b}$) than when pure I $r_{22}$M $n_{78}$ is used. The magnetic properties improve, $H_{ex}$ and $T_{b}$ improve with 77-78 vol% Mn, but drop considerably with more Mn additions, losing magnetic properties of theb NiFe/IrMn/CoFe with addition 0.6 vol % Mn. The average x-ray diffraction peak ratios fcc (111)CoFe of (111)IrM $n_3$ textures for the Mn inserted total vol of 75, 77, and 79 vol% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between I $r_{22}$M $n_{78}$ and CoFe layers is almost nothing. For two multilayer as-grown samples with ultra-thin Mn layers of 77 vol % and 79 vol %, the $H_{ex}$s are 250 Oe and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was 444 Oe up to 30$0^{\circ}C$ endured of 363 Oe at 40$0^{\circ}C$, respectively. Mn additions improve the magnetic properties and thermal stabilities of NiFe/IrMn/CoFe. Those increase the $H_{ex}$ and $T_{b}$. In applications where higher $H_{ex}$ and $T_{b}$ are accept, proper concentrations of Mn can be used.n can be used.be used.

• Radiation Oncology Journal
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• v.8 no.1
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• pp.115-124
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• 1990

The characteristics of 23 MV photon beam have been presented with respect to clinical parameters of central axis depth dose, tissue-maxi mum ratios, scatter-maximum ratios, surface dose and scatter correction factors. The nominal accelerating potential was found to be $18.5\pm0.5$ MV on the central axis. The half-value layer (HVL) of this photon beam was measured with narrow beam geometry from central axis, and it has been showed the thickness of $24.5\;g/cm^2$. The tissue-maximum ratio values have been determined from measured percentage depth dose data. In our experimental dosimetry, the surface dose of maximum showed only $9.6\%$ of maximum dose at $10\times10\;cm^2$, 100 cm SSD, without blocking tray in. The TMR'S of $0\times0$ field size have been determined to get average $2.3\%$ uncertainties from three different methodis; are zero effective attenuation coefficient, non-ilnear least square fit of TMR's data and effective linear attenuation coefficient from the HVL of 23 MV photon beams of dual energy linear accelerator.

• Applied Microscopy
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• v.32 no.2
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• pp.163-170
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• 2002

Experimatal maxillary sinusitis was induced in New Zealand white rabbits by blocking the maxillary sinus ostium. The distribution of lectin receptors was explored in the mucosa with induced maxillary sinusitis using colloidal gold label complex with lectin WGA purified from wheat germ (Triticum vulgaris). The lectin WGA gold complex, shown to recognize GlcNac (N-acetylglucosamine) and NeuNAc (N-acetylneuraminic acid) regions, was applied to detect binding sites in Lowicryl HM 20 sections and viewed under the electron microscope. An increased height of the cylindric cells, ciliary loss and hyperplasia of the secretory cells were observed. Examination of normal sinus mucosa labeled with gold-labeled lectins showed the distribution of sialoglycoconjugates to be mainly in the ciliary layer and the granules in the secretory cells. Inflamed mucosa had increased labeling intensity of gold-labeled WGA in the cilia and the secretory granules. These results indicate that lectin WGA receptors are located in the cilia and secretory granules. Specific changes in the lectin binding pattern were apparent in the inflamed mucosa in the experimentally induced acute sinusitis, in comparison with normal mucosa, conceivably as a part of host defense reactions.

• Journal of the Korean Geosynthetics Society
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• v.19 no.1
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• pp.25-33
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• 2020

To improvement the swelling characteristics of the existing cutoff wall against the moisture, the permeability of the sand, calcium bentonite and solidifier mixture according to the contact with trichloroethylene (TCE) was evaluated. Characteristics analysis and the permeability test of the research materials were performed. The permeability was decreased as the mixing ratio of the calcium bentonite was increased and it was increased as the mixing ratio of the solidifier was increased. In conclusion, when mixing 15% of calcium bentonite and more than 30% of solidifier, the permeability coefficient in the underground water movement was analyzed as more than α × 10^-4 cm/sec showing that it does not block the underground water movement. In addition, as the permeability coefficient of mixtures after TCE reaction was analyzed as less than α ×10^-7 cm/sec, it satisfied the condition of blocking layer (less than 1.0 × 10^-6 cm/sec). Therefore, the calcium bentonite and solidifier can be utilized as barrier that showing the characteristic of percolation ability conversion in soil and underground water contaminated with TCE.