• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.801-804
• /
• 2005

In this paper, we designed an 8-bit color adjustor for SDTV using Verilog HDL. The conversion block requires a lot of multiplication. So we adopted Booth algorithm to reduce amount of operation and processing time. To improve speed, we designed the system output as parallel structure. We synthesized the designed system using Xilinx ISE and verified the operation through simulation using Modelsim.

• ETRI Journal
• /
• v.29 no.6
• /
• pp.835-837
• /
• 2007

A multi-bit sigma-delta modulator architecture is described for low-distortion performance and a high-speed operation. The proposed architecture uses both a delayed code and a delayed differential code of analog-to-digital converter in the feedback path, thereby suppressing signal components in the integrators and relaxing the timing requirement of the analog-to-digital converter and the scrambler logic. Implemented by a 0.13 ${\mu}m$ CMOS process, the sigma-delta modulator achieves high linearity. The measured spurious-free dynamic range is 89.1 dB for -6 dBFS input signal.

• Proceedings of the IEEK Conference
• /
• 2003.07e
• /
• pp.1791-1794
• /
• 2003

In this Paper, we propose a new watermarking algorithm for 1-bit image authentication using block operation. Observing 3${\times}$3 block patterns, we find the regions to watermark, We describe a specific scheme how to generate data to embed and find pixels most probably invisible under modifications. We also show the experimental results of proposed algorithm.

• 전기의세계
• /
• v.32 no.8
• /
• pp.486-493
• /
• 1983

기존 Echo제거기의 여파기계수를 binary representation할 때 bit수를 줄이기 위하여 자동이득 조절기를 사용한 새로운 Echo제거기를 제안하였다. 적응여파기 계수수가 55이고 .rho.e=16dB, P/S.leq. dB일때 P.leq.0 dB, S>-42 dB인 경우 새echo제거기는 20bit로서 8bit로 규격화된 디지탈 Processor 또는 기억소자등을 사용하면 30%의 bit절약을 가져온다. 수학적 operation은 대단히 경미하게 증가하며 수렴속도도 훨씬 빠르다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.1
• /
• pp.11-20
• /
• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.80-83
• /
• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.

• Proceedings of the IEEK Conference
• /
• 2000.11b
• /
• pp.59-62
• /
• 2000

As the density of memories increases, unwanted interference between cells and coupling noise between bit-lines are increased and testing high density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. From now on, conventional test algorithms have focused on faults between neighborhood cells, not neighborhood bit-lines. In this paper, a new algorithm for NPSFs, and neighborhood bit-line sensitive faults (NBLSFs) based on the NPSFs are proposed. Instead of the conventional five-cell and nine-cell physical neighborhood layouts to test memory cells, a three-cell layout which is minimum size for NBLSFs detection is used. To consider faults by maximum coupling noise by neighborhood bit-lines, we added refresh operation after write operation in the test procedure(i.e., write \longrightarrow refresh \longrightarrow read). Also, we present properties of the algorithm, such as its capability to detect stuck-at faults, transition faults, conventional pattern sensitive faults, and neighborhood bit-line sensitive faults.

• Journal of IKEEE
• /
• v.5 no.1 s.8
• /
• pp.43-51
• /
• 2001

As the density of memories increases, unwanted interference between cells and coupling noise between bit-lines are increased. And testing high-density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. So far, conventional test algorithms have focused on faults between neighborhood cells, not neighborhood bit-lines. In this paper, a new test algorithm for neighborhood bit-line sensitive faults (NBLSFs) based on the NPSFs(Neighborhood Pattern Sensitive Faults) is proposed. And the proposed algorithm does not require any additional circuit. Instead of the conventional five-cell or nine-cell physical neighborhood layouts to test memory cells, a three-cell layout which is minimum size for NBLSFs detection is used. Furthermore, to consider faults by maximum coupling noise by neighborhood bit-lines, we added refresh operation after write operation in the test procedure(i.e.,$write{\rightarrow}\;refresh{\rightarrow}\;read$). Also, we show that the proposed algorithm can detect stuck-at faults, transition faults, coupling faults, conventional pattern sensitive faults, and neighborhood bit-line sensitive faults.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.11 no.1
• /
• pp.64-72
• /
• 2001

This paper is on a design of the high-speed cipher IC using IDEA algorithm. The chip is consists of six functional blocks. The principal blocks are encryption and decryption key generator, input data circuit, encryption processor, output data circuit, operation mode controller. In subkey generator, the design goal is rather decrease of its area than increase of its computation speed. On the other hand, the design of encryption processor is focused on rather increase of its computation speed than decrease of its area. Therefore, the pipeline architecture for repeated processing and the modular multiplier for improving computation speed are adopted. Specially, there are used the carry select adder and modified Booth algorithm to increase its computation speed at modular multiplier. To input the data by 8-bit, 16-bit, 32-bit according to the operation mode, it is designed so that buffer shifts by 8-bit, 16-bit, 32-bit. As a result of simulation by 0.25 $\mu\textrm{m}$ process, this IC has achieved the throughput of 1Gbps in addition to its small area, and used 12,000gates in implementing the algorithm.

• KIPS Transactions on Computer and Communication Systems
• /
• v.11 no.6
• /
• pp.167-174
• /
• 2022

PIPO lightweight block ciphers were announced in ICISC'20. In this paper, a single-block optimization implementation and parallel optimization implementation of PIPO lightweight block cipher ECB, CBC, and CTR operation modes are performed on a 32-bit RISC-V processor. A single block implementation proposes an efficient 8-bit unit of Rlayer function implementation on a 32-bit register. In a parallel implementation, internal alignment of registers for parallel implementation is performed, and a method for four different blocks to perform Rlayer function operations on one register is described. In addition, since it is difficult to apply the parallel implementation technique to the encryption process in the parallel implementation of the CBC operation mode, it is proposed to apply the parallel implementation technique in the decryption process. In parallel implementation of the CTR operation mode, an extended initialization vector is used to propose a register internal alignment omission technique. This paper shows that the parallel implementation technique is applicable to several block cipher operation modes. As a result, it is confirmed that the performance improvement is 1.7 times in a single-block implementation and 1.89 times in a parallel implementation compared to the performance of the existing research implementation that includes the key schedule process in the ECB operation mode.