• Proceedings of the Korean Nuclear Society Conference
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• 1999.05a
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• pp.31-31
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• 1999

• 전기의세계
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• v.32 no.8
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• pp.486-493
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• 1983

기존 Echo제거기의 여파기계수를 binary representation할 때 bit수를 줄이기 위하여 자동이득 조절기를 사용한 새로운 Echo제거기를 제안하였다. 적응여파기 계수수가 55이고 .rho.e=16dB, P/S.leq. dB일때 P.leq.0 dB, S>-42 dB인 경우 새echo제거기는 20bit로서 8bit로 규격화된 디지탈 Processor 또는 기억소자등을 사용하면 30%의 bit절약을 가져온다. 수학적 operation은 대단히 경미하게 증가하며 수렴속도도 훨씬 빠르다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.8A
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• pp.942-949
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• 2004

This paper proposes and analyzes the anti-collision algorithm in Ubiquitous ID system. We mathematically compares the performance of the proposed algorithm with that of binary search algorithm, slotted binary tree algorithm using time slot, and bit-by-bit binary tree algorithm proposed by Auto-ID center. We also validated analytic results using OPNET simulation. Based on the analytic results, comparing the proposed algorithm with bit-by-bit algorithm which is the best of existing algorithms, the performance of proposed algorithm is about 5% higher when the number of tags is 20, and 100% higher when the number of tags is 200.

• Geomechanics and Engineering
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• v.8 no.4
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• pp.477-493
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• 2015

In rock drilling, the most important characteristic to clarify is the wear of the drill bits. The reason that the rock drill bits fail with time is wear. In dry sliding contact adhesive wear deteriorates the materials in contact, quickly, and is the result of shear fracture in the momentary contact joins between the surfaces. This paper aims at presenting an overview of the assessment of WC/Co cemented carbide (CC) tricone bit in rotary drilling. To study wear of these bits, two approaches have been used in this research. Firstly, the new bits were weighted before they mounted on the drill rigs and also after completion their useful life to obtain bit weight loss percentage. The characteristics of the rock types drilled by using such this bit were measured, simultaneously. Alternatively, to measure contact wear, namely, matrix wear a micrometer has been used with a resolution of 0.02 mm at different direction on the tricone bits. Equivalent quartz content (EQC), net quartz content (QC), muscovite content (Mu), coarseness index (CI) of drill cuttings and compressive strength of rocks (UCS) were obtained along with thin sections to investigate mineralogical properties in detail. The correlation between effective parameters and bit wear were obtained as result of this study. It was observed that UCS shows no significant correlation with bit wear. By increasing CI and cutting size of rocks wear of bit increases.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.8
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• pp.17-22
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• 2007

In this paper, we propose a threshold estimation algorithm for a noncoherent IR-UWB receiver using 1-bit sampler. The proposed method reduces the hardware complexity by using the information of binary data resulted from 1-bit sampler instead of measuring the energy level of a received signal. Besides, mathematical modeling shows that the performances are similar to those of theoretically optimal threshold in terms of bit error rate. Computer simulations based on the IEEE 802.15.4a channel model also demonstrate the superiority of the proposed algorithm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.17-24
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• 2004

This paper describes a novel bit line structure to minimize coupling noise induced by coupling capacitance between bit lines. In DRAMs coupling capacitance is inherently present bit lines. As in submicron process the bit line space gets narrower. bit line coupling capacitance increases and this increased coupling capacitance sharply raises cross-talk noise. In this paper using different layers of metal for adjacent bit lines has been tested to reduces cross-talk noise and a novel bit line structure capable of reducing capacitance is introduced and verified.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.4
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• pp.83-90
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• 2004

In this paper, we proposed a new instruction set(X32Y ISA) with 3 different types of instruction mode. The proposed instruction set organizes 32-bit, 24-bit, 16-bit instruction in order to solves a problem of memory size limitation in an embedded microprocessor. We designed a 32-bit 5 stage pipeline RISC microprocessor based on the X32V ISA. To verify the proposed the X32V ISA and a microprocessor, we estimated a program code size of multimedia application programs using a X32V simulator. In result, we verified that the Light mode and the Ultra Light mode obtains 8%, 27% reduction of a program code size through comparison with the Default mode. The proposed microprocessor was verified all X32V instructions execution at Xilinx FPGA with 33MHz operating frequency,

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.1-8
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• 2000

In this paper, design of sense amplifier for a flash memory minimizing bit line disturbance due to common bit line is presented. There is a disturbance problem at output modes by using common bit line, when the external devices access an internal flash memory. This phenomenon is resulted form hot carrier between floating gates and bit lines by thin oxide thickness. To minimize bit line disturbance, lower it line voltage is required and need sense amplifier to detect data existence in lower bit line voltage. Proposed circuits is operated at lower bit line voltage and we fabricated a embedded flash memory MCU using 0.6u technology.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1178-1188
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• 1995

Bi4Ti3O12 (BIT) and its rare earth (Y, Nd, Sm, Gd)-substituted derivatives were synthesized using a sol-gel method to investigate their microstructures, cystal structures and electrical properties depending on the subsituted elemetns. Nd- or Sm-substitution into BIT appeared to be favorable, while Y- or Gd-substitution occurred with a pyrochlore phase. This suggests that a smaller trivalent rare earth ion may not be favorable in the structure of BIT. The rare earth derivatives showed that their particle sizes and shapes were considerably different depending on the kinds of substituted elements. Y-substitution resulted in developing a relatively even particle size and a dense microstructure. In structure, they may be similar to the pseudo-orthorhombic BIT but close to a paraelectric tetragonal phase. Their a (or b) axes were shortened, compared to the one of BIT. Such a distortion may result a decrease in the tilting of TiO6. BIT and the derivatives showed that their dielectric constants and losses were 40~120 and less than 0.03, respectively in the frequency range of 1~10 MHz. The dielectric loss of Y-substituted derivative was the lowest one and changed a little to frequency. Curie points were observed in all the derivatives like BIT to suggest that they would be ferroelectric. The temperature stability of the delectric properties of the derivatives below the Curie points were relatively better than the one of BIT.