• Title/Summary/Keyword: Bismuth oxides

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Terbium and Tungsten Co-doped Bismuth Oxide Electrolytes for Low Temperature Solid Oxide Fuel Cells

  • Jung, Doh Won;Lee, Kang Taek;Wachsman, Eric D.
    • Journal of the Korean Ceramic Society
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    • v.51 no.4
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    • pp.260-264
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    • 2014
  • We developed a novel double dopant bismuth oxide system with Tb and W. When Tb was doped as a single dopant, a Tb dopant concentration more than 20 mol% was required to stabilize bismuth oxides with a high conductivity cubic structure. High temperature XRD analysis of 25 mol% Tb-doped bismuth oxide (25TSB) confirmed that the cubic structure of 25TSB was retained from room temperature to $700^{\circ}C$ with increase in the lattice parameter. On the other hand, we achieved the stabilization of high temperature cubic phase with a total dopant concentration as low as ~12 mol% with 8 mol% Tb and 4 mol% W double dopants (8T4WSB). Moreover, the measured ionic conductivity of 10T5WSB was much higher than 25TSB, thus demonstrating the feasibility of the double dopant strategy to develop stabilized bismuth oxide systems with higher oxygen ion conductivity for the application of SOFC electrolytes at reduced temperature. In addition, we investigated the long-term stability of TSB and TWSB electrolytes.

Preparation and properties of multiferroic bismuth iron oxides

  • Nam, Joong-Hee;Joo, Yong-Hui;Cho, Jeong-Ho;Chun, Myoung-Pyo;Kim, Byung-Ik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.2
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    • pp.66-69
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    • 2009
  • The compositional dependence of bismuth iron oxides and effect of La-substitutions in the structure of $BiFeO_3$ compounds were investigated, which compounds were synthesized by conventional ceramic processing. It is shown that some of bismuth iron oxides including $BiFeO_3$ show the narrow single phase region. The effect of La-doping in $BiFeO_3$ was presented as disappearance of many impurity phases of Bi-Fe-O compounds. The lower electrical resistivity was obtained as those compositions of Fe deficient region and La-doped $BiFeO_3$. The saturation magnetization of La-doped $BiFeO_3$ was increased with La content. The dielectric dispersion was also observed for those Bi-Fe-O compounds with Fe deficient and La-doped $BiFeO_3$ at low frequencies under 1 kHz.

Absence of Distinctively High Grain-Boundary Impedance in Polycrystalline Cubic Bismuth Oxide

  • Jung, Hyun Joon;Chung, Sung-Yoon
    • Journal of the Korean Ceramic Society
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    • v.54 no.5
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    • pp.413-421
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    • 2017
  • In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.

Preparation of ferroelectric SrBi2Ta2O9 thin films deposited by multi-target sputtering

  • Hoon, Yang-Cheol;Gil, Yoon-Soon
    • Journal of Korean Vacuum Science & Technology
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    • v.2 no.2
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    • pp.92-96
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    • 1998
  • Ferroelectric Bi-layered oxides SrBi2Ta2O9 (SBT) thin films have been deposited on Pt/Ti/SiO2/Si substrates using multi-target sputtering. Structure, composition, and electrical properties have been investigated on films. The SBT films were deposited with the various bismuth sputtering powers. The SBT films deposited with the bismuth sputtering power of 20 W have the most dense microstructure and the remanent polarization (Pr) of 9.2 ${\mu}$C/cm and the coercive field (Ec) of 43.8 kV/cm at an applied voltage of 5V. The SBT films deposited with the bismuth sputtering power of 20W showed a fatigue-free characteristics up to 1.0${\times}$1010 cycles under 5V bipolar pulse and a leakage current density of 2.0${\times}$10-8 A/$\textrm{cm}^2$ at 200 kV/cm.

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Room-Temperature Ferromagnetic Behavior in Ferroelectric BiFeO3-BaTiO3 System Through Engineered Superexchange Path (초교환 상호작용 제어를 통해 강유전 BiFeO3-BaTiO3 시스템에서 유도된 상온 강자성 거동)

  • Ko, Nu-Ri;Cho, Jae-Hyeon;Jang, Jongmoon;Jo, Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.5
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    • pp.386-392
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    • 2021
  • Multiferroics exhibiting the coexistence and a possible coupling of ferromagnetic and ferroelectric order are attracting widespread interest in terms of academic interests and possible applications. However, room-temperature single-phase multiferroics with soft ferromagnetic and displacive ferroelectric properties are still rare owing to the contradiction in the origin of ferromagnetism and ferroelectricity. In this study, we demonstrated that sizable ferromagnetic properties are induced in the ferroelectric bismuth ferrite-barium titanate system simply by introducing Co ions into the A-site. It is noted that all modified compositions exhibit well-saturated magnetic hysteresis loops at room temperature. Especially, 70Bi0.95Co0.05FeO3-30Ba0.95Co0.05TiO3 manifests noticeable ferroelectric and ferromagnetic properties; the spontaneous polarization and the saturation magnetization are 42 µC/cm2 and 3.6 emu/g, respectively. We expect that our methodology will be widely used in the development of perovskite-structured multiferroic oxides.

Direct Determination of Cationic Disordering in Sodium Bismuth Titanate

  • Choi, Si-Young;Ikuhara, Yuichi
    • Applied Microscopy
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    • v.42 no.3
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    • pp.164-173
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    • 2012
  • The relaxor ferroelectric feature in lead-free perovskite oxides, where the dipoles are randomly oriented and they can be feasibly aligned parallel to the external bias, is attracting lots of attention in the field of piezoelectric materials science, since it is one of candidates to replace the toxic lead-based materials that are still being commercially used. However, the origin of relaxor characteristic and its related atomic structure are still ambiguous. In this study, $Na_{1/2}Bi_{1/2}TiO_3$, chosen as a model relaxor system, was found to exhibit a cationic-disordered atomic structure; and furthermore the nonpolar atomic structure and its related oxygen tilting were ascertained via annular bright field imaging skill. We also found that this cationic disordering gives rise to the local formation of atomic vacancies.

Solution-Processed Metal Oxide Thin Film Nanostructures for Water Splitting Photoelectrodes: A Review

  • Lee, Mi Gyoung;Park, Jong Seong;Jang, Ho Won
    • Journal of the Korean Ceramic Society
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    • v.55 no.3
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    • pp.185-202
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    • 2018
  • Photoelectrochemical (PEC) cells can convert solar energy, the largest potential source of renewable energy, into hydrogen fuel which can be stored, transported, and used on demand. In terms of cost competitiveness compared with fossil fuels, however, both photocatalytic efficiency and cost-effectiveness must be achieved simultaneously. Improvement of cost-effective, scalable, versatile, and eco-friendly fabrication methods has emerged as an urgent mission for PEC cells, and solution-based fabrication methods could be capable of meeting these demands. Herein, we review recent challenges for various nanostructured oxide photoelectrodes fabricated by solution-based processes. Hematite, tungsten oxide, bismuth vanadate, titanium oxide, and copper oxides are the main oxides focused on, and various strategies have been attempted with respect to these photocatalyst materials. The effects of nanostructuring, heterojunctions, and co-catalyst loading on the surface are discussed. Our review introduces notable solution-based processes for water splitting photoelectrodes and gives an outlook on eco-friendly and cost-effective approaches to solar fuel generation and innovative artificial photosynthesis technologies.

Transparent Nano-floating Gate Memory Using Self-Assembled Bismuth Nanocrystals in $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) Pyrochlore Thin Films

  • Jeong, Hyeon-Jun;Song, Hyeon-A;Yang, Seung-Dong;Lee, Ga-Won;Yun, Sun-Gil
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.20.1-20.1
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    • 2011
  • The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

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Electrochemical Behaviors of Polycrystalline Silver Electrodes in 8M KOH Solutions Containing Bi2O3 (Bi2O3를 첨가한 8M KOH용액에서 다결정 Ag전극의 전기화학적 거동)

  • Hur, Tae-Uk;Kong, Yeong-Kyung;Chung, Won-Sub
    • Journal of the Korean Electrochemical Society
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    • v.8 no.1
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    • pp.17-23
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    • 2005
  • The electrochemical behaviors of polycrystalline silver electrodes in 8M KOH solutions containing $Bi_2O_3$ were studied under various conditions by cyclic voltammetry, potentiostatic and galvanostatic techniques as well as the morphology of the silver oxide structures by SEM. It was found that three new compounds comprising silver, bismuth, and oxygen as well as $Bi_2O_3$, $Ag_2O$ and AgO were formed during the electrochemical oxidation of silver. In addition, the potentiostatic current transients were characterized by the appearances of the first current peaks corresponding to the formation of silver oxides, and the second current peaks corresponding to the Ag-Bi-O compounds, indicating the presence of the nucleation and 3D growth mechanism, in the potential regions of $Ag_2O$ and AgO, respectively. Microscopic examinations showed that two types of silver (I) oxide morphologies are formed in the potential region of $Ag_2O$.