• Journal of the Korean Vacuum Society
• /
• v.11 no.4
• /
• pp.230-234
• /
• 2002

Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed $LiNbO_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3$thin film. The dielectric constant of the $LiNbO_3$film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of $1{\times}10^{-8}\textrm{A/cm}^2$ order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about $10^{11}/cm^2$.eV. The typical measured remnant polarization(2Pr) value was about 1.2 $\mu\textrm{C/cm}^2$, in an applied electric field of $\pm$ 300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about $10^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.624-627
• /
• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.11
• /
• pp.27-32
• /
• 1999

Metal-ferroelectric-semiconductor devices by susing rapid thermal annealed $LiNbO_3/Si$(100) structures were fabricated and demonstrated nonvolatile memory operations. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were about $600cm^2/V{\cdot}s$ and 0.16mS/mm, respectively. The ID-VG characteristics of MFSFET's showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3 films. The drain current of the on state was more than 4 orders of magnitude larger than the off state current at the same read gate voltage of 0.5V, which means the memory operation of the MFSFET. A write voltage as low as ${\pm}3V$, which is applicable to low power integrated circuits, was used for polarization reversal. The ferroelectric capacitors showed no polarization degradation up to $10^{10}$ switching cycles with the application of symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) of 500kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.4
• /
• pp.250-254
• /
• 2016

Currently, power conversion system which converts AC to DC Power is applied in domestic urban railway. The diode rectifier is used in most of them. However the diode rectifier can not control the output voltage and can not regenerate power as well. On the other hand, PWM (pulse width modulation) converter using IGBT (isolated gate bipolar transistor) can control output voltage, allowing it to reduce the output voltage drop. Moreover the Bi-directional conduction regenerates power which does not require additional device for power regeneration control. This paper compared the simulation results for the DC power supply system on both the diode rectifier and the PWM converter. Under the same load condition, simulation circuit for each power supply system was constructed with the PSIM (performance simulation and modeling tool) software. The load condition was set according to the resistance value of the currently operating impedance of light rail line, and the line impedance was set according to the distance of each substations. The train was set using a passive resistor. PI (proportional integral) controller was applied to regulate the output voltage. PSIM simulation was conducted to verify that the PWM Converter was more efficient than the diode rectifier in DC Traction power supply system.

• Journal of Korean Society for Atmospheric Environment
• /
• v.26 no.6
• /
• pp.683-689
• /
• 2010

Reforming of methane with carbon dioxide has been carried out using a bipolar pulse driven elongated arc reactor operating at atmospheric pressure and non-equilibrium regime. This plasma reactor is driven by two kinds of power supply, characterized by different voltage-current characteristics under the same operating power and frequency. Varying the $CO_2/CH_4$ ratio and the discharge power, the conversion rate, yield, and reforming efficiency for the two power supplies are investigated in conjunction with the static and dynamic behaviors of voltage and current. It is found that not only the values of voltage and current but also their shapes give an influence on the reforming performances. Finally, a better electrical operation regime for the efficient plasma reforming is proposed based on the relationship between the voltage-current characteristics and the reforming performance.

• Journal of Veterinary Clinics
• /
• v.27 no.5
• /
• pp.569-572
• /
• 2010

A 4-year-old neutered female Pekingese dog (weighing 3.6 kg) was referred with the primary complaint of exercise intolerance with occasional syncope. Physical examination revealed irregularly irregular heart rhythm with persistent pulse deficits. The 12-lead surface ECG showed a marked sinus arrest with occasional junctional escape beats, indicating a sick sinus syndrome. Permanent transvenous cardiac pacing with a rate-responsive bipolar implantable pacemaker (VVIR type) was performed in the right ventricle. After pacemaker implantation, the clinical signs were remarkably improved. No further syncopal episodes have yet been occurred after implantation.

• Journal of IKEEE
• /
• v.17 no.1
• /
• pp.77-82
• /
• 2013

In this paper, dc-dc buck converter controled by the peak current-mode pulse-width-modulation (PWM) presented. Based on the small-signal model, we propose the novel methods of the power stage and the systematic stability designs. To improve the reliability and performance, over-temperature and over-current protection circuits have been designed in the dc-dc converter systems. To prevent electrostatic An electrostatic discharge (ESD) protection circuit is proposed. The proposed dc-dc converter circuit exhibits low triggering voltage by using the gate-substrate biasing techniques. Throughout the circuit simulation, it confirms that the proposed ESD protection circuit has lower triggering voltage(4.1V) than that of conventional ggNMOS (8.2V). The circuit simulation is performed by Mathlab and HSPICE programs utilizing the 0.35um BCD (Bipolar-CMOS-DMOS) process parameters.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.5
• /
• pp.319-325
• /
• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Korean Journal of Materials Research
• /
• v.7 no.6
• /
• pp.505-509
• /
• 1997

FRAM(Ferroelectric Random Access memory)에의 응용을 위해 rf magnetron sputtering법을 이용하여 SrB $i_{2}$T $a_{2}$ $O_{9}$(SBT)박막을 증착하였다. 사용된 기판은 Pt/Ti/Si $o_{2}$Si이었으며 50$0^{\circ}C$에서 증착한 후 80$0^{\circ}C$의 산소 분위기 하에서 1시간 동안 열처리하였다. 증착시 증착 압력을 변화시켜 가면서 이에 따른 특성의 변화를 고찰하였다. 박막내의 Bi와 Sr의 부족을 보상하기 위해 20mole%의 Bi $O_{2}$와 30mole%의 SrC $O_{3}$를 과잉으로 넣어 타겟을 제조후 사용하였고 박막들의 두께는 300nm의 두께를 가지며 증착압력에 따라 다른 미세 구조르 보였다. 10mtorr에서 증착한 박막의 조성은 S $r_{0.6}$B $i_{3.8}$Ta/ sub 2.0/ $O_{9.0}$이었다. 이 SBT 박막의 잔류 분극(2 $P_{r}$)과 보전계(2 $E_{c}$)값은 각각 인가 전압 5V에서 18.5 $\mu%C/$\textrm{cm}^2$과 150kV/cm이었고, signal/noise비는 3V에서 4.6을 나타내었다. 5V의 bipolar pulse하에서 $10^{10}$cycle까지 피로 현상이 나타나지 않았으며, 누설 전류 밀도는 133kV/cm에서 약 1x$10^{-7A}$$\textrm{cm}^2$의 값을 보였다.을 보였다.

• Proceedings of the KIPE Conference
• /
• 2019.07a
• /
• pp.257-259
• /
• 2019

본 논문은 광물 탐사를 위한 25kW급 양극성 펄스전원장치에 대해 기술한다. 소프트스위칭 기반의 고효율 LCC 공진형 컨버터와 풀 브리지 기반 양극성 펄스 스위칭부로 구성된 단위 모듈(500V, 12.5A)을 기반으로 설계한다. LCC 공진형 컨버터는 전류의 rms값을 줄이기 위해 공진 전류모양을 사다리꼴 형태로 설계하여 도전 손실측면에서 크게 개선되었고, 높은 전력밀도를 달성하기 위해 변압기의 누설 인덕턴스를 공진 파라메터로 활용한다. 추가적으로, 짧은 펄스폭을 가지도록 설계된 게이트 구동 회로는 출력을 DC에서 8kHz의 넓은 주파수 범위에서 동작시킬 뿐만 아니라 게이트 신호를 전달하기 위한 변압기의 사이즈를 줄이기 위해 제안된다. 단위모듈 형태로 개발된 양극성 펄스전원장치는 4개의 모듈이 직병렬로 결선되어 부하조건에 따라 Grounded dipole mode (2kV, 12.5A) 또는 Loop mode (500V, 50A)로 동작한다. 4모듈 직병렬 운전 시 발생하는 모듈 간 전압 불균형 문제를 해결하기 위해 메인 변압기에 보상권선이 감긴다. 본 논문에서는 개발된 양극성 펄스전원 장치의 설계를 저항부하 실험 및 태백산 탐사시험 결과를 바탕으로 검증한다.