• ETRI Journal
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• v.38 no.2
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• pp.272-279
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• 2016

In this paper, a new structure for an advanced high holding voltage silicon controlled rectifier (AHHVSCR) is proposed. The proposed new structure specifically for an AHHVSCR-based electrostatic discharge (ESD) protection circuit can protect integrated circuits from ESD stress. The new structure involves the insertion of a PMOS into an AHHVSCR so as to prevent a state of latch-up from occurring due to a low holding voltage. We use a TACD simulation to conduct a comparative analysis of three types of circuit - (i) an AHHVSCR-based ESD protection circuit having the proposed new structure (that is, a PMOS inserted into the AHHVSCR), (ii) a standard AHHVSCR-based ESD protection circuit, and (iii) a standard HHVSCR-based ESD protection circuit. A circuit having the proposed new structure is fabricated using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology. The fabricated circuit is also evaluated using Transmission-Line Pulse measurements to confirm its electrical characteristics, and human-body model and machine model tests are used to confirm its robustness. The fabricated circuit has a holding voltage of 18.78 V and a second breakdown current of more than 8 A.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.17-20
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• 1999

The retention and fatigue properties of ferroelectric LiNbO$_3$ thin films were studied. Metal-ferroelectric-semiconductor(MFS) devices by using rapid thermal annealed LiNbO$_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS devices. The I$_{D}$-V$_{G}$ characteristics of MFSFET\`s showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin film. The ferroelectric capacitors showed practically no polarization degradation up to about 10$^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) in the 500kHz. The retention properties of the LiNbO$_3$ thin films were quite good up to about 10$^{3}$ s . s .

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1169-1171
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• 2003

This paper presents a 1.6[kW]class single phase high power factor(HPF) pulse width modulation(PWM) boost rectifier featuring soft commutation of the active switches at zero current. It incorporates the most desirable properties of conventional PWM and soft switching resonant techniques. The input current shaping is achieved with average current mode control and continuous inductor current mode. This new PWM converter provides zero current turn on and turn off of the active switches, and it is suitable for high power applications employing insulated gate bipolar transistors(IGBT'S). The principle of operation, the theoretical analysis, a design example, and experimental results from laboratory prototype rated at 1.6[kW] with 400[Vdc] output voltage are presented. The measured efficiency and the power factor were 96.2[%] and 0.99[%], respectively, with an input current Total Harmonic Distortion(THD) equal to 3.94[%], for an input voltage with THD equal to 3.8[%], at rated load.

• Proceedings of the KSR Conference
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• 2008.11b
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• pp.1710-1716
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• 2008

The Loop Heat Pipe (LHP) operates to pump the working fluid by means of the capillary force in a wick structure. Particularly, it is difficult to design and manufacture the evaporator consisted of a grooved container and a compensation chamber as well as the wick structure. This study is related to design and manufacture the grooved container coupled with wick structure, the properties of the wick structure such as the permeability, the porosity, and the maximum capillary pressure were measured to apply the cooling technology for Insulated Gate Bipolar Transistor (IGBT). The container of the LHP was manufactured by the electrical discharge process and the wick structure was sintered with the nickel particle by an axial-press apparatus with the pulse electronic discharge. As results, the properties of the wick were experimentally obtained about 60% of the porosity, 35kPa of the maximum capillary force and $1.53{\times}10-13m2$ of the permeability.

• Journal of Biomedical Engineering Research
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• v.22 no.6
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• pp.487-496
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• 2001

In this study, a galvanic stimulator providing bipolar mode controlled by a PIC(peripheral interface controller) was constructed to evaluate vestibular function The maximum load and maximum current intensity of the constant current source were 3$k\Omega$ and 5mA. respectively. and it could Produce DC, sine wavers. or Pulse waves. Eve movements of 20 normal subjects by galvanic stimulation were analyzed using a commercial videooculogragh. During stimulating with DC for 30 sec. we recorded the response of eye movement with current intensity of 0.75. 1 2, and 3 mA. Nystagmus occurred to all the subjects when the galvanic stimulus intensity was larger than 2 mA. Average SPV(slow Phase eye movement velocity) and the number of nystagmus increased from 7.1 to 4.8 deg/sec and from 17 to 48, respectively, when the stimulus current increased from 0.75 to 3 mA. All the fast eye movement of the nystagmus were the direction of the negative electrode. The asymmetry which means the difference between right- and left-eye movements decreased when the stimulus intensity increased. It is expected that this study would be useful in evaluating vestibular function and in studying basic Physiology mechanism of vestibular ocular reflex by galvanic stimulus .

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.4
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• pp.120-126
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• 2001

For the past five years, Inha University has been observing the electric fields produced by cloud-to-ground return strokes. This paper presents the summary of most recent results. Statistics on the zero-to-peak rise time, the zero-to-zero crossing time and the amplitude ratio of the second peak in the opposite polarity to the first peak were examined. The radiation electric fields produced by distant cloud-to-ground return strokes were substantially same pattern. The first return stroke field starts with a slowly increasing front and rises abruptly to peak. The rising portions of the electric fields produced by cloud-to-ground return strokes last 1 $mutextrm{s}$ to a few $mutextrm{s}$. The mean values of the zero-to-peak rise times of electric fields were 5.72 $mutextrm{s}$ and 4.12 $mutextrm{s}$ for the positive and the negative cloud-to-ground return strokes, respectively. The mean of the zero-to-zero crossing time for the positive return strokes was 29.48 $mutextrm{s}$ compared with 38.54 $mutextrm{s}$ for the negative return strokes. The depths of the dip after the peak of return stroke electric fields also have the dependence on the polarity of cloud-to-ground return stroke, and the mean values for the positive and negative cloud-to-ground return strokes were 33.55 and 28.19%, respectively.

• Journal of Information Display
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• v.13 no.2
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• pp.73-82
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• 2012

In this paper, a light-emitting diode (LED) backlight driver integrated circuit (IC) for medium-sized liquid crystal displays (LCDs) is proposed. In the proposed IC, a linear current regulator with matched internal resistors and an adaptive phase-shifted pulse-width modulation (PWM) dimming controller are also proposed to improve LED current uniformity and reliability. The double feedback loop control boost converter is used to achieve high power efficiency, fast transient characteristic, and high dimming frequency and resolution. The proposed IC was fabricated using the 0.35 ${\mu}m$ bipolar-CMOS-DMOS (BCD) process. The LED current uniformity and LED fault immunity of the proposed IC were verified through experiments. The measured power efficiency was 90%; the measured LED current uniformity, 97%; and the measured rising and falling times of the LED current, 86 and 7 ns, respectively. Due to the fast rising and falling characteristics, the proposed IC operates up to 39 kHz PWM dimming frequency, with an 8-bit dimming resolution. It was verified that the phase difference between the PWM dimming signals is changed adaptively when LED fault occurs. The experiment results showed that the proposed IC meets the requirements for the LED backlight driver IC for medium-sized LCDs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.