• Title/Summary/Keyword: Bipolar process

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A Design of PFM/PWM Dual Mode Feedback Based LLC Resonant Converter Controller IC for LED BLU (PFM/PWM 듀얼 모드 피드백 기반 LED BLU 구동용 LLC 공진 변환 제어 IC 설계)

  • Yoo, Chang-Jae;Kim, Hong-Jin;Park, Young-Jun;Lee, Kang-Yoon
    • Journal of IKEEE
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    • v.17 no.3
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    • pp.267-274
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    • 2013
  • This paper presents a design of LLC resonant converter IC for LED backlight unit based on PFM/PWM dual-mode feedback. Dual output LLC resonant architecture with a single inductor is proposed, where the master output is controlled by the PFM and slave output is controlled by the PWM. To regulate the master output PFM is used as feedback to control the frequency of the power switch. On the other hand, PWM feedback is used to control the pulse width of the power switch and to regulate the slave output. This chip is fabricated in 0.35um 2P3M BC(Bipolar-CMOS-DMOS) Process and the die area is $2.3mm{\times}2.2mm$. Current consumptions is 26mA from 5V supply.

Design of a Gate-VDD Drain-Extended PMOS ESD Power Clamp for Smart Power ICs (Smart Power IC를 위한 Gate-VDD Drain-Extened PMOS ESD 보호회로 설계)

  • Park, Jae-Young;Kim, Dong-Jun;Park, Sang-Gyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.10
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    • pp.1-6
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    • 2008
  • The holding voltage of the high-voltage MOSFETs in snapback condition is much smaller than the power supply voltage. Such characteristics may cause the latcup-like problems in the Smart Power ICs if these devices are directly used in the ESD (Electrostatic Discharge) power clamp. In this work, a latchup-free design based on the Drain-Extended PMOS (DEPMOS) adopting gate VDD structure is proposed. The operation region of the proposed gate-VDD DEPMOS ESD power clamp is below the onset of the snapback to avoid the danger of latch-up. From the measurement on the devices fabricated using a $0.35\;{\mu}m$ BCD (Bipolar-CMOS-DMOS) Process (60V), it was observed that the proposed ESD power clamp can provide 500% higher ESD robustness per silicon area as compared to the conventional clamps with gate-driven LDMOS (lateral double-diffused MOS).

Effect by Temperature Distribution of Target Surface during Sputtering by Bipolar Pulsed Dc and Continuous Dc (직류와 양극성 펄스직류에 의한 스퍼터링시 타겟 표면의 온도 분포와 그 영향)

  • Yang, Won-Kyun;Joo, Jung-Hoon;Kim, Young-Woo;Lee, Bong-Ju
    • Journal of the Korean Vacuum Society
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    • v.19 no.1
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    • pp.45-51
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    • 2010
  • We measured the temperature of target surface inducing by various physical phenomenon on magnetron sputtering target and confirmed the possibilities if the temperature distribution could affect plasma and deposited thin film. The target of magnetron sputtering has two types: round type and rectangular type. In a rectangular target, the concentrated discharge area by corner effect by magnetic field and non-uniform erosion of target are generated. And we found the generation of non-uniform temperature distribution on the target surface from this. This area was $10{\sim}20^{\circ}C$ higher than non-sputtering area. And if particles are generated during sputtering process, they were $20^{\circ}C$ higher than the area where is higher than non-sputtering area. These effects result in non-uniformity of thin films, crack of ceramic target, and shortening target life by non-uniform erosion.

Optimization Method for MEA Performance Considering the Non-Uniformity of Operating Condition in a Large-area Bipolar Plate (대면적 분리판의 운전 환경 불균일성을 고려한 MEA 성능최적화 방법)

  • Kim, Sungmin;Sohn, Young-Jun;Woo, Seunghee;Park, Seok-Hee;Jung, Namgee;Yim, Sung-Dae
    • New & Renewable Energy
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    • v.17 no.2
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    • pp.50-58
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    • 2021
  • We proposed an MEA development methodology that accurately measures intrinsic MEA performance while considering the uneven reaction environments formed inside a large-area BP. To facilitate measurement of the inherent MEA performance, we miniaturized the active area of the MEA to 3 cm2, and prepared two MEAs with different ionomer contents of 0.65 and 0.80 (I/C). By simulating the operating conditions of a 100 cm2 BP at the inlet (I), center (C), and outlet (O), the oxygen concentration and relative humidity were determined to be 20.7, 13.8, 11.7%, and 50, 66.1, and 70.1% respectively. We measured the performance and electrochemical analysis of the prepared MEAs under the three simulated conditions. Based on the results of statistical analysis of the evaluated MEA performance data, I/C 0.65 MEA had a higher average performance and lower performance deviation than I/C 0.80 MEA. Hence, it can be concluded that an I/C 0.65 MEA is a more effective MEA for large-area BP. Based on the above research process, we confirmed the effectiveness of the proposed MEA development methodology.

Formation of a large-scale quasi-circular flare ribbon enclosing three-ribbon through two-step eruptive flares

  • Lim, Eun-Kyung;Yurchyshyn, Vasyl;Kumar, Pankaj;Cho, Kyuhyoun;Kim, Sujin;Cho, Kyung-Suk
    • The Bulletin of The Korean Astronomical Society
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    • v.41 no.2
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    • pp.42.1-42.1
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    • 2016
  • The formation process and the dynamical properties of a large-scale quasi-circular flare ribbon were investigated using the SDO AIA and HMI data along with data from RHESSI and SOT. Within one hour time interval, two subsequent M-class flares were detected from the NOAA 12371 that had a ${\beta}{\gamma}{\delta}$ configuration with one bipolar sunspot group in the east and one unipolar spot in the west embedded in a decayed magnetic field. Earlier M2.0 flare was associated with a coronal loop eruption, and a two-ribbon structure formed within the bipolar sunspot group. On the other hand, the later M2.6 flare was associated with a halo CME, and a quasi-circular ribbon developed encircling the full active region. The observed quasi-circular ribbon was strikingly large in size spanning 650" in north-south and 500" in east-west direction. It showed the well-known sequential brightening in the clockwise direction during the decay phase of the M2.6 flare at the estimated speed of 160.7 km s-1. The quasi-circular ribbon also showed the radial expansion, especially in the southern part. Interestingly, at the time of the later M2.6 flare, the third flare ribbon parallel to the early two-ribbon structure also developed near the unipolar sunspot, then showed a typical separation in pair with the eastern most ribbon of the early two ribbons. The potential field reconstruction based on the PFSS model showed a fan shaped magnetic configuration including fan-like field lines stemming from the unipolar spot and fanning out toward the background decayed field. This large-scale fan-like field overarched full active region, and the footpoints of fan-like field lines were co-spatial with the observed quasi-circular ribbon. From the NLFF magnetic field reconstruction, we confirmed the existence of a twisted flux rope structure in the bipolar spot group before the first M2.0 flare. Hard X-ray emission signatures were detected at the site of twisted flux rope during the pre-flare phase of the M2.0 flare. Based on the analysis of both two-ribbon structure and quasi-circular ribbon, we suggest that a tether-cutting reconnection between sheared arcade overarching the twisted flux rope embedded in a fan-like magnetic field may have triggered the first M2.0 flare, then secondary M2.6 flare was introduced by the fan-spine reconnection because of the interaction between the expanding field and the nearby quasi-null and formed the observed large-scale quasi-circular flare ribbon.

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Application of selective Epitaxial Growth of Silicon on MEMS Structure (실리콘 선택적 기상 성장을 이용한 마이크로 센서에 응용되는 구조물 제조법)

  • Pak, J.Jung-Ho;Kim, Jong-Kwan;Kim, Sang-Young;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1025-1027
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    • 1995
  • SEG(Selective Epitaxial Growth) and ELO(Epitaxial Lateral Growth) of Silicon offer new opportunities in the fabrication of MEMS(Micro Electro-Mechanical Systems) structures. SEG of silicon enables the stacking of junctions in addition to those resulting from the standard bipolar process and this properly was utilized for the fabrication of an improved-performance color sensor. When the crystalline growth takes place through the seed windows and proceeds over the dielectric, after reaching the surface, it form an ELO silicon layer and this ELO-Si can be modified into various structures for MEMS application such as cantilevers, beams, diaphragms.

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Pathological Pictures of Pasteurella Pneumonia in Swine (돈역성폐염(豚疫性肺炎)에 관한 병리학적연구(病理學的硏究))

  • Lim, Chang Hyeong
    • Korean Journal of Veterinary Research
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    • v.12 no.1
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    • pp.121-126
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    • 1972
  • The pneumonic lungs of 51 pigs, from which the presence of pasteurella organisms was confirmed by bipolar staining, were examined pathologically. The numbers of pigs in each age group were 22 (43.1%) in 3-4 month group, 20 (39.2%) in 1-2 month group, 7 (13.7%) in 5-6 month group, and 2 (4.0%) in group of more than one year. The lungs of 16 pigs which were regarded as pasteurella pneumonia without any other manifestations were studied pathogically. Grossly, the affected lungs showed pulmonary edema, lobular consolidation and interlobular edema. Pigs over 3 months of age frequently showed chronic condition in which the entire lobe was involved as confluent pneumonia. In such pneumonic lungs, infarction and focal necrosis of the lung parenchyma and deposition of fibrinous exudate on the pleura were encountered. Histologically, the alveolar spaces were filled with fibrinous and leukocytic exudates. The interlobular septae showed marked edema and fibrinous exudate. The process of organization was frequently observed in chronic cases.

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다결정 실리콘 Self-align에 의한 바이폴라 트랜지스터의 제작

  • Chae, Sang-Hun;Gu, Jin-Geun;Kim, Jae-Ryeon;Lee, Jin-Hyo
    • ETRI Journal
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    • v.7 no.4
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    • pp.11-14
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    • 1985
  • A polysilicon self-aligned bipolar n-p-n transistor structure is described, which can be used in high speed and high packing density LSI circuits The emitter of this transistor is separated less than $0.4\mum$ with base contact by polysilicon self-align technology. Through all the process, the active region of this device is not damaged. therefore a high performance device is obtained. Using the transistor with $3.0\mum$ design rules, a CML ring oscillator has per-gate minimum propagation delay time of 400 ps at 2.7 mW power consumption condition.

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Magnetic Sensitivity Improvement of 2-Dimensional Silicon Vertical Hall Device (2 차원 Si 종형 Hall 소자의 자기감도 개선)

  • Ryu, Ji-Goo
    • Journal of Sensor Science and Technology
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    • v.23 no.6
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    • pp.392-396
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    • 2014
  • The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

Numerical Simulation for the Aggregation of Charged Particles (하전입자의 응집성장에 대한 수치적 연구)

  • Park, Hyung-Ho;Kim, Sang-Soo;Chang, Hyuk-Sang
    • Proceedings of the KSME Conference
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    • 2001.06d
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    • pp.605-611
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    • 2001
  • A numerical technique for simulating the aggregation of charged particles was presented with a Brownian dynamic simulation in the free molecular regime. The Langevin equation was used for tracking each particle making up an aggregate. A periodic boundary condition was used for calculation of the aggregation process in each cell with 500 primary particles of 16 nm in diameter. We considered the thermal force and the electrostatic force for the calculation of the particle motion. The morphological shape of aggregates was described in terms of the fractal dimension. The fractal dimension for the uncharged aggregate was $D_{f}=1.761$. The fractal dimension changed slightly for the various amounts of bipolar charge. However, in case of unipolar charge, the fractal dimension decreased from 1.641 to 1.537 with the increase of the average number of charges on the particles from 0.2 to 0.3 in initial states.

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