• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.136-141
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• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• Korean Journal of Biological Psychiatry
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• v.12 no.2
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• pp.123-135
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• 2005

Objectives:EEG coherence could imply the connectivity between two different areas of the brain, which is known to be important in the pathophysiology of bipolar I disorder(BPD I) and schizophrenia. The authors investigated EEG coherence in patients with BPD I and schizophrenia to examine the connectivity of the neural circuit. Methods:EEGs were recorded in 15 schizophrenia and 14 bipolar disorder patients, and 14 age-matched normal control subjects from 16 electrodes with linked-ear reference. Spectral parameters and coherence were calculated for the alpha bandwidth(8-13Hz) by a multi-channel autoregressive model using 20 artifact-free 2-seconds epochs and the differences were compared among three groups by two different statistical methods;F-test and Kruskal-Wallis test. Furthermore, when there were significant differences among three groups, Scheffe's multiple comparison tests were provided and Jonckheere-Terpstra tests for the ordered alternative were given. Results:In the intra-hemispheric comparison, left frontal coherence was increased in order of control, BPD I and schizophrenia. In the inter-hemispheric comparison, 1) inter-prefrontal coherence in BPD I was signifi- cantly higher than in normal controls, and 2) inter-prefrontal coherence in schizophrenia was significantly lower than in controls. Conclusion:These results suggest that 1) both schizophrenia and BPD I are diseases having the abnormality of neural circuit connectivity in both frontal and prefrontal lobes, and 2) the abnormality is more severe in schizophrenia than in BPD I. Furthermore, the data support that a common pathogenetic process may reside in both schizophrenia and BPD I.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.31 no.2B
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• pp.187-192
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• 2011

Nitrate nitrogen is common contaminant in groundwater aquifers, its concentration is regulated many countries below 10 mg/L as N (As per WHO standards) in drinking water. An attempt was made to get optimal results for the treatment of nitrate nitrogen in groundwater by conducting various experiments by changing the experimental conditions for ZVI bipolar packed bed electrolytic cell. From the experimental results it is evident that the nitrate nitrogen removal is more effective when the reactor conditions are maintained in acidic range but when the acidic environment changes to alkaline due to the hydroxide formed during the process of ammonia nitrogen there by increasing the pH reducing the hydrogen ions required for reduction which leads to low effectiveness of the system. In the ZVI bipolar packed bed electrolytic cell, the packing ratio of 0.5~1:1 was found to be most effective for the treatment of nitrate nitrogen because ZVI particles are isolated and individual particle act like small electrode with low packing ratio. It is seen that formation of precipitate and acceleration of clogging incrementally for packing ratio more than 2:1, decreasing the nitrate nitrogen removal rate. When the voltage is increased it is seen that kinetics and current also increases but at the same time more electric power is consumed. In this experiment, the optimum voltage was determined to be 50V. At that time, nitrate nitrogen was removed by 94.9%.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.2
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• pp.227-237
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• 2002

A numerical technique for simulating the aggregation of charged particles was presented with a Brownian dynamic simulation in the free molecular regime. The Langevin equation was used for tracking each particle making up an aggregate. A periodic boundary condition was used for calculation of the aggregation process in each cell with 500 primary particles of 16 nm in diameter. We considered the thermal force and the electrostatic force for the calculation of the particle motion. The electrostatic force on a particle in the simulation cell was considered as a sum of electrostatic forces from other particles in the original cell and its replicate cells. We assumed that the electric charges accumulated on an aggregate were located on its center of mass, and aggregates were only charged with pre-charged primary particles. The morphological shape of aggregates was described in terms of the fractal dimension. In the simulation, the fractal dimension for the uncharged aggregate was D$\_$f/ = 1.761. The fractal dimension changed slightly for the various amounts of bipolar charge. However, in case of unipolar charge, the fractal dimension decreased from 1.641 to 1.537 with the increase of the average number of charges on the particles from 0.2 to 0.3 in initial states. In the bipolar charge state, the average sizes of aggregates were larger than that of the uncharged state in the early and middle stages of aggregation process, but were almost the same as the case of the uncharged state in the final stage. On the other hand, in the unipolar charge state, the average size of aggregates and the dispersion of particle volume decreased with the increasing of the charge quantities.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.1
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• pp.36-42
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• 2005

This study examined the feasibility of producing sulfuric acid and ammonia water from ammonium sulfate solution using two-compartment electrodialysis with a bipolar membrane (EDBM). Electrodialysis experiments were carried out with 20 wt% ammonium sulfate at different current densities and sulfuric acid concentrations in a concentrate compartment. The current efficiency increased with the current density from 25 to $100\;mA/cm^2$. Nevertheless, the efficiency was relatively low compared with that of general desalting electrodialysis, owing to the diffusion of sulfuric acid from the concentrate compartment to the diluate. The diffusion rate through the anion exchange membrane increased with the sulfuric acid concentration in the concentrate compartment, which decreased the current efficiency. Conversely, the electrical resistance decreased with increasing current density owing to the Joulian heat generated during water dissociation in the transition region of the bipolar membrane under a high electric field. From the experimental results, we concluded that operating at a higher current density is effective from the perspective of current efficiency and electrical resistance when producing sulfuric acid and ammonia water from ammonium sulfate using a two-compartment EDBM process. Further studies on the effects of increasing the sulfuric acid concentration on current efficiency are required to apply the EDBM process practically.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.4
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• pp.367-370
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• 2004

We fabricated SiGe BiCMOS devices, which are important for ultra high speed RF IC chips, by employing $0.35\mu{m}$ CMOS process. To meet with the requirement of low noise level with linear base leakage current at low VBE region, we try to minimize polysilicon/ silicon interface traps by optimizing capping silicon thickness and EDR(emitter drive-in RTA) temperature. We employed $200\AA$and $300\AA$-thick capping silicon, and varied the EDR process condition at temperature of $900-1000^\circ{C}$, and time of 0-30 sec at a given capping silicon thickness. We investigated current gain behavior at each process condition. We suggest that optimum EDR process condition would be $975^\circ{C}$-30 sec with $300\AA$-thick capping silicon for proposed $0.35\mu{m}$-SiGe HBT devices.

• Journal of Environmental Science International
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• v.9 no.4
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• pp.359-363
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• 2000

This research studied the characteristics and applicability of electrocoagulation using aluminium electrode for the color and COD removal in textile wastewater. Electrocoagulation reactor used two different electrode, Fe and Al, since in the general chemical wastewater treatment, aluminium and ferrous salts were used as coagulants. Aluminium electrode showed higher removal efficiency of color and COD than ferrous electrode did. The COD and color removal efficiency improved at the 0.192A/$dm^2$ current density. Thus, the electrocoagulation process with bipolar aluminium electrode showed better efficiency in the decolorization and COD removal rate of textile wastewater effluent than custom coagulants did.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.384-384
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• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1305-1308
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• 2003

A new technique is presented to construct a predictive model of plasma etch process. This was accomplished by combining a backpropagation neural network (BPNN) and a genetic algorithm (GA). The predictive model constructed in this way is referred to as a GA-BPNN. The GA played a role of controlling training factors simultaneously. The training factors to be optimized are the hidden neuron, training tolerance, initial weight magnitude, and two gradients of bipolar sigmoid and linear functions. Each etch response was optimized separately. The proposed scheme was evaluated with a set of experimental plasma etch data. The etch process was characterized by a $2^3$ full factorial experiment. The etch responses modeled are aluminum (A1) etch rate, silica profile angle, A1 selectivity, and dc bias. Additional test data were prepared to evaluate model appropriateness. The GA-BPNN was compared to a conventional BPNN. Compared to the BPNN, the GA-BPNN demonstrated an improvement of more than 20% for all etch responses. The improvement was significant in the case of A1 etch rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.187-190
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• 2000

We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.