• Journal of Power Electronics
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• v.12 no.1
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• pp.120-127
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• 2012

Fault diagnosis technique of electrical drives is becoming more and more important, since voltage fed converter system has become industrial standard in many applications. Many studies have been conducted an inverter fault diagnosis for induction motors. However, there are few researches about fault diagnosis of 3-phase ac/dc PWM (Pulse Width Modulation) converter compared to the dc/ ac inverter. The ac/dc converter is the opposite of dc/ac inverter at current flow. Also, inverter and converter have different current patterns under the same condition of IGBT (Insulated gate bipolar transistor) open switch fault. Therefore, it is difficult to apply intact diagnosis methods of inverter to the converter. This paper proposes modified fault detection methods for IGBT open switch fault in 3-phase ac/dc PWM converter by modifying established fault diagnostic methods for dc/ac inverters.

• Journal of Institute of Control, Robotics and Systems
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• v.20 no.7
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• pp.756-759
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• 2014

DC/DC converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. The converters can be applied in the regenerative braking of DC motors to return energy back to the supply, resulting in energy savings for the systems at periodic intervals. The fundamental converter studied here consists of an IGBT (Insulated Gate Bipolar mode Transistor), an inductor, a capacitor, a diode, a PWM-IC (Pulse Width Modulation Integrated Circuit) controller with oscillator, amplifier, and comparator. The PWM-IC is a core element and delivers the switching waveform to the gate of the IGBT in a stable manner. Display of the DC/DC converter output depends on the IGBT's changes in the threshold voltage and PWM-IC's pulse width. The simulation was conducted by PSIM software, and the hardware of the DC/DC converter was also implemented. It is necessary to study the fact that the output voltage depends on the duty rate of D, and to compare the output of experimental result with the theory and the simulation.

• Journal of Power Electronics
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• v.16 no.2
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• pp.553-563
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• 2016

This paper presents a digital hardware implementation of a real-time simulator for a multiphase drive using a field-programmable gate array (FPGA) device. The simulator was developed with a modular and hierarchical design using very high-speed integrated circuit hardware description language (VHDL). Hence, this simulator is flexible and portable. A state-space representation model suitable for FPGA implementations was proposed for a dual three-phase induction machine (DTPIM). The simulator also models a two-level 12-pulse insulated-gate bipolar transistor (IGBT)-based voltage-source converter (VSC), a pulse-width modulation scheme, and a measurement system. Real-time simulation outputs (stator currents and rotor speed) were validated under steady-state and transient conditions using as reference an experimental test bench based on a DTPIM with 15 kW-rated power. The accuracy of the proposed digital hardware implementation was evaluated according to the simulation and experimental results. Finally, statistical performance parameters were provided to analyze the efficiency of the proposed DTPIM hardware implementation method.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1169-1171
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• 2003

This paper presents a 1.6[kW]class single phase high power factor(HPF) pulse width modulation(PWM) boost rectifier featuring soft commutation of the active switches at zero current. It incorporates the most desirable properties of conventional PWM and soft switching resonant techniques. The input current shaping is achieved with average current mode control and continuous inductor current mode. This new PWM converter provides zero current turn on and turn off of the active switches, and it is suitable for high power applications employing insulated gate bipolar transistors(IGBT'S). The principle of operation, the theoretical analysis, a design example, and experimental results from laboratory prototype rated at 1.6[kW] with 400[Vdc] output voltage are presented. The measured efficiency and the power factor were 96.2[%] and 0.99[%], respectively, with an input current Total Harmonic Distortion(THD) equal to 3.94[%], for an input voltage with THD equal to 3.8[%], at rated load.

• The Journal of Korean Medicine
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• v.20 no.3 s.39
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• pp.36-44
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• 1999

Objectives: It has been well known that electroacupuncture(EA) has an analgesic effect and there is a pain control system in the central nervous system(CNS). The pain control system is composed of three major nuclei, which are periaqueductal gray(PAG), raphe nuclei, and the pain inhibitory complex located in the spinal cord. It has been suggested that the analgesic effect of EA might be the result of activation of the pain control system in the CNS. However, there may be a possibility that other nuclei are also involved in this pain modulation. Thus, we investigated whether the posterior intralaminar thalamic nuclei (PTIN) are involved in the pain modulation. Methods: To measure the level of pain, the jaw opening reflex (JOR) was used as a pain index. The magnitude of JOR is estimated by averaging the area of 10 successive responses. JOR was evoked by tooth-pulp stimulation with bipolar electrode carrying stimulus with the following parameters: intensity ranging from 420uA to 680ulA, 0.3ms duration of square pulse, and 0.5 Hz. Hapkog($LI_4$) and Taechung ($LR_3$) were the chosen acupoints. The Hapkog point was stimulated ipsilaterally at 5V, 3 Hz, for 15min in total, and the Taechung was stimulated at 2-3 V, 3 Hz, and for a total of 15 or 30 minutes. Different intensities of stimulation were given the PITN; one was given at $300{\mu}A$ and the other was at 500uA. The position stimulated in these nuclei by Paxinos Atlas was AP; from bregma $-4.0{\sim}-4.3mm,\;L; 0.5{\sim}1.8mm,\;D;\;4.8{\sim}6.3mm$. Results: The Hapkog point had a significant analgesic effect (P<0.05). However, the Taechung point had no effect. Both types of stimulation in the PITN did not reveal any analgesic effects. Conclusions: From these results, it was suggested that the posterior intralaminar thalamic nuclei are not involved in the modulation of pain.

• Journal of Information Display
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• v.13 no.2
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• pp.73-82
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• 2012

In this paper, a light-emitting diode (LED) backlight driver integrated circuit (IC) for medium-sized liquid crystal displays (LCDs) is proposed. In the proposed IC, a linear current regulator with matched internal resistors and an adaptive phase-shifted pulse-width modulation (PWM) dimming controller are also proposed to improve LED current uniformity and reliability. The double feedback loop control boost converter is used to achieve high power efficiency, fast transient characteristic, and high dimming frequency and resolution. The proposed IC was fabricated using the 0.35 ${\mu}m$ bipolar-CMOS-DMOS (BCD) process. The LED current uniformity and LED fault immunity of the proposed IC were verified through experiments. The measured power efficiency was 90%; the measured LED current uniformity, 97%; and the measured rising and falling times of the LED current, 86 and 7 ns, respectively. Due to the fast rising and falling characteristics, the proposed IC operates up to 39 kHz PWM dimming frequency, with an 8-bit dimming resolution. It was verified that the phase difference between the PWM dimming signals is changed adaptively when LED fault occurs. The experiment results showed that the proposed IC meets the requirements for the LED backlight driver IC for medium-sized LCDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.250-254
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• 2016

Currently, power conversion system which converts AC to DC Power is applied in domestic urban railway. The diode rectifier is used in most of them. However the diode rectifier can not control the output voltage and can not regenerate power as well. On the other hand, PWM (pulse width modulation) converter using IGBT (isolated gate bipolar transistor) can control output voltage, allowing it to reduce the output voltage drop. Moreover the Bi-directional conduction regenerates power which does not require additional device for power regeneration control. This paper compared the simulation results for the DC power supply system on both the diode rectifier and the PWM converter. Under the same load condition, simulation circuit for each power supply system was constructed with the PSIM (performance simulation and modeling tool) software. The load condition was set according to the resistance value of the currently operating impedance of light rail line, and the line impedance was set according to the distance of each substations. The train was set using a passive resistor. PI (proportional integral) controller was applied to regulate the output voltage. PSIM simulation was conducted to verify that the PWM Converter was more efficient than the diode rectifier in DC Traction power supply system.

• Journal of IKEEE
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• v.17 no.1
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• pp.77-82
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• 2013

In this paper, dc-dc buck converter controled by the peak current-mode pulse-width-modulation (PWM) presented. Based on the small-signal model, we propose the novel methods of the power stage and the systematic stability designs. To improve the reliability and performance, over-temperature and over-current protection circuits have been designed in the dc-dc converter systems. To prevent electrostatic An electrostatic discharge (ESD) protection circuit is proposed. The proposed dc-dc converter circuit exhibits low triggering voltage by using the gate-substrate biasing techniques. Throughout the circuit simulation, it confirms that the proposed ESD protection circuit has lower triggering voltage(4.1V) than that of conventional ggNMOS (8.2V). The circuit simulation is performed by Mathlab and HSPICE programs utilizing the 0.35um BCD (Bipolar-CMOS-DMOS) process parameters.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.