• ETRI Journal
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• 제37권5호
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• pp.951-960
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• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• 전기전자학회논문지
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• 제19권2호
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• pp.232-236
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• 2015

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.86.3-86
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• 2001

Hall effect sensor using 7um, 1.7 ohm-cm or 10um, 3.5 ohm-cm Bipolar process was successfully developed. The Hall sensor consists of various patterns, such as regular shapes, rectangles, diamond, hexagon and cross shapes to optimize offset voltage and sensitivity for proper applications. In order to measure offset voltage in chip scale the Agilent company´s 4156C and Nano-Voltage Meter were used and the best structure in offset voltage was finally selected by using ceramic package. The patterns appear to be the quadri-rectangular patterns entirely and three-parallelogram patterns. The measured offset voltages were found to be about 173-365uV. Meanwhile, in ...

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1025-1027
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• 1995

SEG(Selective Epitaxial Growth) and ELO(Epitaxial Lateral Growth) of Silicon offer new opportunities in the fabrication of MEMS(Micro Electro-Mechanical Systems) structures. SEG of silicon enables the stacking of junctions in addition to those resulting from the standard bipolar process and this properly was utilized for the fabrication of an improved-performance color sensor. When the crystalline growth takes place through the seed windows and proceeds over the dielectric, after reaching the surface, it form an ELO silicon layer and this ELO-Si can be modified into various structures for MEMS application such as cantilevers, beams, diaphragms.

• 센서학회지
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• 제11권2호
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• pp.84-92
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• 2002

국소 광적응 기능을 가지는 윤곽검출용 시각칩을 픽셀수 $32{\times}32$의 방사형 구조로 CMOS 공정기술을 이용하여 설계 및 제조하였다. 생체의 망막은 넓은 범위의 입력 광강도에 대해서 물체의 윤곽을 검출할 수 있다. 본 연구에서는 시세포, 수평세포, 쌍극세포로 이루어진 망막의 윤곽검출 기능을 모델링하여 윤곽검출용 인공시각칩을 설계하였다 국소 광적응을 위해 입력 광강도에 따라 수용야의 크기를 국소적으로 바뀌게 하였다. 아울러 단위셀을 방사형으로 배치함으로써 영상데이터의 양을 감소시킴과 동시에 칩의 중심부분으로 갈수록 해상도가 높아지도록 설계하였다. 설계된 칩은 $0.6\;{\mu}m$ double-poly triple-metal 표준 CMOS 공정기술을 이용하여 제조되었으며, HSPICE 시뮬레이션으로 성능을 최적화 시켰다.