• Title/Summary/Keyword: BioFET

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Characteristics of Protein G-modified BioFET

  • Sohn, Young-Soo
    • Journal of Sensor Science and Technology
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    • v.20 no.4
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    • pp.226-229
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    • 2011
  • Label-free detection of biomolecular interactions was performed using BioFET(Biologically sensitive Field-Effect Transistor) and SPR(Surface Plasmon Resonance). Qualitative information on the immobilization of an anti-IgG and antibody-antigen interaction was gained using the SPR analysis system. The BioFET was used to explore the pI value of the protein and to monitor biomolecular interactions which caused an effective charge change at the gate surface resulting in a drain current change. The results show that the BioFET can be a useful monitoring tool for biomolecular interactions and is complimentary to the SPR system.

Degradation of electrical characteristics in SOI nano-wire Bio-FET devices ($O_2$ plasma 표면 처리 공정에 의한 SOI nano-wire Bio-FET 소자의 전기적 특성 열화)

  • Oh, Se-Man;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.356-357
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    • 2008
  • The effects of $O_2$ plasma ashing process for surface treatment of nano-wire Bio-FET were investigated. In order to evaluate the plasma damage introduced by $O_2$ plasma ashing, a back-gate biasing method was developed and the electrical characteristics as a function of $O_2$ plasma power were measured. Serious degradations of electrical characteristics of nano-wire Bio-FET were observed when the plasma power is higher than 50 W. For curing the plasma damages, a forming gas anneal (2 %, $H_2/N_2$) was carried out at $400^{\circ}C$. As a result, the electrical characteristics of nano-wire Bio-FET were considerably recovered.

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Field Effect Transistors for Biomedical Application (전계효과트랜지스터의 생명공학 응용)

  • Sohn, Young-Soo
    • Applied Chemistry for Engineering
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    • v.24 no.1
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    • pp.1-9
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    • 2013
  • As the medical paradigm is changing from disease treatment to disease prevention and an early diagonosis, the demand to develop techniques for the detection of minute concentrations of biomolecules is increasing. Among the various techniques to sense the minute concentration of biomolecules, the biosensors utilizing the matured semiconductor techniques are presented here. To understand such biosensors, the structure and working principle of a MOSFET (Metal-oxide-semiconductor field-effect transistor) which is the basic semiconductor device is firstly introduced, and then the ISFET (Ion sensitive FET), BioFET (Biologically modified FET), Nanowire FET, and IFET (Ionic FET) are introduced, and their applications to biomedical fields are discussed.

Applications of Field-Effect Transistor (FET)-Type Biosensors

  • Park, Jeho;Nguyen, Hoang Hiep;Woubit, Abdela;Kim, Moonil
    • Applied Science and Convergence Technology
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    • v.23 no.2
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    • pp.61-71
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    • 2014
  • A field-effect transistor (FET) is one of the most commonly used semiconductor devices. Recently, increasing interest has been given to FET-based biosensors owing totheir outstanding benefits, which are likely to include a greater signal-to-noise ratio (SNR), fast measurement capabilities, and compact or portable instrumentation. Thus far, a number of FET-based biosensors have been developed to study biomolecular interactions, which are the key drivers of biological responses in in vitro or in vivo systems. In this review, the detection principles and characteristics of FET devices are described. In addition, biological applications of FET-type biosensors and the Debye length limitation are discussed.

Electrical sensing of SOI nano-wire BioFET by using back-gate bias (Back-gate bias를 이용한 SOI nano-wire BioFET의 electrical sensing)

  • Jung, Myung-Ho;Ahn, Chang-Geun;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.354-355
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    • 2008
  • The sensitivity and sensing margin of SOI(silicon on insulator) nano-wire BioFET(field effect transistor) were investigated by using back-gate bias. The channel conductance modulation was affected by doping concentration, channel length and channel width. In order to obtain high sensitivity and large sensing margin, low doping concentration, long channel and narrow width are required. We confirmed that the electrical sensing by back-gate bias is effective method for evaluation and optimization of bio-sensor.

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One-dimensional Nanomaterials for Field Effect Transistor (FET) Type Biosensor Applications

  • Lee, Min-Gun;Lucero, Antonio;Kim, Ji-Young
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.165-170
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    • 2012
  • One-dimensional, nanomaterial field effect transistors (FET) are promising sensors for bio-molecule detection applications. In this paper, we review fabrication and characteristics of 1-D nanomaterial FET type biosensors. Materials such as single wall carbon nanotubes, Si nanowires, metal oxide nanowires and nanotubes, and conducting polymer nanowires have been widely investigated for biosensors, because of their high sensitivity to bio-substances, with some capable of detecting a single biomolecule. In particular, we focus on three important aspects of biosensors: alignment of nanomaterials for biosensors, surface modification of the nanostructures, and electrical detection mechanism of the 1-D nanomaterial sensors.

Degradation of electrical characteristics in Bio-FET devices by O2 plasma surface treatment and improving by heat treatment (O2 플라즈마 표면처리에 의한 Bio-FET 소자의 특성 열화 및 후속 열처리에 의한 특성 개선)

  • Oh, Se-Man;Jung, Myung-Ho;Cho, Won-Ju
    • Journal of the Korean Vacuum Society
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    • v.17 no.3
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    • pp.199-203
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    • 2008
  • The effects of surface treatment by $O_2$ plasma on the Bio-FETs were investigated by using the pseudo-MOSFETs on the SOI substrates. After a surface treatment by $O_2$ plasma with different RF powers, the current-voltage and field effect mobility of pseudo-MOSFETs were measured by applying back gate bias. The subthreshold characteristics of pseudo-MOSFETs were significantly degraded with increase of RF power. Additionally, a forming gas anneal process in 2 % diluted $H_2/N_2$ ambient was developed to recover the plasma process induced surface damages. A considerable improvement of the subthreshold characteristics was achieved by the forming gas anneal. Therefore, it is concluded that the pseudo-MOSFETs are a powerful tool for monitoring the surface treatment of Bio-FETs and the forming gas anneal process is effective for improving the electrical characteristics of Bio-FETs.

CUDA-based Parallel Bi-Conjugate Gradient Matrix Solver for BioFET Simulation (BioFET 시뮬레이션을 위한 CUDA 기반 병렬 Bi-CG 행렬 해법)

  • Park, Tae-Jung;Woo, Jun-Myung;Kim, Chang-Hun
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.48 no.1
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    • pp.90-100
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    • 2011
  • We present a parallel bi-conjugate gradient (Bi-CG) matrix solver for large scale Bio-FET simulations based on recent graphics processing units (GPUs) which can realize a large-scale parallel processing with very low cost. The proposed method is focused on solving the Poisson equation in a parallel way, which requires massive computational resources in not only semiconductor simulation, but also other various fields including computational fluid dynamics and heat transfer simulations. As a result, our solver is around 30 times faster than those with traditional methods based on single core CPU systems in solving the Possion equation in a 3D FDM (Finite Difference Method) scheme. The proposed method is implemented and tested based on NVIDIA's CUDA (Compute Unified Device Architecture) environment which enables general purpose parallel processing in GPUs. Unlike other similar GPU-based approaches which apply usually 32-bit single-precision floating point arithmetics, we use 64-bit double-precision operations for better convergence. Applications on the CUDA platform are rather easy to implement but very hard to get optimized performances. In this regard, we also discuss the optimization strategy of the proposed method.

Easy Detection of Amyloid β-Protein Using Photo-Sensitive Field Effect

  • Kim, Kwan-Soo;Ju, Jong-Il;Song, Ki-Bong
    • Journal of Sensor Science and Technology
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    • v.21 no.5
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    • pp.339-344
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    • 2012
  • This article describes a novel method for the detection of amyloid-${\beta}$($A{\beta}$) peptide that utilizes a photo-sensitive field-effect transistor (p-FET). According to a recent study, $A{\beta}$ protein has been known to play a central role in the pathogenesis of Alzheimer's disease (AD). Accordingly, we investigated the variation of photo current generated from p-FET with and without intracellular magnetic beads conjugated with $A{\beta}$ peptides, which are placed on the p-FET sensing areas. The decrease of photo current was observed due to the presence of the magnetic beads on the channel region. Moreover, a similar characteristic was shown when the Raw 264 cells take in magnetic beads treated with $A{\beta}$ peptide. This means that it is possible to simply detect a certain protein using magnetic beads and a p-FET device. Therefore, in this paper, we suggest that our method could detect tiny amounts of $A{\beta}$ for early diagnosis of AD using the p-FET devices.