• Journal of the Institute of Electronics Engineers of Korea SP
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• v.41 no.1
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• pp.29-36
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• 2004

Generally, wavelet coefficients can be classified into two categories: large coefficients with much signal information and small coefficients with little signal component. This statistical characteristic of wavelet coefficient is approximated to Gaussian mixture model and efficiently applied to noise reduction. In this paper, we propose an image denoising method using mixture modeling of wavelet coefficients. Binary mask value is generated by proper threshold which classifies wavelet coefficients into two categories. Information of binary mask value is used to remove image noise. We also develope an enhancement method of mask value using morphological filter, and apply it to image denoising for improvement of the proposed method. Simulation results shows the proposed method have better PSNRs than those of the state of art denoising methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.489-492
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• 2001

We studied a method to use a variable discrete random phase mask in 2-D binary data representation for efficient holographic data storage. The variable phase mask is realized by use of a twisted nematic liquid crystal display.

• Journal of Broadcast Engineering
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• v.18 no.2
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• pp.311-318
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• 2013

This paper deals with a noise reduction algorithm which uses the binary masking in the time-frequency domain. To improve speech intelligibility in noise, noise-masked speech is decomposed into time-frequency units and mask "0" is assigned to masker-dominant region removing time-frequency units where noise is dominant compared to speech. In the previous research, Gaussian mixture models were used to classify the speech-dominant region and noise-dominant region which correspond to mask "1" and mask "0", respectively. In each frequency band, data were collected and trained to build the Gaussian mixture models and detection procedure is performed to the test data where each time-frequency unit belongs to speech-dominant region or noise-dominant region. In this paper, we consider the correlation of masks in the frequency domain and propose a post-processing method which exploits the Viterbi algorithm.

• Journal of Korea Multimedia Society
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• v.19 no.7
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• pp.1127-1136
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• 2016

Speech enhancement algorithm plays an important role in numerous speech signal processing applications. Over the last few decades, many algorithms have been studied for speech enhancement. The algorithms are based on spectral subtraction, Wiener filter, and subspace method etc. They have good performance of speech enhancement, but the performance can be deteriorated in specific noises or low SNR environment. In this paper, a new speech enhancement algorithms are proposed based on adaptive noise canceller. And the proposed algorithm improved performance of adaptive noise cancelling using 2-D binary mask. From objective experimental index, it is confirmed that the proposed algorithm is useful and has better performance than recently proposed speech enhancement algorithms.

• Journal of Korea Multimedia Society
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• v.23 no.1
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• pp.8-14
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• 2020

For a reliable fingerprinting system, improving fingerprint matching accuracy is crucial. In this paper, we try to improve a binary image fingerprint matching performance by utilizing auxiliary information, power mask, which is obtained while constructing fingerprint DB. The power mask is an expected robustness of each fingerprint bit. A caveat of the power mask is the increased storage cost of the fingerprint DB. This paper mitigates the problem by reducing the size of the power mask utilizing spatial correlation of an image. Experiments on a publicly-available image dataset confirmed that the power mask is effective in improving fingerprint matching accuracy.

• Journal of Digital Convergence
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• v.11 no.4
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• pp.259-266
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• 2013

Binary connected-components labeling, which is widely used in the field of the pattern recognition, has been researched for a long time as one of the basic image processing techniques. Two-scan algorithm has been mainly used in the researches of the connected-components labeling. Recently, for the first scan in the two-scan algorithm, block-based labeling approaches have been used and reported as the fastest methods. In this paper, a new efficient scan mask for connected-components labeling with a block-based labeling approach is proposed. Labeling with the new pixel-based scan mask is more efficient than any other existing method. The results of the experiments show that the proposed method is faster than the existing fastest method.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.32-37
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• 2016

Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.6-11
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• 2001

We studied the feasibility of optical lithography for the critical layers of 0.12${\mu}{\textrm}{m}$ DRAM assuming ArF excimer laser as a light source. To enhance the fidelity of aerial image and process margin, Phase shift mask (PSM) patterns as well as binary mask patterns are corrected with in-house developed Optical Proximity Correction (OPC) software. As the result, w found that the aerial image of critical layers of DRAM cell with 0.12${\mu}{\textrm}{m}$ design rule could not be reproduced with binary masks. But if we use PSM or optical proximity corrected PSM, the fidelity of aerial image ,resolution and process margin are so much enhanced that they could be processed with optical lithography.