• Journal of the Korean Data and Information Science Society
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• v.6 no.1
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• pp.73-83
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• 1995

We construct the approximate bootstrap confidence intervals for reliability (R) when the distributions of strength and stress are both normal. Also we propose percentile, bias correct (BC), bias correct acceleration (BCa), and percentile-t intervals for R. We compare with the accuracy of the proposed bootstrap confidence intervals and classical confidence interval based on asymptotic normal distribution through Monte Carlo simulation. Results indicate that the confidence intervals by bootstrap method work better than classical confidence interval. In particular, confidence intervals by BC and BCa method work well for small sample and/or large value of true reliability.

• Journal of Information Display
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• v.13 no.1
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• pp.51-54
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• 2012

In this study, the bias-temperature stress and current-temperature stress induced by the electrical stabilities of half-Corbino hydrogenated-amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with different gate electrode geometries fabricated on the same substrate were examined. The influence of the gate pattern on the threshold voltage shift of the half-Corbino a-Si:H TFTs is discussed in this paper. The results indicate that the half-Corbino a-Si:H TFT with a patterned gate electrode has enhanced power efficiency and improved aperture ratio when compared with the half-Corbino a-Si:H TFT with an unpatterned gate electrode and the same source/drain electrode geometry.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.05a
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• pp.554-558
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• 2002

A magnetostrictive sensor is used to measure stress waves propagating in a ferromagnetic cylinder without physical contact. The performance of a magnetostrictive sensor is affected most significantly by the bias magnetic field applied around the measurement location. The goal of this paper is to carry out the topology optimization of the bias magnet and yoke assembly to maximize the sensor output for traveling bending waves. We will use the multi-resolution topology optimization strategy to find the assembly of the bias magnet and the yoke that is easy to realize. The effectiveness of the present design is confirmed by an actual measurement of the sensor signal with the proposed bias magnet and yoke configuration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.181-185
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• 2003

Influence of post gate oxidation anneal on Negative Bias Temperature Instability (NBTI) of PMOSFE has been investigated. At oxidation anneal temperature raised above 950$^{\circ}$C, a significant improvement of NBTI was observed which enables to reduce PMO V$\_$th/ shift occurred during a Bias Temperature (BT) stress. The high temperature anneal appears to suppress charge generations inside the gate oxide and near the silicon oxide interface during the BT stress. By measuring band-to-band tunneling currents and subthreshold slopes, reduction of oxide trapped charges and interface states at the high temperature oxidation anneal was confirmed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.367-372
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• 1999

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshod voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate only and the gate and drain bias stressing. Also, we have quantitatively analyzed the degradation phenomena by analytical method. We have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the channel region and $poly-Si/SiO_2$ interface is prevalent in gate and drain bias stressed device.

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.193-197
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• 2003

To materialize the magnetoelastic devices, such as a highly functional sensor and a signal processing device, using the Fe base amorphous film which has both excellent soft magnetic and magnetostrictive properties, in this study, a new method to control the magnetic anisotropy of a highly magnetostrictive film using bias stress has been proposed and tested. The film pattern, which was stressed by its substrate bending, was subjected to annealing for relieving its stress. Successively, the compressive stress occurred by flattening the substrate was formed in the pattern. With the introduction of the residual compressive stress, the magnetization of the film pattern was aligned in the transverse direction through magnetoelasic coupling. The magnetic domain structure and magnetization curve of the film pattern of which magnetic anisotropy was controlled by the proposed method were presented to verify the availability of the method.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.769-772
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• 2014

The device reliability in amorphous InGaZnO under NBS(Negative Bias Stress) and hot carrier stress with different gate overlap has been characterized. Amorphous InGaZnO thin film transistor has been measured. and is channel $width=104{\mu}m$, $length=10{\mu}m$ with gate overlap $length=0,1,2,3{\mu}m$. The device reliability has been analyzed by I-V characteristics. From the experiment results, threshold voltage variation has been increased with increasing of the gate overlap length after hot carrier stress. Also, threshold voltage variation has been decreased and Hump Effect has been observed later with increasing of the gate overlap length after NBS.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.154-154
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• 2013

In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.

• The Journal of Industrial Distribution & Business
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• v.13 no.8
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• pp.1-7
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• 2022

Purpose: The present study concentrates on the issues that affected the employees directly and acted as stress factors. These stress factors affect how the employees perform while undertaking their duties. Furthermore, this study evaluated how the involvement of the corporate counsel affected the company by enhancing the productivity of the employees. Research design, data and methodology: The research design of this research is a literature content analysis and method for data handling should be described, and the resultant combination of the studies should include the consistency measures for every meta-analysis. Specify any risk assessment of bias that may impact the cumulative evidence, such as the publication bias and the selective reporting within studies. Results: The finding shows that change in the location of employees' organizational restructuring and the introduction of new technologies also contributed to significant organizational stress factors. These results show a substantial correlation between the magnitude of the adjustments' effects on employees' performance. Conclusions: The current study strongly concludes that counselors, through their prowess, can analyze and evaluate the stress factors that are evident among the employees and in the organization. Some of these factors may be office layout, organizational codes of ethics, organization rules, and employees' personal challenges.

• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.121-126
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• 2002

WC/C multilayered films were deposited by arc ion plating and magnetron sputter hybrid system with various $C_2$H$_2$ flow rates and bias voltages. The coatings have been characterized with respect to their chemical composition (Glow Discharge Optical Emission Spectroscopy), hardness(Knoop micro-hardness), residual stress(Laser beam bending) and friction coefficient(Ball on disc type wear test). Deposition rate, microhardness and residual stress of WC/C films were observed to increase with increasing the $C_2$$H_2$ flow rates. The highest hardness and residual stress were measured to be 26.5 GPa and 1.1GPa for, WC/C film deposited at substrate bias of -100V. WC/C multilayered film was obtained very low friction coefficient(~0.1).