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http://dx.doi.org/10.4283/JKMS.2003.13.5.193

Anisotropy Control of Highly Magnetostrictive Films by Bias Stress  

Shin, Kwang-Ho (경성대학교 멀티미디어공학과)
Kim, Young-Hak (부경대학교 전기공학과)
Park, Kyung-Il (동아대학교 전기공학과)
Sa-Gong, Geon (동아대학교 전기공학과)
Abstract
To materialize the magnetoelastic devices, such as a highly functional sensor and a signal processing device, using the Fe base amorphous film which has both excellent soft magnetic and magnetostrictive properties, in this study, a new method to control the magnetic anisotropy of a highly magnetostrictive film using bias stress has been proposed and tested. The film pattern, which was stressed by its substrate bending, was subjected to annealing for relieving its stress. Successively, the compressive stress occurred by flattening the substrate was formed in the pattern. With the introduction of the residual compressive stress, the magnetization of the film pattern was aligned in the transverse direction through magnetoelasic coupling. The magnetic domain structure and magnetization curve of the film pattern of which magnetic anisotropy was controlled by the proposed method were presented to verify the availability of the method.
Keywords
FeCoSiB amorphous film; magnetic anisotropy; bias stress; magnetoelasic coupling;
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