• 제목/요약/키워드: Bias-stress

검색결과 291건 처리시간 0.025초

Interval Estimations for Reliablility in Stress-Strength Model by Bootstrap Method

  • Lee, In-Suk;Cho, Jang-Sik
    • Journal of the Korean Data and Information Science Society
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    • 제6권1호
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    • pp.73-83
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    • 1995
  • We construct the approximate bootstrap confidence intervals for reliability (R) when the distributions of strength and stress are both normal. Also we propose percentile, bias correct (BC), bias correct acceleration (BCa), and percentile-t intervals for R. We compare with the accuracy of the proposed bootstrap confidence intervals and classical confidence interval based on asymptotic normal distribution through Monte Carlo simulation. Results indicate that the confidence intervals by bootstrap method work better than classical confidence interval. In particular, confidence intervals by BC and BCa method work well for small sample and/or large value of true reliability.

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Electrical stabilities of half-Corbino thin-film transistors with different gate geometries

  • Jung, Hyun-Seung;Choi, Keun-Yeong;Lee, Ho-Jin
    • Journal of Information Display
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    • 제13권1호
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    • pp.51-54
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    • 2012
  • In this study, the bias-temperature stress and current-temperature stress induced by the electrical stabilities of half-Corbino hydrogenated-amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with different gate electrode geometries fabricated on the same substrate were examined. The influence of the gate pattern on the threshold voltage shift of the half-Corbino a-Si:H TFTs is discussed in this paper. The results indicate that the half-Corbino a-Si:H TFT with a patterned gate electrode has enhanced power efficiency and improved aperture ratio when compared with the half-Corbino a-Si:H TFT with an unpatterned gate electrode and the same source/drain electrode geometry.

마그네토스트릭션 센서 성능 향상을 위한 바이어스 자기장의 위상 최적설계 (Topology Optimization of a Bias Magnetic Field for the Performance Improvement of a Magnetostrictive Sensor)

  • Cho, Seung-Hyun;Kim, Youngkyu;Kim, Yoon-Young
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2002년도 춘계학술대회논문집
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    • pp.554-558
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    • 2002
  • A magnetostrictive sensor is used to measure stress waves propagating in a ferromagnetic cylinder without physical contact. The performance of a magnetostrictive sensor is affected most significantly by the bias magnetic field applied around the measurement location. The goal of this paper is to carry out the topology optimization of the bias magnet and yoke assembly to maximize the sensor output for traveling bending waves. We will use the multi-resolution topology optimization strategy to find the assembly of the bias magnet and the yoke that is easy to realize. The effectiveness of the present design is confirmed by an actual measurement of the sensor signal with the proposed bias magnet and yoke configuration.

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게이트 산화막 어닐링을 이용한 서브 마이크론 PMOS 트랜지스터의 NBTI 향상 (Impact of Post Gate Oxidation Anneal on Negative Bias Temperature Instability of Deep Submicron PMOSFETs)

  • 김영민
    • 한국전기전자재료학회논문지
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    • 제16권3호
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    • pp.181-185
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    • 2003
  • Influence of post gate oxidation anneal on Negative Bias Temperature Instability (NBTI) of PMOSFE has been investigated. At oxidation anneal temperature raised above 950$^{\circ}$C, a significant improvement of NBTI was observed which enables to reduce PMO V$\_$th/ shift occurred during a Bias Temperature (BT) stress. The high temperature anneal appears to suppress charge generations inside the gate oxide and near the silicon oxide interface during the BT stress. By measuring band-to-band tunneling currents and subthreshold slopes, reduction of oxide trapped charges and interface states at the high temperature oxidation anneal was confirmed.

다결정 실리콘 박막 트랜지스터의 수소화에 따른 전기적 스트레스의 영향 (Effects of Electrical Stress on Polysilicon TFTs with Hydrogen Passivation)

  • 황성수;황한욱;김용상
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권5호
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    • pp.367-372
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    • 1999
  • We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshod voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate only and the gate and drain bias stressing. Also, we have quantitatively analyzed the degradation phenomena by analytical method. We have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the channel region and $poly-Si/SiO_2$ interface is prevalent in gate and drain bias stressed device.

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바이어스 응력에 의한 고자왜 아몰퍼스 박막의 자기이방성 제어 (Anisotropy Control of Highly Magnetostrictive Films by Bias Stress)

  • 신광호;김영학;박경일;사공건
    • 한국자기학회지
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    • 제13권5호
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    • pp.193-197
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    • 2003
  • 우수한 연자성 특성과 자왜 특성을 동시에 나타내는 철계 아몰퍼스 박막을 이용한 고기능성 센서나 신호처리소자와 같은 자기탄성 디바이스를 구현하기 위해서는 자기이방성의 제어가 필요하다. 본 연구에서는 철계 아몰퍼스 박막의 자기이방성을 제어하기 위해서 바이어스 응력을 이용한 자기이방성제어 방법을 제안하였다. 제안한 방법은 박막의 기판을 굴곡시킨 상태에서 열처리를 실시하여 박막의 응력을 해소하고, 열처리 후 박막기판의 형상을 원상으로 복귀시켜서 박막에 바이어스 응력이 인가되도록 하고, 이 응력에 의해서 박막의 자기이방성이 제어되도록 하는 것이다. 응력을 이용하여 자기이방성을 제어한 박막패턴을 자구의 관찰과 자화곡선의 평가를 고찰한 결과, 제안한 자기이방성 제어방법이 유용함을 알 수 있었다.

비정질 InGaZnO 박막트랜지스터에서 Gate overlap 길이와 소자신뢰도 관계 연구 (Study of relation between gate overlap length and device reliability in amorphous InGaZnO thin film transistors)

  • 문영선;김건영;정진용;김대현;박종태
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2014년도 추계학술대회
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    • pp.769-772
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    • 2014
  • 비정질 InGaZnO 박막트랜지스터의 Gate Overlap 길이에 따른 NBS(Negative Bias Stress) 및 hot carrier 스트레스 후 시간별 문턱전압의 변화에 의한 소자신뢰도를 분석하였다. 측정에 사용된 소자는 비정질 InGaZnO TFT이며 채널 폭 $W=104{\mu}m$, 게이트 길이 $L=10{\mu}m$이며 Gate Overlap 길이는 $0,1,2,3{\mu}m$를 사용하였다. 소자 신뢰도는 전류-전압을 측정하여 분석하였다. 측정 결과, hot carrier 스트레스 후 Gate Overlap 길이가 증가할수록 문턱전압의 변화가 증가하였다. 또한, NBS 후에는 Gate Overlap 길이가 증가할수록 문턱전압의 변화가 감소하였고 장시간 스트레스 후에 hump가 발생하였다.

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The effect of negative bias stress stability in high mobility In-Ga-O TFTs

  • Jo, Kwang-Min;Sung, Sang-Yun;You, Jae-Lok;Kim, Se-Yun;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2013년도 춘계학술대회 논문집
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    • pp.154-154
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    • 2013
  • In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.

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The Significant Roles of Corporate Counselors to Reduce Employee Stress for Enhancing their Performance

  • PARK, Joo-Young;KIM, Seong-Gon
    • 산경연구논집
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    • 제13권8호
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    • pp.1-7
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    • 2022
  • Purpose: The present study concentrates on the issues that affected the employees directly and acted as stress factors. These stress factors affect how the employees perform while undertaking their duties. Furthermore, this study evaluated how the involvement of the corporate counsel affected the company by enhancing the productivity of the employees. Research design, data and methodology: The research design of this research is a literature content analysis and method for data handling should be described, and the resultant combination of the studies should include the consistency measures for every meta-analysis. Specify any risk assessment of bias that may impact the cumulative evidence, such as the publication bias and the selective reporting within studies. Results: The finding shows that change in the location of employees' organizational restructuring and the introduction of new technologies also contributed to significant organizational stress factors. These results show a substantial correlation between the magnitude of the adjustments' effects on employees' performance. Conclusions: The current study strongly concludes that counselors, through their prowess, can analyze and evaluate the stress factors that are evident among the employees and in the organization. Some of these factors may be office layout, organizational codes of ethics, organization rules, and employees' personal challenges.

WC/C 다층박막의 합성 및 기계적 특성에 관한 연구 (A study on the synthesis and mechanical properties of WC/C multilayered films)

  • 명현식;한전건
    • 한국표면공학회지
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    • 제35권3호
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    • pp.121-126
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    • 2002
  • WC/C multilayered films were deposited by arc ion plating and magnetron sputter hybrid system with various $C_2$H$_2$ flow rates and bias voltages. The coatings have been characterized with respect to their chemical composition (Glow Discharge Optical Emission Spectroscopy), hardness(Knoop micro-hardness), residual stress(Laser beam bending) and friction coefficient(Ball on disc type wear test). Deposition rate, microhardness and residual stress of WC/C films were observed to increase with increasing the $C_2$$H_2$ flow rates. The highest hardness and residual stress were measured to be 26.5 GPa and 1.1GPa for, WC/C film deposited at substrate bias of -100V. WC/C multilayered film was obtained very low friction coefficient(~0.1).