• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.2
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• pp.76-80
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• 2007

In this paper, the PAE (Power Added Efficiency) and the linearity of the Doherty amplifier has been improved using dual bias control and PBG (Photonic BandGap) structure. The PBG structure has used to implement on output matching circuit and dual bias control has applied to improve the PAE of the Doherty amplifier at a low input level by applying it to a carrier amplifier. The Doherty amplifier using the proposed structure has improved PAE by 8% and 5dBc of IMD3 (3rd Inter-Modulation Distortion) compared with those of the conventional class AB amplifier. In addition to, it has been evident that the designed the structure has showed more than a 30% increase in PAE for flatness over all input power level.

• Journal of Institute of Control, Robotics and Systems
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• v.18 no.9
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• pp.871-877
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• 2012

An error analysis of PPP (Precise Point Positioning) using IF (Ionosphere Free) combination is given in this paper. It is shown that the performance of the ordinary model with positions, clock bias, integer ambiguities and ionosphere delay as unknowns is equivalent to that of an ionosphere difference combination where ionosphere delay is cancelled out. Furthermore, it is shown that IF combination is an ionosphere difference combination but not unique. It is also proved that all difference models show same performances. The error analysis evaluated with a hardware simulator and real measurements show that the ionosphere delay is effectively eliminated by IF combination or equivalently by the ionosphere difference combination. However, if bias errors such as troposphere, clock bias or multipath are included in the measurements, the performance of the IF combination is degraded because the bias errors are amplified by the ionosphere difference operation.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.84-87
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• 2006

본 연구는 Current Mirror에 있어서 Active Current Bias에 관하여 기술하였다. Current mirror에서 Active Current Bias를 걸어주는 보편적인 방법은 Current Bias단에 저항을 연결하여 저항값을 조절함으로 해서 Current를 제어하는 방법을 사용한다. Reference 전류를 제어하는데 있어 새로이 제안하는 것은 Flyback Converter를 이용하여 Acitve Current Bias를 제어 하려 한다. 트랜지스터를 이용하여 Current Mirror Circuit를 구성하고 Current Bias 측에 Flyback Converter Circuit을 연결한다. Flyback Converter의 PWM의 Duty Ratio를 조절함으로 해서 전류를 제어하는 특징을 이용하여 Active Current Bias를 제어한다.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.9 no.4
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• pp.145-153
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• 2014

This study examined the linkage between positive cognitive bias and entrepreneurial intention. Self-enhancement, unrealistic optimism, and illusion of control have been collectively referred as positive cognitive bias. We examined the effects of positive cognitive bias on attitudes toward success and failure. And we also examined the effect of attitudes toward success and failure on entrepreneurial intension. This study investigated these relationships using 240 high school students. The result of analysis indicated that the self-enhancement bias and unrealistic optimism bias had positive effects on attitude toward failure, but it had not any effect on attitude toward success. The illusion of control bias has positive effects on attitude toward success, but it had not any effect on attitude toward failure. The attitudes toward success and failure had positive effect on entrepreneurial intension. Then results of this study suggests that the cognitive biases showed a role of antecedents of attitudes toward success and failure. Finally, this study concluded with a discussion of the implications of the research findings and directions for future research.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.128-136
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• 2006

In this paper, design and implement 50W Doherty power amplifiers for 3GPP repeater and base station transceiver system. Efficiency improvement and high power property of ideal Doherty power amplifier is distinguishable; however bias control for implementation of Doherty(GDCHD) amplifier is difficult. To solve the problem, therefore, GDCHD(Gate and Drain Control Hybrid Doherty) power amplifier is embodied to drain bias adjustment circuit to Doherty power amplifier with gate bias adjustment circuit. Experiment result shows that $2.11{\sim}2.17\;GHz$, 3GPP operating frequency band, with 57.03 dB gain, PEP output is 50.30 dBm, W-CDMA average power is 47.01 dBm, and -40.45 dBc ACLR characteristic in 5MHz offset frequency band. Each of the parameter satisfied amplifier specification which we want to design. Especially, GDCHD power amplifier shows proper efficiency performance improvement in uniformity ACLR than Doherty power amplifier.

• Journal of Institute of Control, Robotics and Systems
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• v.7 no.10
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• pp.874-881
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• 2001

By showing the existence of the ARE solution and the convergence property of the DRE solution, this paper proves that a Kalman filter for the linear system with the unobservable bias is stable. It is also shown that the Kalman filter has a biased steady state estimation error whose covariance is affected mainly by the unobservable bias. Finally, the results are illustrated through a 2nd order system example including the inertial navigation system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.883-890
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• 2005

In this paper, the established model of NBTI (Negative Bias Temperature Instability) mechanism was reviewed. Based on this mechanism, then, the influence of nitrogen was discussed among other processes. A constant concentration of nitrogen exists inside $SiO_2$ in order to prevent boron from diffusing and to increase dielectric constant. It was shown that NBTI improvement was achieved by controlling nitrogen profile. It was supposed that the existence of low activation energy of Si-N bonds at $Si-SiO_2$ interface attributes the improvement by making hydrogen prevent interface traps. It was also shown that improvement of NBTI can be achieved by more effective control of nitrogen profile. It was supposed that the maximum control of nitrogen profile can be achieved by DPN (Decoupled Plasma Nitridation) process.

• Journal of Institute of Control, Robotics and Systems
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• v.4 no.1
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• pp.56-61
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• 1998

The velocity measurement error in the velocity-aided SDINS on the maneuvering vehicle is unavoidable and degrades the performance of the SDINS. The characteristics of the velocity measurement error can be modeled as a random bias. This paper proposes a new method for estimating the velocity measurement error in the SDINS. The generalized likelihood ratio test is used for detecting the error and a modified separate-bias Kalman filter in the feedback configuration is suggested for estimating the magnitude of the velocity measurement error.

• Journal of Institute of Control, Robotics and Systems
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• v.13 no.12
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• pp.1243-1251
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• 2007

In this paper a study on the simplified observability analysis of GPS/INS is introduced. Errors for the position, velocity, attitude, gyro and accelerometer biases, and lever arm between GPS antenna and inertial sensors are considered in the observablity analysis. From the error dynamics model in which relatively small terms are neglected, simple observability conditions are obtained such that the observability of GPS/INS is determined by the test on the attutude, gyro bias, and lever arm. Unobservable errors for the position, velocity, and accelerometer bias are determined by those for the attitude, gyro bias, and lever arm. The simplified observability conditions are applied to a constant speed horizontal motion. It is shown that there are seven unobservable modes for the motion including the vertical component of gyro bias. The analytic observability analysis results are confirmed with a covariance simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.2
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• pp.87-97
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• 2013

Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) are critical circuit reliability issues in highly scaled CMOS technologies. In this paper, we analyze the impacts of NBTI and PBTI on SRAM $V_{MIN}$, and present a design solution for mitigating the impact of NBTI and PBTI on SRAM $V_{MIN}$. Two different types of SRAM $V_{MIN}$ (SNM-limited $V_{MIN}$ and time-limited $V_{MIN}$) are explained. Simulation results show that SNM-limited $V_{MIN}$ is more sensitive to NBTI while time-limited $V_{MIN}$ is more prone to suffer from PBTI effect. The proposed NBTI/PBTI-aware control of wordline pulse width and woldline voltage improves cell stability, and mitigates the $V_{MIN}$ degradation induced by NBTI/PBTI.