• Analytical Science and Technology
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• v.9 no.1
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• pp.26-34
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• 1996

A method to determine the trace amount of Se and Bi in the scalp hair using the hydride generation inductively coupled plasma atomic emmission spectrometry was studied. The optimum operation conditions of ICP for hydride generation are 0.6~0.8L/min for the carrier gas flow rate, and 6mm above the induction coil for the observation height. Hydrochloric acid concentrations for the optimum hydride generation conditions were greater than 1.5M when 2.5% $NaBH_4$ and NaOH were used, and greater than 0.5M when 2.5% $NaBH_4$ and 0.1% NaOH were used. Severe interference effects are observed from transition metals such as Cu and Ni, and they could be circumvented by the coprecipitation with lanthanum hydroxide.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.750-757
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• 2002

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ thin films have been prepared by spin coating method using photosensitive sol solution. Strontium ethoxide, tertramethylheptanedionato bismuth and tantalum ethoxide were used as starting materials. As UV exposure time to the SBT thin film increased, the UV absorption peak intensity of metal ${\beta}$-diketonate decreased due to reduced solubility by M-O-M bond formation. Solubility difference by UV irradiation on SBT thin film allows to obtain a fine patterning of thin film. Also, The ferroelectric properties of the UV irradiated SBT thin films were superior to those of the no-UV irradiated films.

• Journal of Magnetics
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• v.13 no.3
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• pp.110-113
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• 2008

In this study, heavy rare earth garnet $Tb_2Bi_1Ga_1Fe_4O_{12}$ powders were fabricated by a sol-gel and vacuum annealing process. The crystal structure was found to be single-phase garnet with a space group of Ia3d. The lattice constant $a_0$ was determined to be 12.465 ${\AA}$. From the analysis of the vibrating sample magnetometer (VSM) hysteresis loop at room temperature, the saturation magnetization and coercivity of the sample are 7.64 emu/g and 229 Oe, respectively. The N$\acute{e}$el temperature($T_N$) was determined to be 525 K. The M$\ddot{o}$ssbauer spectrum of $Tb_2Bi_1Ga_1Fe_4O_{12}$ at room temperature consists of 2 sets of 6 Lorentzians, which is the pattern of single-phase garnet. From the results of the M$\ddot{o}$ssbauer spectrum at room temperature, the absorption area ratios of Fe ions on 24d and 16a sites are 74.7% and 25.3%(approximately 3:1), respectively. These results show that all of the non-magnetic Ga atoms occupy the 16a site by a vacuum annealing process. Absorption area ratios of Fe ions are dependent not only on a sintering condition but also on the temperature of the sample. It can then be interpreted that the Ga ion distribution is dependent on the temperature of the sample. The M$\ddot{o}$ssbauer measurement was carried out in order to investigate the atomic migration in $Tb_2Bi_1Ga_1Fe_4O_{12}$.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.237-237
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• 2010

고효율의 열전특성을 갖는 나노 구조체 열전재료 연구의 일환으로 이종물질인 $Bi_2Te_3$-PbTe계 열전소재의 미세구조와 특성을 조사하였다. 계단식 냉각법(step cooling)를 통하여 시편을 제조 하였고, EPMA를 이용하여 시편의 미세구조를 관찰하였다. 열전소재의 상분리를 유도하기 위하여 $700^{\circ}C$에서 용융 후 3일 동안 $400^{\circ}C$로 유지시킨 후 상온까지 용융로에서 서냉하였다. EPMA를 이용하여 제조된 시편의 미세구조와 정량 분석을 하였고, 각 상의 결정구조 확인을 위하여 XRD 분석법을 이용하여 다결정의 PbTe와 $Bi_2Te_3$ 그리고 준안정상인 $PbBi_2Te_4$가 관찰 되었다. 계단식 냉각법을 통한 시편의 열전특성을 측정하였다. 이를 통하여 제조된 시편은 급속 냉각법으로 제조된 시편과 비교되었으며, 제벡계수는와 열전도도는 상온에서 각각 약 -100mV/K와 0.9W/mK로 약90%, 40%의 열전특성 향상을 확인하였다.

• Geomechanics and Engineering
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• v.21 no.4
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• pp.349-356
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• 2020

Rock brittleness, which is closely related to the failure modes, plays a significant role in the design and construction of many rock engineering applications. However, the brittle-ductile failure transition is mostly ignored by the current statistical damage constitutive model, which may misestimate the failure strength and failure behaviours of intact rock. In this study, a new statistical damage model considering rock brittleness is proposed for brittle to ductile behaviour of rocks using brittleness index (BI). Firstly, the statistical constitutive damage model is reviewed and a new statistical damage model considering failure mode transition is developed by introducing rock brittleness parameter-BI. Then the corresponding damage distribution parameters, shape parameter m and scale parameter F₀, are expressed in terms of BI. The shape parameter m has a positive relationship with BI while the scale parameter F₀ depends on both BI and ε_e. Finally, the robustness and correctness of the proposed damage model is validated using a set of experimental data with various confining pressure.

• Nuclear Engineering and Technology
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• v.53 no.4
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• pp.1323-1330
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• 2021

This work reported the radiation shielding characteristic of the bismuth titanium vanadium sodium tellurite glass system. The density of the specially-developed glass samples was increased from 2.21 to 4.01 g/cm³ with the addition of Bi₂O₃, despite the fact the molar volume is decease within 85.43-54.79 cm³/mol. The WinXcom program was used to approximate the effect of Bi₂O₃ on the gamma radiation shielding parameters of bismuth titanium vanadium sodium tellurite glasses. The ㎛ values decrease with the increase of Bi₂O₃ concentration. The computed data shows that the glass sample with 20 mol.% of Bi₂O₃ content has the greatest radiation attenuation performance in comparison to other selected glasses. The Bi₂O₃-TiO₂-V₂O₅-Na₂O-TeO₂ glass system shows excellent neutron shielding material with high long-term light transmittance and discharge resistance and could be potentially used as transparent radiation-resistant shielding glass applications.

• Transactions of Materials Processing
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• v.31 no.2
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• pp.73-80
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• 2022

In this study, a developed Mg-5Bi-2Al-0.4Mn (BAM520, wt%) alloy was successfully extruded at an extremely high speed of 70 m/min. Microstructural evolution during extrusion and the microstructural characteristics and tensile properties of the very-high-speed extruded BAM520 alloy were then investigated. The homogenized BAM520 billet contained only thermally stable Mg₃Bi₂ phase particles without any Mg₁₇Al₁₂ phase with a low melting temperature. Therefore, the BAM520 alloy exhibited excellent extrudability. The very-high-speed extruded BAM520 alloy had a completely recrystallized grain structure and a typical basal fiber texture. Despite the extremely high extrusion speed of 70 m/min, the extruded BAM520 alloy had a high ultimate tensile strength of 280 MPa due to combined strengthening effects of a small grain size, numerous fine Mg₃Bi₂ particles, and strong basal texture.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.1-6
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• 2008

Thermoelectric properties of calcium cobalt layer structure oxide system, $Ca_3Co_2O_6$ and $Ca_3Co_4O_9$ were investigated at the temperature range of 300 to 1000K for the application of thermoelectric generation. In the composition, the Ca site was partially substituted with Bi, Sr, La, K and the Co site was partially substituted with Mn, Fe, Ni, Cu, Zn. The thermoelectric properties of Bi substituted $Ca_3Co_4O_9$. $Ca_{2.7}Bi_{0.3}Co_4O_9$ for electrical conductivity, Seebeck coefficient and power factor were $85.4({\Omega}$cm)^{-l}, $176.2{\mu}V/K$ and $265.2{\mu}W/K^m$, respectively. The unit thermoelectric couple was fabricated with the p-type of $Ca_{2.7}Bi_{0.3}Co_4O_9$ and n-type ($Zn_{0.98}Al_{0.02}$)O thermoelectrics whose figure-of-merit(Z) were $0.87{\times}10^{-4}/K$ and $0.41{\times}10^4/K$, respectively. The generated thermoelectric power was about 30mV at the temperature difference of 120K in the unit thermoelectric couple.

• Resources Recycling
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• v.26 no.5
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• pp.22-28
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• 2017

In-Bi-Sn alloy sheet has been used as a thermal fusible parts of secondary battery safety system. This study offers a simple process to make In-Bi-Sn alloy fusible parts. The process consists of two procedures, melting and sheeting by tape casting. 62.5 wt%-In 20.0 wt%-Bi 17.5 wt%-Sn (M.P. $92.4^{\circ}C$) alloy sheet obtained by tape casting was used as the thermal fusible sheet of thermal fuse system for mobile telephone. The performance test of the system was carried out in oil bath, and the fusible alloy sheet was melted and cut off at $95^{\circ}C$. This results confirmed the possibility that the alloy sheet obtained by tape casting can be usable as a thermal fusible parts of battery safety system. And this process can be applied as a simple process to recycle the In-Bi-Sn alloy scrap separated from the used thermal fuse system.