• Korean Journal of Materials Research
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• v.28 no.9
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• pp.489-494
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• 2018

Lead free $(1-x)(0.675BiFeO_3-0.325BaTiO_3)-xLiTaO_3$ (BFBTLT, x = 0, 0.01, 0.02, and 0.03, with 0.6 mol% $MnO_2$ and 0.4 mol% CuO) were prepared by a solid state reaction method, followed by air quenching and their crystalline phase, morphology, dielectric, ferroelectric and piezoelectric properties were explored. An X-ray diffraction study indicates that lithium (Li) and tantalum (Ta) were fully incorporated in the BFBT materials with the absence of any secondary phases. Dense ceramic samples (> 92 %) with a wide range of grain sizes from $3.70{\mu}m$ to $1.82{\mu}m$ were obtained in the selected compositions ($0{\leq}x{\leq}0.03$) of BFBTLT system. The maximum temperatures ($T_{max}$) were mostly higher than $420^{\circ}C$ in the studied composition range. The maximum values of maximum polarization ($P_{max}{\approx}31.01{\mu}C/cm^2$), remnant polarization ($P_{rem}{\approx}22.82{\mu}C/cm^2$) and static piezoelectric constant ($d_{33}{\approx}145pC/N$) were obtained at BFBT-0.01LT composition with 0.6 mol% $MnO_2$ and 0.4 mol% CuO. This study demonstrates that the high $T_{max}$ and $d_{33}$ for BFBTLT ceramics are favorable for industrial applications.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.166-169
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• 2006

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNT) thin films were prepared on $Pt(111)/Ti/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_3$, $Nd(TMHD)_3$ and $Ti(O^iPr)_2(TMHD)_2$ were used as the precursors and were dissolved in n-butyl acetate. The BNT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNT thin film was $31.67\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.73-73
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• 2015

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.120-120
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• 2015

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.569-572
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• 2003

전력선 통신용 LC 공진필터에 사용되는 Ni-Zn 페라이트를 제조하기 위해 Ni0.8Zn0.2Fe2O4를 기본조성으로 선택하고 x (Co mol 비)를 변화시켜 전자기적 특성을 조사하였다. $Bi_2O_3$ CaO가 첨가됨으로써 균일한 입자성장과 입계에 고저항층이 형성되어 주파수 손실이 감소하였으며, $Ni_{0.8-x}Zn_{0.2}Co_xFe_2O_{\delta}$의 기본조성에 Co의 함량을 증가시키면 x = 0.05에서 투자율 75, 공진주파수 20 MHz의 특성을 나타내고 결정 입자 크기와 같은 구조적 특성에는 영향을 거의 미치지 않지만 자기이방성 변화에 따라 전자기적 특성에는 영향을 미친다. 또한, $Ni_{0.75}Zn_{0.2}Co_{0.05}Fe_2O_{4.017}$ 조성의 페라이트 코어의 발열량은 큐리온도 이하에서 일어난다.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.136-143
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• 2000

$SrBi_2Ta_2O_9;(SBT)$ films were deposited on p-type Si(100) at room temperature by rf magnetron sputtering method to confirm the possibility of application of $Pt/SBT/Pt/Ti/SiO_2/Si$ structure (MFM) for destructive read out ferroelectric RAM (random access memory). Their structural characteristics with the various annealing times and Ar/$O_2$ gas flow ratios in sputtering were observed by XRD (X-ray diffractometer) and the surface morphologies were observed by FE-SEM (field emission scanning electron microscopy), and their electrical properties were observed by P-V (polarization-voltage measurement) and I-V (current-voltage measurement). The Ar/$O_2$ gas flow ratios of sputtering gas were changed from 1 : 4 to 4 : 1 and SBT thin films were deposited at room temperature. The films show (105), (110) peaks of SBT by XRD measurement. SBT thin films deposited at room temperature were crystallized by furnace annealing at 80$0^{\circ}C$ in oxygen atmosphere during either one hour or two hours. Among their electrical properties, P-V curves showed shaped hysteresis curves, but the SBT thin films showed the asymmetric ferroelectric properties in P-V curves. When Ar/$O_2$ gas flow ratios are 1 : 1, 2: 1, the leakage current density values of SBT thin films are good, those values of 3 V, 5 V, and 7 V are respectively $3.11\times10^{-8} \textrm{A/cm}^2$, $5\times10^{-8}\textrm{A/cm}^2$, $7\times10^{-8}\textrm{A/cm}^2$.After two hours of annealing time, their electrical properties and crystallization are improved.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.211-219
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• 1991

본 논문은 고주파에서의 Ni-Zn페라이트의 첨가물에 따른 소결특성에 관하여 연구한 것이다. 연구에서 사용한 시편은 20mol% NiO, 30mol% ZnO 및 50mol% Fe$_{2}$ $O_{3}$이 조성으로된 페라이트를 모재로 하고 첨가물로서 각각 0.0025mol%, 0.005mol% 및 0.001mol%의 비율로 Nb$_{2}$ $O_{5}$, Bi$_{2}$ $O_{3}$ 및 V$_{2}$ $O_{5}$를 첨가하였다. 그리고 소결을 1100.deg.C에서 이루어졌다. 초투자율은 V$_{2}$ $O_{2}$가 첨가된 시편의 100KHz-1000KHz주파수대에서 4*$10^{2}$~8*$10^{2}$의 높은 값을 얻었다. 손실계수는 100KHz~500KHz주파수대에서 1*10~3*$10^{-2}$이었다. 1/(.mu.*Q)값은 0.005mo;% Bi$_{2}$ $O_{3}$가 첨가된 시편에서 가장 높은 값을 나타내었다. 자기저항은 초유자율과 반비례의 관계를 나타내었다. 실험의 결과 첨가물에 의한 소결특성은 액상형성에 의하여 고른 입자성장을 확인할 수 있었다. 따라서 0.01mol% V$_{2}$ $O_{5}$를 첨가한 시편이 가장 우수한 자기특성을 나타내고 있음을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.707-711
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• 2014

The $0.99Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3-0.01LaAlO_3$, $0.01LaMnO_3$ or $0.01LaFeO_3$ (0.99BNKT-0.01LA, 0.01LM or 0.01LF) ceramics were prepared by a conventional mixed mothod. The structure and morphology of the lead free ceramics were characterized by XRD (X-ray diffraction) and FE-SEM (field emission scanning electron microscopy). XRD results indicated that the BNKT ceramics modified by LA, LM or LF induced a transition from a ferroelectric tetragonal to a non-polar pseudo-cubic phase, leading to decrease in the remnant polarization ($P_r$) and coercive field ($E_c$) in the P-E hysterisis loops. The effects of the BNKT ceramics modified by La-based $ABO_3$ pervskite structure on the electric-field induced strain were investigated, and the largest normalized unipolar strain ($S_{max}/E_{max}$) was found in BNKT-0.01LF ceramic.

• 전기의세계
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• v.23 no.5
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• pp.61-65
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• 1974

Ba-ferrite and Sr-ferrite are mostly used for permanent magnetic materials. In this work, we investigated Pb-ferrite which is studying now at abroad. We studied the most appropriate mole percent of PbO to Fe$_{2}$O$_{3}$, calcinating temperature and time, sintering temperature and time, and further investigated effects of the annex(NaBiO$_{3}$) The method of appraisment is the microscope for meta and B-H curve by flaxmeter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.142-142
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• 2009

Bismuth-substituted yttrium iron garnet(Bi-YIG; $Bi_xY_{3-x}Fe_5O_{12}$, x=0, 0.5, 1.0, 1.5, 2.0) thin films were fabricated on glass substrates using a metal organic decomposition (MOD) method. The dielectric property was measured by NSMM(Near-field scanning microwave microscopy) system that operating frequency is 4 Ghz. The obtained reflection coefficient $S_{11}$ of the Bi:YIG thin films with different bismuth concentration was increased as the bismuth concentration increased due to the lattice mismatch and vacancy of ions because of a lager ionic radius of bismuth ion than yttrium ion.