Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)
- 2006.10a
- /
- Pages.166-169
- /
- 2006
Ferroelectric and Structural Properties of Nd-substituted $Bi_4Ti_3O_{12}$ Thin Films Fabricated by MOCVD
- Kang, Dong-Kyun (Department of Materials and Engineering, Korea University) ;
- Park, Won-Tae (Department of Materials and Engineering, Korea University) ;
- Kim, Byong-Ho (Department of Materials and Engineering, Korea University)
- Published : 2006.10.12
Abstract
A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric
Keywords