• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.180-180
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• 2011

재료의 양단간에 온도차를 주어 전압 또는 전류가 발생하는 지벡효과와 반대로 전위차를 주어 온도차를 유도하는 펠티에 효과를 열전효과로 일컫는다. 이 열전효과에 관한 연구는 그 특수성 때문에 1950년대 이후로부터 많은 관심을 받아왔다. 최근 들어 석유자원의 고갈 및 신재생에너지에 대한 관심의 고조와 맞물리면서 열전재료 및 소자에 연구는 더욱 활발히 이루어지고 있다. 전도성이 있는 모든 물질은 열전효과를 가지는 데, 그 중 Bi-Te 합금계의 열전 물질은 상온에서 가장 우수한 열전성능지수를 가지는 것으로 보고되어, 이를 이용한 열전 재료에 대한 많은 연구가 이루어져 왔다. 현재 상용화된 열전소자는 Bi-Te bulk를 이용하여 제조되고 있으나 열전성능지수의 한계를 극복하기 위해 나노구조화, 박막화시키는 연구가 활발히 진행되고 있다. 특히 박막화를 통해 열전소자의 상용화 및 양산화에 일조할 수 있을 것으로 예상된다. 하지만 열전소자의 양산화를 위해서는 대량생산에 용이한 증착공정이 개발되어야 한다. 증착공정 중 가장 양산화에 유리한 공정이 MOCVD (metal organic chemical vapor deposition)라고 생각되지만 이를 위해선 전구체의 특성 평가 및 공정개발이 필요하다. 따라서 본 연구팀은 MOCVD 공정을 이용하여 저온, 저압에서 Bi-Te 합금계의 박막 성장에 관한 연구를 수행하였다. 또한 적외선 분광 시스템을 활용하여 여러 전구체 중 최적의 Bi, Te 전구체 조합을 선별해내었다. 이 과정 속에서 Te 전구체의 독특한 분해특성 및 증착특성을 확인하였고, 이러한 특성을 조절하기 위해 Bi 전구체가 중요한 역할을 한다는 것을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.750-757
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• 2002

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ thin films have been prepared by spin coating method using photosensitive sol solution. Strontium ethoxide, tertramethylheptanedionato bismuth and tantalum ethoxide were used as starting materials. As UV exposure time to the SBT thin film increased, the UV absorption peak intensity of metal ${\beta}$-diketonate decreased due to reduced solubility by M-O-M bond formation. Solubility difference by UV irradiation on SBT thin film allows to obtain a fine patterning of thin film. Also, The ferroelectric properties of the UV irradiated SBT thin films were superior to those of the no-UV irradiated films.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.232-238
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• 2008

In this paper, a wideband power efficient 2.2 GHz - 4.9 GHz Medium Power Amplifier (MPA), has been designed and fabricated using $0.8{\mu}m$ SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage amplifier with all matching components and bias circuits integrated on-chip. A P1dB of 17.7 dBm has been measured with a power gain of 8.7 dB at 3.4 GHz with a total current consumption of 30 mA from a 3 V supply voltage at $25^{\circ}C$. The measured 3 dB bandwidth is 2.7 GHz and the maximum Power Added Efficiency (PAE) is 41 %, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of $1.7mm{\times}0.8mm$.

• Journal of the Korean Wood Science and Technology
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• v.42 no.6
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• pp.691-699
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• 2014

In order to improve the dimensional stability and durability of wood, this study attempted to impregnate bismuth (Bi) - tin (Sn) alloy metal with low melting temperature into solid woods of three species such as radiata pine, red oak and white oak, and investigated to determine an optimum condition of manufacturing the metal alloy-wood composites with natural wood grains. These Bi-Sn alloys were chosen for this study because they were harmless to human and melting at low temperatures. The composites resulted in high dimensional stability and low thickness swelling, and also showed much improved performance such as high bending strength, high hardness, high electric conductivity, and high thermal conductivity as floor materials. A proper impregnating condition of all specimens was determined as 10 minutes of the preliminary vacuum time, and $185^{\circ}C$ of the heating temperature. The proper processing condition for radiata pine wood was 2.5 minutes of the pressuring time at the pressure of $10kgf/cm^2$. For red oak wood, 10 minutes of the pressuring time at the pressure of $30kgf/cm^2$ were the proper condition. The proper manufacture conditions for white oak wood was determined as 10 minutes of the pressuring time at the pressure of $50kgf/cm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.1002-1005
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• 1998

Bismuth titanate thin films were prepared on {{{{ { SrTiO}_{3 } }}(100) and Si(100) substrates by dipping-pyrolysis pro-cess using metal naphthenates as starting materials. crystallinity and in-phase alignment of the films were analyzed by X-ray diffraction $\theta$-2$\theta$ scans and $\beta$ scans (pole-figures) respectively. Highly c-axis-oriented {{{{ { { {Bi }_{4 }Ti }_{3 }O }_{12 } }} thin films with smooth surfaces were obtained after heat treatment at 75$0^{\circ}C$ on {{{{ { SrTiO}_{3 } }}(100) sub-strate while the films grown of Si(100) exhibited polycrstalline characteristics. C-axis oriented film show-ed an epitaxial relationship with the {{{{ { SrTiO}_{3 } }} substrate.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.37-37
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• 2003

Ferroelectric random acess memories (FeRAMs) 재료로 주목받고 있는 강유전 물질은 이미 여러 해 전부터 많은 물질들에 대해 연구가 진행되어 왔다. 그 중 낮은 공정 온도를 가지며 큰 remanent polarization 값을 갖는 lead zirconium titanate (PZT) 박막에 대해 많은 연구가 진행되고 있다. 하지만 Pt 기판위에 증착된 PZT 박막은 높은 피로 현상을 보이는 문제가 있다. 최근 Pulsed laser deposition이나 metal-organic vapor phase epitaxy (MOVPE) 등의 방법에 의해 epitaxial substituted-$Bi_4Ti_3O_{12}$ (La, Nd) 박막에 대해 보고가 되고 있다. 본 연구에서는 높은 remanent polarization 값을 갖는 $(Bi,Ce)_4Ti_3O_{12}$ (BCT) 박막을 pulsed laser deposition 방법을 사용하여 증착하였다. 또한 Bismuth의 양을 변화시켜 Bismuth의 양에 따른 remanent polarization의 변화를 확인하여 보았다. 사용된 기판은 Pt/$TiO_2$/$SiO_2$/Si 기판을 사용하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.956-959
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• 2005

High Tc superconducting with a BiSrCaCuO was prepared by the titrate method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12 h is not in the amorphous state as expected but in a crystalline state. X-tay diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor.

• Journal of Magnetics
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• v.12 no.3
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• pp.93-96
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• 2007

We investigated the electronic structure and magnetic properties of zinc-blende CrP/SrBi interface by using the all-electron full-potential linearized augmented plane wave method within the generalized gradient approximation. It is found that the half-metallicity is destroyed when the two half-metals are in contact. Magnetic moments of the atoms forming the supercell differ considerably from the respective values obtained for the bulk structures of the two materials. Cr atoms being and not being in contact with Bi atoms have magnetic moment 3.43 and $2.69{\mu}_B$, respectively. Bi atoms lose their majority electrons which results in their negative polarization. Alkaline Sr atoms are very weakly negatively polarized. The spin distribution within the supercell is such that well separated regions of positive and negative polarization are seen, especially around the layer of P atoms being in contact with the layer of Sr atoms.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.5
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• pp.624-631
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• 2004

In this paper, new replication techniques fur a metal microcomponent having a real 3D shape were introduced. Helical gear was selected as one of a real 3D microcomponents for this study. The helical gear, which was made of photo-curable resin, was fabricated as a master pattern by microstereolithography technology. Then, a silicone rubber mold was fabricated from the master pattern. Lastly, a final bismuth alloy pattern was transferred from the silicone rubber mold by the microcasting process. In this paper, the replication technique is described in detail from the master pattern to the final pattern with some investigation on factors related to the technique.