• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 B
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• pp.1067-1069
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• 2004

22.9[kV]/50[MVA]/30[m] HTS transmission power cable has been developed and tested at Korea Electrotechnology Research Institute and LG Cable Company by 21 century center for applied superconductivity technology. It is necessary to measure of critical current degradations, AC loss, insulation test and etc at the HTS cable development. This paper is analyzed characteristics that critical current of HTS cable bending condition according to this paper. We will be able to decide the diameter of drum which HTS cable is wound around and minimum curvature radius of HTS cable from results of this research.

• 한국구조물진단유지관리공학회 논문집
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• 제16권4호
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• pp.34-43
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• 2012

도로의 진출입로나 인터체인지에 널이 적용되고 있는 곡선교는 곡선반경, 사각 및 받침 간격 등에 따라 직선교보다 복잡한 거동을 나타낸다. 특히 상부구조물의 휨과 비틀림에 의해 솟음현상이 발생할 수 있고, 예각부 받침에는 부반력이 발생할 수 있다. 본 연구에서는 곡선교에서 교량의 곡선반경, 받침간격 및 사각이 부반력에 미치는 영향에 대해 분석하였다. 이를 위해 RAMP에 적용 가능한 지간(L)이 50m인 단경간의 강박스거더 곡선교를 대상으로 3차원 격자구조 모델을 이용하여 해석적인 방법으로 지점반력을 산출하였다. 부반력은 교량의 평면형상, 구조계의 형성, 받침의 조건 등에 의해 그 크기가 결정 되므로 매개변수는 곡선반경, 사각 및 받침간격으로 하였으며, 도로교설계기준에 제시된 하중조합에 의해 발생되는 반력의 크기를 계산하였다. 수치해석한 결과에 의하면 부반력은 곡선반경, 받침간격 및 사각이 작을수록 크게 발생하는 것으로 나타났으며, 사각 $60^{\circ}$ 일때 곡선반경 250m 이하에서는 받침간격에 관계없이 항상 부반력이 발생하였고, 사각 $75^{\circ}$일 때 곡선반경 180m에서는 ${\theta}/B$가 0.27 이하, 곡선반경 250m에서는 ${\theta}/B$가 0.32 이하에서 부반력이 발생하지 않았으며, 사각 $90^{\circ}$ 일 때 곡선반경 130m에서는 ${\theta}/B$가 0.38 이하 일 때와 곡선반경이 180m 이상일 때 부반력이 발생하지 않았다. 이상의 결과로부터 설계변수인 곡선반경, 받침간격 및 사각이 곡선교에서 부반력 발생과 밀접한 관계가 있음을 확인하였고, 곡선교의 설계시 설계변수들의 상호관계를 적절히 설정하면 부반력이 발생하지 않는 구조계로 설계가 가능함을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.573-574
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• 2013

본 연구에서는 Roll-to-Roll 스퍼터를 이용한 ITO 성막 공정에서 Ar 이온 빔 처리가 플렉시블 ITO 박막의 전기적, 광학적, 구조적 특성에 미치는 효과를 연구하였다. Roll-to-Roll 스퍼터를 이용하여 ITO 박막을 성막할 때 Linear ion source를 이용하여 Ar 이온을 ITO 박막에 직접 조사할 때 일어나는 ITO 박막의 변화를 분석하였다. Ar 이온 빔에 인가되는 DC 파워 변화에 따른 ITO 박막의 전기적, 광학적 특성 변화를 Hall measurement 및 UV/Visible spectrometry 분석법을 통해 확인하였다. 이온 빔 처리 공정 시 인가되는 파워가 DC 100 W일 때 $5.81{\times}10^{-4}{\Omega}-cm$으로 이온 빔 처리를 하지 않은 $1.14{\times}10^{-3}{\Omega}-cm$에 보다 낮은 비저항을 나타냄을 확인할 수 있었다. 이온 빔 처리 전/후 ITO 박막의 결정성은 포항 가속기 X-ray scattering법을 이용하여 분석하였으며, 결과를 통해 Ar 이온 빔 처리가 ITO 박막의 표면에서의 국부적인 결정성을 향상을 일으킴을 알 수 있었다. 이러한 결정성 향상이 Roll-to-Roll 스퍼터된 ITO 박막의 전기적 특성을 향상과 매우 밀접한 관계가 있음을 확인할 수 있었다. 또한 이온 빔 처리 전/후 ITO/CPI의 기판 휨에 따른 기계적 안정성을 알아보기 위해 bending frequency 60 Hz, bending radius 15mm로 bending test를 진행을 통하여 이온 빔 처리 전후 ITO 박막의 특성을 비교 확인하였다. 본 실험 결과를 통해 Ar 이온빔 조사에 의해 상온에서 결정형 ITO 박막을 CPI 기판위에 형성 할 수 있었다. 또한 최적화된 ITO 박막을 이용하여 유기 태양전지를 제작하였으며 이를 통해 Ar 이온빔 처리된 결정형 ITO의 유연 태양전지 응용 가능성을 타진하였다.

• 전자공학회논문지A
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• 제32A권8호
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• pp.153-165
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• 1995

The design procedure of a GaAs/AlGaAs semiconductor matrix optical switch is presented for a simplified tree architecture in the viewpoint of optical loss. A low loss, 0.537 dB/cm, pin type substrate is designed by considering the loss due to imputity doping at 1.3 $\mu$m wavelength. The operating voltage and the device length of a reversed ${\Delta}{\beta}$ electro-optic directional coupler(EODC) swith which is a cross-point device of the 4${\times}$4 matrix optical switch and the bending loss of rib waveguide are caculated as functions of waveguide parameters and bending parameters. There is an optimum bending radius for some waveguide parameters. It is recommened that higher optical confinement conditions such as wide waveguide width and higher rib-height should be chosen for structural parameters of a low loss and a process insensitive 4${\times}$4 matris optical switch. A 4${\times}$4 optical matrix switch which has a 3 dB loss and a 12 volt operating voltage is designed.

• 대한기계학회논문집A
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• 제30권3호
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• pp.318-327
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• 2006

Due to the diversified use of recent Piezoelectric Zirconate Titanate Composite Actuate. (PZTCA), various PZTCAs with the different ply orientation of the fiber layer have been applied. For this reason, the applicable bending moment equation is necessary even though the fiber layer ply orientation and the laminate configuration are changed. The aim of this research is to evaluate the relationship between the total effective moment $(M^E)$ and Bernoulli-Euler bending moment (M) when the ply orientations of UD CFRP are changed. In conclusions, firstly, as the performance test results by the CFRP ply orientation, the performance of [0] and [90] were stable. However, while the performance of [+45] was suddenly decreased after 5 hours. Secondly, the change of $(M^E)$ by the CFRP ply orientation was evaluated. As the CFRP ply orientation was increased from [0] to [+60], the $(M^E)$ were gradually decreased. However, they became a little bit increased from [+60] to [90]. Finally, after the change of M by the CFRP ply orientation was evaluated, it was found that $M^E=2.2M$ was valid for just [0] and that there was a relationship between $M^E$ and M according to the ply orientation.

• 한국정밀공학회지
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• 제22권2호
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• pp.164-171
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• 2005

This study aims to examine an effect of stacking sequence and curvature on the penetration characteristic of a composite laminated shell. For the purpose, we manufactured specimens with different stacking sequences and curvatures, and conducted a penetration test using an air-gun. To examine an influence according to stacking sequence, as flat plate and curvature specimen had more plies, their critical penetration energy was higher, Critical penetration energies of specimen A and C with less interfaces somewhat higher than those of B and D with more interfaces. The reason that with less interfaces, critical penetration energy was higher is pre-impact bending stiffness of composite laminated shell with less interfaces was lower than that of laminated shell with more interfaces, but bending stiffness after impact was higher. And it is because interface, the weakest part of the composite laminated shell, was influenced by transverse impact. As curvature increases, critical penetration energy increases linearly. It is because as curvature increases, resistance to in-plane deformation as well as bending deformation increases, which need higher critical penetration energy. Patterns of cracks caused by penetration of composite laminated shells include interlaminar crack, intralaminar crack, and laminar fracture. A 0$^{\circ}$ply laminar had a matrix crack, a 90$^{\circ}$ply laminar had intralaminar crack and laminar fracture, and interface between 0$^{\circ}$and 90$^{\circ}$laminar had a interlaminar crack. We examined crack length and delamination area through a penetration test. For the specimen A and C with 2 interface, the longest circumferential direction crack length and largest delamination area were observed on the first interface from the impact point. For the specimen B and D with 4 interface, the longest crack length and largest delamination area were observed on the third interface from the impact point.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• 한국농공학회지
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• 제34권1호
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• pp.78-86
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• 1992

This paper aims at investigating the effect of steel ratio and the magnitude of edge-ratio on the mechanical characteristics of reinforced concrete ring sector plate. The influence of steel bars was taken into account by coupling stiffness matrix of the steel bar element with that of the concrete plate element without dealing with separate element of steel bar and by establishing the composite stiffness matrix, which leads to the desirable result which does not increase th number of element could be obtained. Through case studies with 6 cases various steel ratios in ring sector plate supported at four edges and 4 cases with different open angles, the influence of the steel ratio was examined. A numerical analysis to find out the effect of the steel ratio d ue to above mentioned cases was carried out by 4 boundary conditions ; all edges clamped (B.C-1), all edges simply supported (B.C-2), curvilinear two edges clamped and other edges free (B.C-3) and curvilinear two edges simply supported and other edges free(B.C-4). The main results obtained are summarized as follows : 1. The effect of steel ratio on the magnitude of lateral deflection and x-directional bending moment at the center of sector plate and the midpoint of outer and inner curvilinear edges is almost the same up to $30^{\circ}$ of open angle. Beyond $30^{\circ}$ of the angle, the larger the angle, the greater the effect of ratio. 2. In design works using balanced steel ratio, the effect of steel bar can be ignored. But for larger open angles, especially greater than $90^{\circ}$, it proves desirable to consider the effect of steel bar. 3. The effect of the arc length of center circle/straight edge on lateral deflection and bending moment is remarkable in B.C-2. For larger open angle, the effect is also noted except for B.C-3 which turn out hardly affected. 4. The effect of the radius of curvature/straight side length on lateral deflection and x-directional bending moment is noted in B.C-2. As open angle increases, B.C-1 and B.C-3 almost agree and B.C-2 approaches B.C-4.

• 한국표면공학회지
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• 제41권1호
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• pp.1-5
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• 2008

In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.55-62
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• 2019

Polydimethylsiloxane (PDMS)를 베이스 기판으로 사용하고 이보다 강성도가 높은 flexible printed circuit board (FPCB)를 island 기판으로 사용한 soft PDMS/hard PDMS/FPCB 구조의 강성도 경사형 신축패키지를 형성하고, 이의 탄성특성 및 인장 싸이클과 굽힘 싸이클에 따른 신뢰성을 분석하였다. Soft PDMS, hard PDMS, FPCB의 탄성계수가 각기 0.28 MPa, 1.74 MPa, 2.25 GPa일 때 soft PDMS/hard PDMS/FPCB 신축패키지의 유효 탄성계수는 0.6 MPa로 분석되었다. 0~0.3 범위의 인장 싸이클을 15,000회 인가시 신축패키지의 저항변화률은 2.8~4.3% 이었으며, 굽힘반경 25 mm의 굽힘 싸이클을 15,000회 인가시 저항변화률은 0.9~1.5% 이었다.