An optimal design of 4${\times}$4 optical matrix switch

4${\times}$4 매트릭스 광스위치의 최적 설계

The design procedure of a GaAs/AlGaAs semiconductor matrix optical switch is presented for a simplified tree architecture in the viewpoint of optical loss. A low loss, 0.537 dB/cm, pin type substrate is designed by considering the loss due to imputity doping at 1.3 $\mu$m wavelength. The operating voltage and the device length of a reversed ${\Delta}{\beta}$ electro-optic directional coupler(EODC) swith which is a cross-point device of the 4${\times}$4 matrix optical switch and the bending loss of rib waveguide are caculated as functions of waveguide parameters and bending parameters. There is an optimum bending radius for some waveguide parameters. It is recommened that higher optical confinement conditions such as wide waveguide width and higher rib-height should be chosen for structural parameters of a low loss and a process insensitive 4${\times}$4 matris optical switch. A 4${\times}$4 optical matrix switch which has a 3 dB loss and a 12 volt operating voltage is designed.