• The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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• v.29 no.3
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• pp.159-167
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• 2016

Prostate cancer is one of the most common non-skin cancers in men. Armeniacae Amarum Semen has traditionally been used for the treatment of inflammation diseases, leprosy, leucoderma, and tumors. Apoptosis, which is also known as programmed cell death, is an important mechanism in cancer treatment.Objectives : We observed whether an aqueous extract of Armeniacae Amarum Semen induces apoptotic cell death in human DU145 prostate cancer cells.Methods : We treated DU145 cells with Armeniacae Amarum Semen extract and investigated characteristics of apoptosis. And investigated whether treated with Armeniacae Amarum Semen extract increased Bax mRNA expression, Bcl-2 mRNA expression, caspase-3 enzyme activity and their protein level.Results : We have shown that Armeniacae Amarum Semen extract can induce apoptotic cell death in human DU145 prostate cancer cells by caspase-3 activation through the down-regulation on Bcl-2 expression and the up-regulation on Bax expression.Conclusions : It can be expected that an aqueous extract of Armeniacae Amarum Semen may offer a valuable means for the treatment of prostate cancers.

• Journal of the Korean institute of surface engineering
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• v.41 no.3
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• pp.83-87
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• 2008

This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from -50 V to -200 V, the etch rate of TiN thin film increased from 15 nm/min to 452 nm/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 nm), $Cl^+$(481.9 nm) and $Cl^{2+}$(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in $BCl_3$/Ar ICP plasma.

• Journal of Life Science
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• v.20 no.4
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• pp.572-577
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• 2010

The purpose of this study was to find out the Bcl-2 (B-cell leukemia/lymphoma-2), Bax, and caspase-3(cysteine-aspartic proteases-3) protein expression in soleus and EDL muscle according to treadmill exercise intensity in 60 week-old SD rats. The SD rats were randomly divided into four groups (n=10 in each group): control (CON), low intensity exercise (LE), moderate intensity exercise (ME), and high intensity exercise (HE). The exercise was given to the rats for 8 wk, 5 day/wk. The animals underwent treadmill exercise at intensities of 30 min at 8 m/min for the LE group, 15 min at 16 m/min for the ME group, and 9 min at 24 m/min for the HE group. The results were as follows: the expression of Bcl-2 protein was lowest in the HE group and the expression of Bax protein was highest in the HE group. The expression of caspase-3 (cleaved form) protein was observed in the HE group. For the different types of muscle fiber, Bcl-2 protein expression in the soleus muscle was decreased in all groups. Bax protein expression in the soleus muscle was increased in the HE group only. Bcl-2 protein expression in the EDL muscle was decreased in the HE group, and Bax protein expression in the EDL muscle was increased in the ME and HE groups. Consequently, the protein expression related to the aged rats shows a difference according to the intensity of exercise. In addition, caspase-3 protein expression appeared in the HE group; however, in all amounts of intensity, DNA fragmentation was not observed. Therefore, apoptosis on skeletal muscles of aged mice can be intervened with optimal exercise. On the other hand, high intensity exercise can potentially accelerate the apoptosis of muscle fiber in aged rats.

• Tuberculosis and Respiratory Diseases
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• v.61 no.4
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• pp.366-373
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• 2006

Background: Paraquat is extremely toxic chemical material, which generates reactive oxygen species (ROS), causing multiple organ failure. In particular, paraquat leads to irreversible progressive pulmonary fibrosis. Exaggerated cell deaths exceeding the normal repair of type II pneumocytes leads to mesenchymal cells proliferation and fibrosis. This study examined the followings; i) whether or not paraquat induces cell death in lung epithelial cells; ii) whether or not paraquat-induced cell deaths are apoptosis or necrosis; and iii) the effects of N-acetylcysteine, dexamethasone, and bcl-2 on paraquat-induced cell deaths. Methods: A549 and BEAS-2B lung epithelial cell lines were used. The cell viability and apoptosis were evalluated using a MTT assay, Annexin V staining was monitored by fluorescence microscopy, The level of bcl-2 inhibition was examined by establishing stable A549 pcDNA3-bcl-2 cell lines throung the transfection of pcDNA3-bcl-2 with the mock. Results: Paraquat decreased the cell viability in A549 and BEAS-2B cells in a dose and time dependent manner. The Annexin V assay showed that apoptosis was the type of paraquat-induced cell death. Paraquat-induced cell deaths was significantly inhibited by N-acetylcysteine, dexamethasone, and bcl-2 overexpression. The cell viability of A549 cells treated with N-acetylcysteine, and dexamethasone on the paraquat-induced cell deaths were increased significantly by 10 ~ 20%, particularly at high doses. In addition, the cell viability of A549 pcDNA3-bcl-2 cells overexpressing bcl-2 was significantly higher than the untransfected A549 cells. Conclusion: Paraquat induces apoptotic cell deaths in lung epithelial cells in a dose and time dependent manner. The paraquat-induced apoptosis of lung epithelial cells might occur through the mitochondrial pathway.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.220-220
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• 2010

펄스 직류 $BCl_3$ 플라즈마를 이용하여 GaAs와 AlGaAs의 건식식각을 연구하였다. 공정의 주요 변수는 펄스 직류 전압(350~550V), 펄스 직류 시간($0.4{\sim}1.2{\mu}sec$.), 펄스 직류 주파수(100~250kHz)이었다. 식각 실험 후 샘플의 식각률, 식각 선택도, 표면 형상을 비교, 분석하였다. 또한, 광학 발광 분석기(Optical Emission Spectroscopy)를 이용하여 식각하는 동안 플라즈마 방전 특성을 분석하였다. 표면 단차 측정기(Alpha-step IQ, Tencor)로 식각 깊이를 측정해 식각률을 계산하였다. 표면 거칠기 또한 단차 측정기의 표면 거칠기 프로그램을 이용하여 분석하였다. 식각 벽면과 표면 상태는 주사전자현미경(Field-emission scanning electron microscopy)을 이용하여 관찰하였다. 분석 결과는 1) 펄스 직류의 전압이 증가하면 전극에 걸리는 파워가 올라가고 GaAs와 AlGaAs의 식각률도 증가하였다. 2) 76 mTorr 공정 압력, $0.7{\mu}sec$. 펄스 직류 시간과 200 kHz 주파수 일 때 10 sccm $BCl_3$ 펄스 직류 플라즈마에서 GaAs와 AlGaAs 둘 다 약 $0.4{\mu}m/min$ 이상의 식각 속도를 보여주었다. 3) 식각 선택도는 펄스 직류의 전압이 높아지면 증가하였고, 펄스 직류 주파수의 증가도 공정 파워와 GaAs와 AlGaAs의 식각률을 증가시켰다. 4) 그러나 펄스 직류 주파수가 150kHz 이하일 때에는 GaAs와 AlGaAs가 거의 식각되지 않았다. 5) 표면 거칠기는 펄스 직류 주파수가 증가하면 미세하게 좋아졌고 플라즈마는 펄스 직류 주파수가 100~250kHz 일 때 생성되었다. 6) 펄스 직류 시간의 증가는 공정 파워, 식각률, 식각 선택도 모두의 증가를 가져왔다. 7) 광학발광분석기(OES) 데이타는 $BCl_3$ 플라즈마에서 넓은 범위(450~700nm)에서의 염소(Cl) 분자 피크를 나타내었다. 8) 전자 현미경 사진은 펄스 직류 전압이 400 V보다 550 V 일 때보다 더 이방성(Anisotropic)측면과 부드러운 표면을 나타냈지만, 조금의 홈(Trench)이 발견되었다. 결론적으로 펄스 직류 $BCl_3$ 플라즈마는 GaAs와 AlGaAs의 건식식각에서 우수한 결과를 나타냈었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.826-830
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• 2013

In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.256-259
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• 2009

The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of $ZrO_2$ thin film and selectivity of $ZrO_2$ thin film over $SiO_2$ thin film in inductively coupled plasma as functions of $Cl_2$ addition in $BCl_3$/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of $10^{\circ}C$ to $80^{\circ}C$. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).

• Journal of Nutrition and Health
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• v.37 no.1
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• pp.31-37
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• 2004

Curcumin, a natural compound extracted from rhizomes of Curcuma longa, has been shown to possess potent anti-inflammatory and anti-tumor activity. The mechanism by which curcumin initiates apoptosis remains poorly understood. In this study, we investigated the effects of curcumin on caspase-3 activity and protein expression of procaspase-3, Bcl-2, Bax, total Akt and phosphorylated Akt in SW480 human colon cancer cell. We cultured SW480 cells in the presence of various concentrations (0, 10, 20 or 30 uM) of curcumin. Curcumin inhibited colon cancer cell growth in a dose-dependent manner (p < 0.05). Caspase-3 activity was significantly increased dose-dependently in cells treated with curcumin (p < 0.05), concisely procaspase-3 expression was significantly decreased. Bcl-2 levels were decreased dose-dependently in cells treated with curcumin (p < 0.05), but Ben remained unchanged. In addition, phosphorylated Akt levels and total Akt levels were markedly lower in cells treated with 20 uM of curcumin treatment (p < 0.05), In conclusion, we have shown that curcumin inhibits cell growth and induces apoptosis in SW480 human colon cancer cell lines via Akt signal pathway.

• The Journal of Korean Obstetrics and Gynecology
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• v.35 no.3
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• pp.1-23
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• 2022

Objectives: The purpose of this study is to evaluate anti-breast cancer and anti-inflammatory effects of Chungganhaewool-tang and Shipyeukmiyeugi-eum. Methods: MDA-MB-231 cells were used to measure cytotoxicity, Reactive oxygen species (ROS) production, protein expression amounts of Bcl-2-associated X protein (Bax), B-cell lymphoma 2 (Bcl-2), B-cell lymphoma-extra large (Bcl-xl), Cytochrome C Caspase-3, Caspase-7, Caspase-9, Poly ADP-ribose polymerase (PARP), Nuclear factor erythroid-2-related factor 2 (Nrf2), Heme oxygenase-1 (HO-1) and NAD (P) H Quinone Oxidoreductase 1 (NQO1) to evaluate the anti-breast cancer effects of Chungganhaewool-tang (CHT) and Shipyeukmiyeugi-eum (SYE), and THP-1 cells, differentiated into macrophage and induced inflammation with Lipopolysaccharide (LPS), were used to measure production amounts of ROS, Nitric oxide (NO), and protein expression amounts of Inducible nitric oxide synthase (iNOS), Cyclooxygenase (COX-2), Interleukin-1 beta (IL-1β), Interleukin-6 (IL-6) and Tumor necrosis factor-alpha (TNF-α) to evaluate the anti-inflammatory effects of CHT and SYE. Results: CHT and SYE reduced MDA-MB-231 cell counts, increased protein expression of Bax and Cytochrome C, and decreased protein expression of Bcl-2, Bcl-xl. The protein expression amounts of Caspase-3, 7, and 9 decreased, but amounts of the active form, cleaved Caspase-3, 7, and 9, increased. In addition, PARP protein expression decreased, the amount of PARP protein in the cleaved form increased, and the amount of protein expressions of Nrf2 and HO-1 decreased, but NQO1 showed no significant difference. In THP-1 cells CHT and SYE reduced ROS and NO, and reduced protein expressions of iNOS, COX-2, IL-1, and TNF-α, but only SYE groups reduced IL-6. Conclusions: This study suggests that CHT and SYE have potential to be used as treatments for breast cancer.