• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.794-798
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• 2011

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.3
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• pp.167-172
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• 1999

The device characteristics of the base resistance controlled thyristor with self-align corrugated p-base is demonstrated for the first time with varying the n+ cathode width and the temperature form room temperature to $125^{\circ}C$. The experimental results show that the snap-back in the CB-BRT is significantly suppressed irrespective of the various n+ cathode width and the temperature as compared with that of the conventional BRT. The maximum controllable current of the CB-BRT is uniformly higher when compared with that of the conventional BRT over the temperature range from room temperature to $125^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.2
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• pp.57-59
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• 2001

We investigated the maximum controllable current characteristics of the CB-BRT (Corrugated p-Base-Base Resistance Controlled Thyristor), which suppresses the snap-back effectively and increases the maximum controllable current(MCC) by employing the corrugated p-base. Experimental result shows that, when compared with conventional BRT, the MCC of the CB-BRT exhibits good stability on various process parameters. The MCC of the CB-BRT is larger than that of the conventional BRT by 50%, and the variation of the MCC in CB-BRT, caused by variation of the process parameters, is only 20% of that of the conventional BRT.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.530-532
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• 1999

A new lateral device entitled SB-DCEST(segmented p-base dual-channel emitter switched thyristor), which suppresses the snapback is proposed and successfully fabricated. The proposed device effectively suppressed the snapback phenomenon by employing the gigh resistance in self-aligned segmented p-base when compared with the conventional DCEST. The experimental results show that the SB-DCEST has the low forward voltage drop of 4.3 V at anode current of $150 A/cm^2$ with the eliminated snap-back regime, while conventional DCEST exhibits higher forward voltage drop of 5.3 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.201-207
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• 2002

In this paper, we haute proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. New power BRTs have shown superior electrical characteristics including the snab-back effect and the forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with the intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of the BRT is the avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develop a super high voltage power device and it applies to another power device including IGBT, EST and etc.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1038-1041
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• 2002

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power device and applicate to another power device including IGBT, EST and etc,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.243-246
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• 2001

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effict and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.243-246
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• 2001

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.153-155
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• 2002

Trench sate CB-BRT:TC-BRT의 최대 제어 가능 전류(Maximum Controllable Current)에 영향을 미치는 설계 변수들을 조사하였다. 최대 제어 가능 전류를 결정하는 중요 설계 변수들로 트렌치 깊이, 핑거 게이트 길이, 메인 게이트 길이, 트렌치 밀도를 고려하였다. TC-BRT의 실험적 결과를 기존의 BRT와 CB-BRT의 결과와 비교하였다. 최대 제어 가능 전류는 트렌치 깊이와 트렌치 밀도가 증가하고 메인 게이트 길이가 감소할수록 증가하였으며 핑거 게이트 길이에 대해서는 큰 영향을 받지 않았다. 핑거 게이트가 있는 TC-BRT가 없는 것에 비해 최대 제어 가능 전류가 약 15% 높게 나타났다. 트렌치 밀도가 작을 때는 핑거 게이트에 의한 영향이 두드러지고 트렌치 밀도가 높아질수록 트렌치 게이트의 역할이 증가하였다.