• Food Science and Biotechnology
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• v.14 no.1
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• pp.68-72
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• 2005

Moisture sorption characteristics of edible composite films were determined and compared against moisture barrier properties. Edible composite films were Z1 (zein film with polyethylene glycol(PEG) and glycerol), Z2 (zein film with oleic acid), ZA1 (zein-coated high amylose corn starch film with PEG and glycerol), and ZA2 (zein-coated high amylose corn starch film with oleic acid). Z2 film showed the lowest equilibrium moisture content (EMC), monolayer value ($W_m$), water vapor permeability (WVP), and water solubility (WS). Surface structure of Z2 was relatively denser and finer than that of other edible films. GAB $W_m$ and C values decreased, while K values increased with increasing temperature. Correlation coefficients of WS:EMC and WVP:EMC at Aw 0.75 were higher than those of WS: $W_m$ and WVP: $W_m$, respectively. EMC values at Aw 0.75 appeared useful for evaluating or predicting moisture barrier properties of edible films.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1722-1725
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• 2007

We will discuss and compare the different ways to manufacture high performance Barix coated barrier films as a substrate for displays: R2R vs Batch. It will be shown that the barrier performance of the Barix coating on plastic can be as good as on glass substrates. More then 1000 hrs of testing at 60C/90RH can be passed without degradation of Ca samples

• Conservation Science in Museum
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• v.16
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• pp.96-113
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• 2015

High-barrier films are used to store cultural heritage objects in a safe environment sealed from oxygen and moisture. One of the high-barrier films use populary E manufactured by Japanese company M from the 1990's. However, this product has stayed in wide use, due to dearth of research on related subjects - including studies comparing it with other similar products-, in spite of the fact that high price information about its characteristics and environmental conditions is largely lacking. This study examines the characteristics of a number of high-barrier films with the goal to establish environmental standards for safer conservation of cultural heritage objects. E by the Japanese manufacturer M is compared with four other films; an electronics packaging films by a Korean firm, a film specially produced for the purposes of experiment in this study and a zipper bag-type film. Experiments were performed to compare the properties and gas blocking ability of the films by looking at their cross-section and measuring the thickness, tensile strength, elongation, absorbance of UV and visible light, yellowing and the permeability for oxygen and vapor. Based on these experiments, there are observed changes under different environmental conditions and depending on the length of use through temparature and humidification reproucing test. The results showed that while the high-barrier film by the Korean manufacturer was suitable for use as a packaging material for cultural heritage objects, the zipper bag-type film (P) was ill-adapted for this purpose. Based on the experiments reproducing the real-world environment, the length of useful life was also determined for each.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.394-394
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• 2012

We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.3 no.2
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• pp.3-16
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• 1996

This study was investigated to the effect of oxygen barrier of four different packaging films of the shelf life of proessed meat product by the simulated distribution test and storage test. The microbial growth, pH, VBN content, TBA value, color change and sensory evaluation were compared during the 2-month storage period at 4, 10, $20^{\circ}C$ after finished the simulated distribution test. The oxygen transmission rates ($cc/m^2$ day) were BF001: 27,88; BF003; 12.30;NY; 77.98; EVOM; 0.41 respectively. The packaging films were not effected on the changes of pH, VBN content, TBA value and color during the storage period. The aerobic microbial growth was increased only at $20^{\circ}C$ in the order of growth rate in the following films;NY > BF001 > BF003 > EVOH. Therefore, the microbial growth was affected significantly by the properties of oxygen barrier off packaging films and it should be an indicator of establishing the shelf life processed meat product.

• Korean Journal of Food Science and Technology
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• v.39 no.2
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• pp.158-163
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• 2007

In this study, we prepared curdlan composite films and determined their properties in order to select the most appropriate setting methods, moisture barrier materials, and viscoelasticity enhancing materials. High set curdlan films with polyethylene glycol (PEG) showed higher tensile strength and moisture barrier properties than low set films. Films with oleic acid as a moisture barrier material had greater tensile strength, elongation and moisture barrier properties than films with acetylated monoglyceride (AMG). Lastly, films using polyisobutylene (PIB) as a viscoelasticity enhancing material showed higher elongation than films with polybutene (PB).

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).