• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.286-290
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• 2020

The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.

• Nuclear Engineering and Technology
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• 제50권5호
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• pp.724-730
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• 2018

Chromium and chromium nitride were selected as potential barriers to prevent fuel-clad chemical interaction (FCCI) between the cladding and the fuel material. In this study, ferritic/martensitic HT-9 steel and misch metal were used to simulate the reaction between the cladding and fuel fission product, respectively. Radio frequency magnetron sputtering was used to deposit Cr and CrN films onto the cladding, and the gas flow rates of argon and nitrogen were fixed at certain values for each sample to control the deposition rate and the crystal structure of the films. The samples were heated for 24 h at 933 K through the diffusion couple test, and considerable amount of interdiffusion (max. thickness: $550{\mu}m$) occurred at the interface between HT-9 and misch metal when the argon and nitrogen were used individually. The elemental contents of misch metal were detected at the HT-9 through energy dispersive X-ray spectroscopy due to the interdiffusion. However, the specimens that were sputtered by mixed gases (Ar and $N_2$) exhibited excellent resistance to FCCI. The thickness of these CrN films were only $4{\mu}m$, but these films effectively prevented the FCCI due to their high adhesion strength (frictional force ${\geq}1,200{\mu}m$) and dense columnar microstructures.

• 반도체디스플레이기술학회지
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• 제8권2호
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• pp.49-53
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• 2009

The oxygen barrier films were formed on poly(ethylene terephthalate) (PET) substrate by a sol-gel process using 3-aminoproprytrimethoxysilane (APTMOS). The effects of solvent type, coating times and incorporation of fumed silica on oxygen permeability coefficient were investigated. The APTMOS coating film prepared from methanol as a solvent exhibited higher oxygen barrier properties than that using THF. The oxygen permeability coefficient of coated film with APTMOS/methanol by coating 7 times was measured to be $2.28{\times}10^{-6}$, while that of PET film was $1.16{\times}10^{-4}$ GPU. The addition of fumed silica does not affect the oxygen barrier properties. It may be explained that silica particles disrupt chain packing, which leads to an increase in free volume for permeation.

• 한국결정성장학회지
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• 제33권3호
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• pp.97-103
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• 2023

수분 차단성이 우수한 투명 포장재용 배리어성 필름을 개발하기 위하여, 상온 진공하에서 플라즈마 활성화 표면처리 공정의 전처리 공정을 거친 후에, 나노클레이 분산 적층 코팅층을 형성한다. 접착력 향상을 위한 코팅 공정의 적절한 가교공정과 최적분산공정을 통한 커플링 첨가제를 최적화하는 데 중점을 두었다. 기능성 코팅 박막에 대하여 분석한 결과는 수분 투과도 10 g/m²/24 hrs(ASTM F-1249) 이하, 산소 투과도 30 cc/m²/24 hrs(ASTM D3985) 이하임을 보여주었다. 이는 종래의 무처리 필름의 10배 이상 수분 차단성이 우수한 투명 포장용 표면기능성 코팅박막에 해당됨을 보였다. 아울러, 투명가스 차단 필름의 두께는 0.1 mm 이내이며, 투명가스차단 복합층은 2개의 층으로 구성되었다. PET 박막 계면 특성연구에서, FT-IR의 실험분석에 의하면 R DS 1.125 %에서 반응 활성도가 최적화임을 나타내고 있다.

• 한국자기학회지
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• 제18권1호
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• pp.32-35
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• 2008

차세대 반도체 산업의 발전을 위하여 반도체 소자의 구조는 DRAM, FRAM, MRAM 등 여러 분야에서 다양한 연구가 진행되고 있다. 특히 이런 차세대 반도체 소자에서 금속 배선으로는 Cu가 사용되며, Cu 금속 배선을 위한 확산방지막에 대한 연구는 반드시 필요하다[1-3]. Cu 금속 배선을 위한 확산방지막에 대한 현재까지의 연구에서는 Tungsten(W)을 기반으로 Nitride(N)를 불순물로 첨가한 확산방지막에 대하여 연구되었다[4-7]. 이러한 W-N를 기반으로 본 연구에서는 물리적 기상 증착법(PVD) 방법인 RF Magnetron Sputter 방법으로 W-N 이외에 Carbon(C) 과 Boron(B)을 첨가하여 확산방지막의 특성을 확인하였고, 특히 Boron Target의 power를 변화하여 W-B-C-N 확산방지막의 Boron에 의한 특성과 열적 안정성을 연구하였다[8-10]. 실험은 다양한 Boron의 조성을 가지는 확산방지막을 증착하여 $\beta$-ray와 4-point probe를 사용하여 확산방지막의 특성을 확인하였고, 고온($700^{\circ}C{\sim}1000^{\circ}C$) 열처리한 후 X-ray Diffraction 분석을 하여 열적 안정성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

• 폴리머
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• 제37권5호
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• pp.579-586
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• 2013

용액 삽입법을 이용하여 다양한 함량의 사포나이트(SPT) 점토를 포함한 폴리(비닐 알코올)(poly(vinyl alcohol), PVA) 나노 복합체 필름을 제조하였다. SPT를 0에서 10 wt%까지 첨가한 PVA 나노 복합체 필름들의 열적 특성, 모폴로지, 광학 투명성 및 기체 투과성에 대해 조사하였다. 특히 5 wt% SPT 포함한 PVA 복합체 필름이 매우 우수한 열적 특성과 기체 차단성을 나타내었다. 5 wt% SPT 포함된 복합체 필름을 연신율에 따라 150에서 250%까지 이축 연신하였고, 이축 연신율에 따른 점토 분산성, 광학적 특성 및 기체 투과성에 대한 조사를 하였다. 다양한 비로 이축 연신한 PVA 나노 복합체 필름은 우수한 광학 투명성과 산소 차단성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Journal of Microbiology and Biotechnology
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• 제17권3호
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• pp.520-523
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• 2007

Edible films of gelatin and com zein were prepared by incorporating nisin to the film-forming solutions. Com zein film with nisin of 12,000 IU/ml had an increase of 11.6 MPa in tensile strength compared with the control, whereas gelatin film had a slight increase with the increase of nisin concentration added. Water vapor permeability for both com zein and gelatin films decreased with the increase of nisin concentration, thus providing a better barrier against water. Antimicrobial activity against Listeria monocytogenes increased with the increase of nisin concentration, resulting in 1.4 log cycle reduction for com zein film and 0.6 log cycle reduction for gelatin film at 12,000 IU/ml. These results suggest that incorporation of nisin into com zein and gelatin films improve the physical properties of the films as well as antimicrobial activity against pathogenic bacteria during storage, resulting in extension of the shelf life of food products by providing with antimicrobial edible packaging films.

• Food Science and Biotechnology
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• 제14권1호
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• pp.112-116
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• 2005

Composite films were prepared with soy protein isolate (SPI) and various clay minerals by casting from polymer and clay water suspension. Effects of clay minerals on film thickness, moisture content (MC), tensile strength (TS), elongation at break (E), water vapor permeability (WVP), and water solubility (WS) were tested. Properties including thickness, surface smoothness, and homogeneity of films prepared with organically modified montmorillonite (O-MMT), Wamok clay (W-clay), bentonite, talc powder, and zeolite were comparable to those of control SPI films. TS increased significantly (p<0.05) in films prepared with O-MMT and bentonite, while WVP decreased significantly (p<0.05) in bentonite-added films. WS of most nanocomposite films decreased significantly (p<0.05).