• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.198.1-198.1
• /
• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• 한국전기전자재료학회논문지
• /
• 제25권2호
• /
• pp.121-124
• /
• 2012

The characteristics of Ga-doped zinc oxide (GZO) thin films deposited at different deposition temperatures (TS~250 to $550^{\circ}C$) on 4H-SiC have been investigated. Structural and electrical properties of GZO thin film on n-type 4H-SiC(0001) were investigated by using x-ray diffraction(XRD), atomic force microscopy(AFM), Hall effect measurement, barrier height from I-V curve and Auger electron spectroscopy(AES). XRD $2\theta$ scan shows GZO thin film has preferential orientation with c-axis perpendicular to SiC substrate surface. The lowest resistivity ($\sim1.9{\times}10^{-4}{\Omega}cm$) was observed for the GZO thin film deposited at $400^{\circ}C$. As deposition temperature increases, barrier height between GZO and SiC was increased. Whereas, resistivity of GZO thin films as well as barrier height between GZO and SiC were increased after annealing process in air atmosphere. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions and oxygen vacancy may affect the electrical properties of GZO films on SiC.

• Transactions on Electrical and Electronic Materials
• /
• 제12권5호
• /
• pp.200-203
• /
• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• 마이크로전자및패키징학회지
• /
• 제12권4호통권37호
• /
• pp.345-349
• /
• 2005

300 mW-cm의 낮은 비저항을 갖는 카본-질소$\_$텅스텐 (W-C-N) 확산방지막을 원자층 증착법으로 제조하였으며, 반응기체로 $WF_6-N_2-CH_4$를 사용하였다. $N_2$ 및 $CH_4$ 반응기체를 주입 할 때는 고주파 펄스를 인가하여 플라즈마에 의한 반응물의 분리가 일어나도록 하였다. 다층금속배선에 사용하는 층간 절연층 (TEOS) 위에서 W-C-N 박막은 원자층 증착기구를 따르며, 10에서 100 사이클 동안 증착율이 0.2nm/cycles 로 일정한 값을 가진다. 또한 Cu 배선을 위한 확산방지막으로써 W-C-N 박막은 비정질 상을 가지며, $800^{\circ}C$에서 30분간 열처리해도 Cu의 확산을 충분히 방지할 수 있음을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.899-901
• /
• 2009

The magnesium fluoride ($MgF_2$) has very higher optical transmission than oxide or nitride material applied for gas barrier, so we manufactured Mg-Zn-F films with Mg-Zn-F target mixed in the various ratio of $MgF_2$ to Zn and characterized films' properties. Zn is used to increase packing density of barrier film. Thickness and optical transmission of Mg-Zn-F are 200 nm and over 90 %, respectively. The result of water vapor transmission rate at 38, RH 90 ~ 100% of the Mg-Zn-F film deposited with 4 : 6 ($MgF_2$ : Zn) ratio target reached below $1{\times}10^{-3}g$/($m^2{\cdot}day$), measuring limit of instrument.

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
• /
• pp.228.1-228
• /
• 2003

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
• /
• pp.89-89
• /
• 1993

• Journal of Microbiology and Biotechnology
• /
• 제16권7호
• /
• pp.1053-1059
• /
• 2006

The effectiveness of a proteinaceous fibrous material formed during commercial fermentation of soy protein (PFSP) and cysteine addition were evaluated in order to improve on the properties of soy protein-based films. Nine types of films were prepared at pH 7, 9, and 11, with heat treatments at $70^{\circ}C\;and\;90^{\circ}C$ for 30 min, by casting 5% (w/w) PFSP aqueous solution, containing 2.25% (w/w) glycerol, on to polystyrene plates. The tensile strength (TS) of films ranged from 3.88 to 6.87 MPa. The highest puncture strength (PS) was observed with pH 7.0 films prepared from PFSP solution heated at $70^{\circ}C$ (P<0.05). Alkaline pH and temperature caused a decrease in both the TS and PS of the films. The thickness of films ranged from $58\;to\;74{\mu}m$. Water vapor permeabilities of the films decreased with increasing pH and temperature. To produce films from PFSP, pH value of 7.0 to 9.0 and heat treatment of $70^{\circ}C\;to\;90^{\circ}C$ were needed. A soluble nature of PFSP films in water might be useful for preparation of hot water-soluble pouches. Cysteine addition could be necessary to produce films with increased TS and enhanced barrier properties. The combination treatment that provided the best combination of barrier and mechanical properties was the PFSP film prepared at pH 7.0 with addition of 1% cysteine. The films were good oxygen barriers.

• 한국포장학회지
• /
• 제22권3호
• /
• pp.85-93
• /
• 2016

본 연구에서는 초음파합성법을 이용하여 항균성과 자외선 차단성이 있는 삼차원 꽃 모양의 구조를 가진 FZnO를 제조하였다. 제조한 FZnO 분말은 E. coli와 S. aureus에 대해 99.9%와 97.8%의 항균력을 나타내었다. 제조한 LDPE/FZnO 복합필름에 대한 FTIR 분석과 SEM 분석결과 LDPE/FZnO 복합필름이 성공적으로 만들어졌지만, LDPE 매트릭스와 FZnO 분말과의 상호작용은 약한 것으로 확인되었다. FZnO 함량이 증가할수록 자외선 차단성이 증가하는 것을 확인할 수 있었다. 또한, FZnO함량이 증가할수록 E. coli와 S. aureus에 대한 항균성이 증가하는 것을 확인하였다. 하지만, 복합필름 내 물성 극대화 및 포장소재로 적용을 위해서는 FZnO 분말과 고분자와의 혼화성 향상에 대한 추가적인 연구가 필요하다는 것을 확인하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.303.1-303.1
• /
• 2016

Polymer-like amorphous carbon films were deposited on polyethylene naphthalate (PEN) substrate by plasma-enhanced chemical vapor deposition (PECVD) and their water vapor transmission rates (WVTR) were tested. propane was used as precursors. To make a polymer-like amorphous carbon film the deposition rate, surface roughness, light transmittance, and WVTR of the films were characterized as a function of the precursor feed ratio and plasma power. The water vapor transmission rates of bare PEN film and single layer PAC on PEN substrate were 6.95 g/m2/day and 0.3 g/m2/day, respectively. The superior property the water vapor permeability of thin layers of PAC was attributed to uniform coverage and good adhesion between PAC film and PEN substrate.