• Food Science and Biotechnology
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• 제14권1호
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• pp.68-72
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• 2005

Moisture sorption characteristics of edible composite films were determined and compared against moisture barrier properties. Edible composite films were Z1 (zein film with polyethylene glycol(PEG) and glycerol), Z2 (zein film with oleic acid), ZA1 (zein-coated high amylose corn starch film with PEG and glycerol), and ZA2 (zein-coated high amylose corn starch film with oleic acid). Z2 film showed the lowest equilibrium moisture content (EMC), monolayer value ($W_m$), water vapor permeability (WVP), and water solubility (WS). Surface structure of Z2 was relatively denser and finer than that of other edible films. GAB $W_m$ and C values decreased, while K values increased with increasing temperature. Correlation coefficients of WS:EMC and WVP:EMC at Aw 0.75 were higher than those of WS: $W_m$ and WVP: $W_m$, respectively. EMC values at Aw 0.75 appeared useful for evaluating or predicting moisture barrier properties of edible films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1722-1725
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• 2007

We will discuss and compare the different ways to manufacture high performance Barix coated barrier films as a substrate for displays: R2R vs Batch. It will be shown that the barrier performance of the Barix coating on plastic can be as good as on glass substrates. More then 1000 hrs of testing at 60C/90RH can be passed without degradation of Ca samples

• 박물관보존과학
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• 제16권
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• pp.96-113
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• 2015

고차단성 필름(Barrier films)은 문화재의 안전한 보존환경을 조성하기 위해 산소와 수분을 차단하는 수단으로 사용되고 있다. 1990년대부터 사용된 고차단성 필름 중 가장 대중적으로 사용해 온 제품은 일본 M 社의 E 필름을 들 수 있다. 그러나 수입품으로서 비교적 고가의 가격대를 형성하며 구성 재질의 특성과 보존환경 제어 체계에 대한 정보가 부족한 실정임에도 관련 연구나 유사 제품군의 비교가 미진했다고 볼 수 있다. 근간 국산 고차단성 필름의 제조 기술력은 첨단산업분야의 발달과 더불어 향상되어 왔기 때문에 제품별 특성을 파악하여 문화재 보존환경 제어에 적합한 필름을 찾고자 하였다. 비교 제품군으로 일본 M 사(社)의 E필름과 함께 국내에서 제작된 전자제품 포장용 필름, 실험을 위해 특수 제조한 필름, Zipper bag 형태의 필름 등 총 5종의 필름을 선정하였다. 실험은 필름의 단면, 재질별 두께, 인장강도 및 연신율, 자외·가시광 흡광도, 황변도, 산소 및 수증기 투과도를 측정하여 물성과 기체 차단력을 비교하였고 이를 바탕으로 온·습도 재현실험을 통해 실사용 시 외부 환경과 사용 기간에 따른 변화를 관찰하였다. 그 결과, 실험에 사용된 국산 고차단성 필름은 문화재 밀폐 포장용으로 적용이 가능하고 Zipper bag 형태의 P 필름은 문화재 보관 용도에 적절하지 않았다. 또한 재현실험을 바탕으로 각 필름의 밀폐 포장 시 적정 사용 기간을 검토하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.394-394
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• 2012

We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• 한국포장학회지
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• 제3권2호
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• pp.3-16
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• 1996

This study was investigated to the effect of oxygen barrier of four different packaging films of the shelf life of proessed meat product by the simulated distribution test and storage test. The microbial growth, pH, VBN content, TBA value, color change and sensory evaluation were compared during the 2-month storage period at 4, 10, $20^{\circ}C$ after finished the simulated distribution test. The oxygen transmission rates ($cc/m^2$ day) were BF001: 27,88; BF003; 12.30;NY; 77.98; EVOM; 0.41 respectively. The packaging films were not effected on the changes of pH, VBN content, TBA value and color during the storage period. The aerobic microbial growth was increased only at $20^{\circ}C$ in the order of growth rate in the following films;NY > BF001 > BF003 > EVOH. Therefore, the microbial growth was affected significantly by the properties of oxygen barrier off packaging films and it should be an indicator of establishing the shelf life processed meat product.

• 한국식품과학회지
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• 제39권2호
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• pp.158-163
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• 2007

본 연구는 curdlan 복합필름을 제조하고 물성을 비교하기 위해 수행되었다. 우선 low set 방식과 high set 방식 중 적절한 방식을 선정하였고, 순차적으로 AMG나 oleic acid 중에서 적절한 방습소재를 선정하였으며, PB와 PIB 중에서 적절한 물성개량제를 선정하고자 하였다. 그 결과 high set 필름이 low set 필름보다 신장율은 다소 작지만 인장강도가 높고 수증기 투과도가 낮기 때문에 curdlan 복합필름 제조에는 high set 방법이 더 적합하며 이때 PEG는 2.0g 첨가하는 것이 유리할 것으로 판단하였다. 또한 oleic acid 첨가군이 AMG 첨가군보다 인장강도와 신장율이 더 크고, 수증기투과도는 더 낮은 편이며 특히 oleic acid 0.3g 첨가한 경우 신장율과 수증기 차단성 면에서 유리하므로 방습소재로서 oleic acid를 0.3g 첨가하는 것이 적합할 것을 판단하였다. PIB 첨가군이나 PB 첨가군 모두 인장강도와 수증기투과도는 비슷하나 신장율의 경우는 PIB 첨가군이 PB 첨가군보다 더 큰 것으로 나타났으므로 유연성과 관련된 물성개량 측면에서는 PIB 첨가가 더 유리할 것으로 판단하였다. 종합적으로 curdlan에 가소제 PEG와 방습소재 oleic acid와 물성개량제 PIB를 첨가하는 것이 유연성과 관련된 물성 면에서 가장 유리할 것으로 판단하였다.

• 한국재료학회지
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• 제6권7호
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• The Korean Journal of Ceramics
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• 제2권2호
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).