• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.286-290
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• 2020

The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.

• Nuclear Engineering and Technology
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• v.50 no.5
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• pp.724-730
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• 2018

Chromium and chromium nitride were selected as potential barriers to prevent fuel-clad chemical interaction (FCCI) between the cladding and the fuel material. In this study, ferritic/martensitic HT-9 steel and misch metal were used to simulate the reaction between the cladding and fuel fission product, respectively. Radio frequency magnetron sputtering was used to deposit Cr and CrN films onto the cladding, and the gas flow rates of argon and nitrogen were fixed at certain values for each sample to control the deposition rate and the crystal structure of the films. The samples were heated for 24 h at 933 K through the diffusion couple test, and considerable amount of interdiffusion (max. thickness: $550{\mu}m$) occurred at the interface between HT-9 and misch metal when the argon and nitrogen were used individually. The elemental contents of misch metal were detected at the HT-9 through energy dispersive X-ray spectroscopy due to the interdiffusion. However, the specimens that were sputtered by mixed gases (Ar and $N_2$) exhibited excellent resistance to FCCI. The thickness of these CrN films were only $4{\mu}m$, but these films effectively prevented the FCCI due to their high adhesion strength (frictional force ${\geq}1,200{\mu}m$) and dense columnar microstructures.

• Journal of the Semiconductor & Display Technology
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• v.8 no.2
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• pp.49-53
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• 2009

The oxygen barrier films were formed on poly(ethylene terephthalate) (PET) substrate by a sol-gel process using 3-aminoproprytrimethoxysilane (APTMOS). The effects of solvent type, coating times and incorporation of fumed silica on oxygen permeability coefficient were investigated. The APTMOS coating film prepared from methanol as a solvent exhibited higher oxygen barrier properties than that using THF. The oxygen permeability coefficient of coated film with APTMOS/methanol by coating 7 times was measured to be $2.28{\times}10^{-6}$, while that of PET film was $1.16{\times}10^{-4}$ GPU. The addition of fumed silica does not affect the oxygen barrier properties. It may be explained that silica particles disrupt chain packing, which leads to an increase in free volume for permeation.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.32-35
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• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.97-103
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• 2023

Barrier films for transparent packaging materials with excellent moisture barrier properties are prepared, utilizing a nanoclay dispersion coating layer formed after a pretreatment process of plasma activation surface treatment process under vacuum at room temperature. Attention is paid on optimizing the coupling additive through the appropriate crosslinking process and optimal dispersion process of the coating process to enhance adhesion. Analysis of the functional coating thin film shows that the water vapor transmission rate is less than 10 g/m²/24 hrs (ASTM F-1249) and the oxygen transmission rate is less than 30 cc/m²/24 hrs (ASTM D3985). It is shown that water barrier properties of coating thin film prepared in this study are greater than conventional untreated films by 10 times or more. The thickness of the transparent gas barrier film is within 0.1 mm, and the transparent gas barrier complex is implemented in two layers. In the study of PET thin film interface characteristics, FT-IR experimental analysis shows the reaction activity was optimized at RDS 1.125 %.

• Polymer(Korea)
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• v.37 no.5
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• pp.579-586
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• 2013

Poly(vinyl alcohol)(PVA) nanocomposite films containing various saponite (SPT) clay contents were synthesized using a solution intercalation method. The thermal property, morphology, optical transparency, and gas permeability of the PVA nanocomposite films with various SPT contents in the range of 0 to 10 wt% were examined. PVA nanocomposite film containing 5 wt% SPT showed excellent thermal and gas barrier property. The hybrid films containing 5 wt% SPT were equibiaxially stretched with stretching ratios ranging from 150 to 250%. The clay dispersion, optical transparency, and gas permeability were also examined as a function of equibiaxial stretching ratio. The PVA nanocomposite films with various equibiaxial stretching ratios showed excellent optical transparency and barrier to oxygen permeability.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Journal of Microbiology and Biotechnology
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• v.17 no.3
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• pp.520-523
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• 2007

Edible films of gelatin and com zein were prepared by incorporating nisin to the film-forming solutions. Com zein film with nisin of 12,000 IU/ml had an increase of 11.6 MPa in tensile strength compared with the control, whereas gelatin film had a slight increase with the increase of nisin concentration added. Water vapor permeability for both com zein and gelatin films decreased with the increase of nisin concentration, thus providing a better barrier against water. Antimicrobial activity against Listeria monocytogenes increased with the increase of nisin concentration, resulting in 1.4 log cycle reduction for com zein film and 0.6 log cycle reduction for gelatin film at 12,000 IU/ml. These results suggest that incorporation of nisin into com zein and gelatin films improve the physical properties of the films as well as antimicrobial activity against pathogenic bacteria during storage, resulting in extension of the shelf life of food products by providing with antimicrobial edible packaging films.

• Food Science and Biotechnology
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• v.14 no.1
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• pp.112-116
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• 2005

Composite films were prepared with soy protein isolate (SPI) and various clay minerals by casting from polymer and clay water suspension. Effects of clay minerals on film thickness, moisture content (MC), tensile strength (TS), elongation at break (E), water vapor permeability (WVP), and water solubility (WS) were tested. Properties including thickness, surface smoothness, and homogeneity of films prepared with organically modified montmorillonite (O-MMT), Wamok clay (W-clay), bentonite, talc powder, and zeolite were comparable to those of control SPI films. TS increased significantly (p<0.05) in films prepared with O-MMT and bentonite, while WVP decreased significantly (p<0.05) in bentonite-added films. WS of most nanocomposite films decreased significantly (p<0.05).