• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.121-124
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• 2012

The characteristics of Ga-doped zinc oxide (GZO) thin films deposited at different deposition temperatures (TS~250 to $550^{\circ}C$) on 4H-SiC have been investigated. Structural and electrical properties of GZO thin film on n-type 4H-SiC(0001) were investigated by using x-ray diffraction(XRD), atomic force microscopy(AFM), Hall effect measurement, barrier height from I-V curve and Auger electron spectroscopy(AES). XRD $2\theta$ scan shows GZO thin film has preferential orientation with c-axis perpendicular to SiC substrate surface. The lowest resistivity ($\sim1.9{\times}10^{-4}{\Omega}cm$) was observed for the GZO thin film deposited at $400^{\circ}C$. As deposition temperature increases, barrier height between GZO and SiC was increased. Whereas, resistivity of GZO thin films as well as barrier height between GZO and SiC were increased after annealing process in air atmosphere. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions and oxygen vacancy may affect the electrical properties of GZO films on SiC.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.345-349
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• 2005

Low resistive ($300{\mu}{\Omega}$-cm) W-C-N films have been deposited on tetraethylorthosilicate (TEOS) interlayer dielectric by atomic layer deposition (ALD) with $WF_6-N_2-CH_4$ gas. The exposure cycles of $N_2$ and $CH_4$ are synchronized with pulse plasma. The W-C-N films on TEOS layer follow the ALD mechanism and keep constant deposition rate of 0.2 nm/cycle from 10 to 100 cycles. As a diffusion barrier for Cu interconnection the W-C-N films maintain amorphous phase and Cu inter-diffusion is not occurred even at $800^{\circ}C$ for 30 min.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.899-901
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• 2009

The magnesium fluoride ($MgF_2$) has very higher optical transmission than oxide or nitride material applied for gas barrier, so we manufactured Mg-Zn-F films with Mg-Zn-F target mixed in the various ratio of $MgF_2$ to Zn and characterized films' properties. Zn is used to increase packing density of barrier film. Thickness and optical transmission of Mg-Zn-F are 200 nm and over 90 %, respectively. The result of water vapor transmission rate at 38, RH 90 ~ 100% of the Mg-Zn-F film deposited with 4 : 6 ($MgF_2$ : Zn) ratio target reached below $1{\times}10^{-3}g$/($m^2{\cdot}day$), measuring limit of instrument.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.228.1-228
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.89-89
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• 1993

• Journal of Microbiology and Biotechnology
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• v.16 no.7
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• pp.1053-1059
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• 2006

The effectiveness of a proteinaceous fibrous material formed during commercial fermentation of soy protein (PFSP) and cysteine addition were evaluated in order to improve on the properties of soy protein-based films. Nine types of films were prepared at pH 7, 9, and 11, with heat treatments at $70^{\circ}C\;and\;90^{\circ}C$ for 30 min, by casting 5% (w/w) PFSP aqueous solution, containing 2.25% (w/w) glycerol, on to polystyrene plates. The tensile strength (TS) of films ranged from 3.88 to 6.87 MPa. The highest puncture strength (PS) was observed with pH 7.0 films prepared from PFSP solution heated at $70^{\circ}C$ (P<0.05). Alkaline pH and temperature caused a decrease in both the TS and PS of the films. The thickness of films ranged from $58\;to\;74{\mu}m$. Water vapor permeabilities of the films decreased with increasing pH and temperature. To produce films from PFSP, pH value of 7.0 to 9.0 and heat treatment of $70^{\circ}C\;to\;90^{\circ}C$ were needed. A soluble nature of PFSP films in water might be useful for preparation of hot water-soluble pouches. Cysteine addition could be necessary to produce films with increased TS and enhanced barrier properties. The combination treatment that provided the best combination of barrier and mechanical properties was the PFSP film prepared at pH 7.0 with addition of 1% cysteine. The films were good oxygen barriers.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.22 no.3
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• pp.85-93
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• 2016

Flower-like zinc oxide (FZnO) was successfully synthesized via a sonochemical process. The chemical structure, morphology, and antimicrobial properties of as- prepared FZnO were investigated. Additionally, pure LDPE and five different LDPE/FZnO composite films were prepared with different FZnO content by using a twin screw extruder. According to the FTIR and SEM analyses, there exists weak interfacial interaction between LDPE and FZnO. Compared with pure LDPE, the LDPE/FZnO composite films showed UV barrier and enhanced antimicrobial activity against Escherichia coli (E. coli) as a Gram-negative micro-organism and Staphylococcus aureus (S. aureus) as a Gram-positive micro-organism. To enhance the interfacial interaction and good dispersion of FZnO into the LDPE matrix, and resultantly to such as UV barrier and antimicrobial properties of LDPE/FZnO composite films as the packaging materials, further efforts are required.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.303.1-303.1
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• 2016

Polymer-like amorphous carbon films were deposited on polyethylene naphthalate (PEN) substrate by plasma-enhanced chemical vapor deposition (PECVD) and their water vapor transmission rates (WVTR) were tested. propane was used as precursors. To make a polymer-like amorphous carbon film the deposition rate, surface roughness, light transmittance, and WVTR of the films were characterized as a function of the precursor feed ratio and plasma power. The water vapor transmission rates of bare PEN film and single layer PAC on PEN substrate were 6.95 g/m2/day and 0.3 g/m2/day, respectively. The superior property the water vapor permeability of thin layers of PAC was attributed to uniform coverage and good adhesion between PAC film and PEN substrate.