• Steel and Composite Structures
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• v.22 no.4
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• pp.777-796
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• 2016

In this paper, the behavior of woven E-glass fabric composite laminate was experimentally investigated under quasi-static indentation and high velocity impact by flat-ended, hemispherical, conical (cone angle of $37^{\circ}$ and $90^{\circ}$) and ogival (CRH of 1.5 and 2.5) cylindrical perforators. Moreover, the results are compared in order to explore the possibility of extending quasi-static indentation test results to high velocity impact test results in different characteristics such as perforation mechanisms, performance of perforators, energy absorption, friction force, etc. The effects of perforator nose shape, nose length and nose-shank connection shapes were investigated. The results showed that the quasi-static indentation test has a great ability to predict the high velocity impact behavior of the composite laminates especially in several characteristics such as perforation mechanisms, perforator performance. In both experiments, the highest performance occurs for 2.5 CRH projectile and the lowest is related to blunt projectiles. The results show that sharp perforators indicate lower values of dynamic enhancement factor and the flat-ended perforator represents the maximum dynamic enhancement factor among other perforators. Moreover, damage propagation far more occurred in high velocity impact tests then quasi-static tests. The highest damage area is mostly observed in ballistic limit of each projectile which projectile deviation strongly increases this area.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.115-120
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• 2008

Carrier velocity in the MOSFET channel is the main driving force for improved transistor performance with scaling. We report measurements of the drift velocity of electrons and holes in silicon inversion layers. A technique for extracting effective carrier velocity which is a more accurate extraction method based on the actual inversion charge measurement is used. This method gives more accurate result over the whole range of $V_{ds}$, because it does not assume a linear approximation to obtain the inversion charge and it does not limit the range of applicable $V_{ds}$. For a very short channel length device, the electron velocity overshoot is observed at room temperature in 37 nm MOSFETs while no hole velocity overshoot is observed down to 36 nm. The electron velocity of short channel device was found to be strongly dependent on the longitudinal field.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.123-127
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• 2015

Soda-lime silicate (SLS) glass was strengthened by ion exchange for application of thin and lightweight bulletproof windows. The optimal conditions for ion exchanged SLS glass (thickness of 3 and 10 mm) at $480^{\circ}C$ were 10 and 17 min, respectively. The Vickers hardness values of the strengthened SLS glass samples with thicknesses of 3 and 10 mm were $5.9{\pm}0.22$ and $6.7{\pm}0.17GPa$, respectively, which values were about 22% higher than those of parent SLS glass. By laminating a multilayer defense film and polycarbonate sheet with ion exchanged SLS glass, we were able to make a thin and lightweight bulletproof window (24.25 mm, 4.57 kg, $50.06kg/m^2$, $V_{50}$ 901.8 m/s). As a result, the thickness of the bulletproof window was decreased by about 39% from 40 to 24.25 mm. The light transmittance in the visible range satisfied the standard (over 76%) for bulletproof windows.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.615-624
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• 2014

In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger band-structure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMG-CNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS'10 requirements better than CNTs.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.46 no.3
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• pp.257-268
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• 2018

We have studied the damage mechanism of a metallic thin plate by the highly energetic fragments generated from high explosive(HE) warhead. The penetration process has presumed that the velocity of a fragment is in the range of 350 m/s to 3353 m/s, the thickness of Aluminum 2024 target plate is in the range of 1 mm~6.3 mm thick. The mass of fragment with hemisphere nose shape is in the range of 0.32 g to 16 g. The analytical solution for penetration process has been derived by using the report of the project THOR. The results of analysis implied that the closed forms by an exponentially decay function well fit the change of the ballistic limit velocity, loss velocity and loss mass of fragment as the mass of fragment and the thickness of target plate increase.