• Title/Summary/Keyword: Backscattering

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system performance with different fiber structures in Raman ampliffer (라만 증폭기에서 광섬유 구조에 따른 성능 분석)

  • 박재형;민범기;박남규
    • Korean Journal of Optics and Photonics
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    • v.12 no.2
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    • pp.121-128
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    • 2001
  • We examine the performance of a Raman amplifier as a function of fiber structure with respect to amplifier gain and double Rayleigh crosstalk penalty. Variations on fiber core radius or index affect both the Raman gain efficiency and Rayleigh backscattering. Contrary to the common concept, the penalty from the doubly amplified Rayleigh scattering could exceed the benefits of higher gain efficiency of small effective area fibers. Appropriate fiber designing parameters are required to increase Raman amplifier efficiency without system penalties. lties.

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Effect of the Amplitude in Ultrasonic Nano-crystalline Surface Modification on the Corrosion Properties of Alloy 600

  • Kim, Ki Tae;Kim, Young Sik
    • Corrosion Science and Technology
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    • v.18 no.5
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    • pp.196-205
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    • 2019
  • Surface modification techniques are known to improve SCC by adding large compressive residual stresses to metal surfaces. This surface modification technology is attracting attention because it is an economical and practical technology compared to the maintenance method of existing nuclear power plants. Surface modification techniques include laser, water jet and ultrasonic peening, pinning and ultrasonic Nano-crystal surface modification (UNSM). The focus of this study was on the effect of ultrasonic amplitude in UNSM treatment on the corrosion properties of Alloy 600. A microstructure analysis was conducted using an optical microscope (OM), scanning electron microscope (SEM) and electron backscattering diffraction (EBSD). A cyclic polarization test and AC-impedance measurement were both used to analyze the corrosion properties. UNSM treatment influences the corrosion resistance of Alloy 600 depending on its amplitude. Below the critical amplitude value, the pitting corrosion properties are improved by grain refinement and compressive residual stress, but above the critical amplitude value, crevices are formed by the formation of overlapped waves. These crevices act as corrosion initiators, reducing pitting corrosion resistance.

Microstructural Control of Al-Sn Alloy with Addition of Cu and Si (Cu와 Si 첨가에 의한 Al-Sn 합금의 미세조직 제어)

  • Son, Kwang Suk;Park, Tae Eun;Kim, Jin Soo;Kang, Sung Min;Kim, Tae Hwan;Kim, Donggyu
    • Korean Journal of Metals and Materials
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    • v.48 no.3
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    • pp.248-255
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    • 2010
  • The effect of various alloying elements and melt treatment on the microstructural control of Al-Sn metallic bearing alloy was investigated. The thickness of tin film crystallized around primary aluminum decreased with the addition of 5% Cu in Al-Sn alloy, with tin particles being reduced in size by intervening the Ostwald ripening. With the addition of Si in Al-10%Sn alloy, the tin particles were crystallized with eutectic silicon, resulting in uniform distribution of tin particles. With the addition of Cu and Si in Al-Sn alloy, both the tensile strength and yield strength increased, with the increasing rate of yield strength being less than that of tensile strength. Although the Al-10%Sn-7%Si alloy has similar tensile strength compared with Al-10%Sn-5%Cu, the former showed superior abrasion resistance, resulting from preventing the tin particles from movement to the abrasion surface.

Distribution characteristics of Antarctic silverfish (Pleuragramma antarcticum) in the Ross Sea, Antarctica (남극 로스해에 서식하는 남극 은암치(Pleuragramma antarcticum)의 분포 특성)

  • Sara LEE;Wooseok OH;Hyoungsul LA;Wuju SON;Jeong-Hoon KIM;Kyounghoon, LEE
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.59 no.2
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    • pp.117-124
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    • 2023
  • This study used hydroacoustic method to identify the vertical and horizontal distribution of Antarctic silverfish in the Ross Sea, Antarctica. In February and December 2018, Antarctic silverfish was detected up to 250 meters, and was mainly distributed in water depths of 20 to 30 meters. The horizontal distribution of Antarctic silverfish was mostly undetected in February, and December showed a relatively stronger distribution than that of February. Antarctic silverfish is characterized by their distribution near sea ice.

Comparative Measurements and Characteristics of Cu Diffusion into Low-Dielectric Constant para-xylene based Plasma Polymer Thin Films

  • Kim, K.J.;Kim, K.S.;Jang, Y.C.;Lee, N.-E.;Choi, J.;Jung, D.
    • Journal of the Korean institute of surface engineering
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    • v.34 no.5
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    • pp.475-480
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    • 2001
  • Diffusion of Cu into the low-k para-xylene based plasma polymer (pXPP) thin films deposited by plasma-enhanced chemical vapor deposition using the para-xylene precursor was comparatively measured using various methods. Cu layer was deposited on the surfaces of pXPPs treated by $N_2$ plasma generated in a magnetically enhanced inductively coupled plasma reactor. Diffusion characteristics of Cu into pXPPs were measured using Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), cross-sectional transmission electron microscopy (XTEM), and current-voltage (I-V) measurements for the vacuum-annealed Cu/pXPPs for 1 hour at $450^{\circ}C$ and were compared. The results showed a correlation between the I-V measurement and SIMS data are correlated and have a sensitivity enough to evaluate the dielectric properties but the RBS or XTEM measurements are not sufficient to conclude the electrical properties of low-k dielectrics with Cu in the film bulk. The additional results indicate that the pXPP layers are quite resistant to Cu diffusion at the annealing temperature of $450^{\circ}C$ compared to the other previously reported organic low-k materials.

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Research Trend of Topological Insulator Materials and Devices (위상절연체 소재 및 소자 기술 개발 동향)

  • W.J. Lee;T.H. Hwang;D.H. Cho;Y.D. Chung
    • Electronics and Telecommunications Trends
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    • v.38 no.1
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    • pp.17-25
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    • 2023
  • Topological insulators (TIs) emerge as one of the most fascinating and amazing material in physics and electronics. TIs intrinsically possess both gapless conducting surface and insulating internal properties, instead of being only one property such as conducting, semiconducting, and insulating. The conducting surface state of TIs is the consequence of band inversion induced by strong spin-orbit coupling. Combined with broken inversion symmetry, the surface electronic band structure consists of spin helical Dirac cone, which allows spin of carriers governed by the direction of its momentum, and prohibits backscattering of the carriers. It is called by topological surface states (TSS). In this paper, we investigated the TIs materials and their unique properties and denoted the fabrication method of TIs such as deposition and exfoliation techniques. Since it is hard to observe the TSS, we introduced several specialized analysis tools such as angle-resolved photoemission spectroscopy, spin-momentum locking, and weak antilocalization. Finally, we reviewed the various fields to utilize the unique properties of TIs and summarized research trends of their applications.

Edge-Effect Reduction Technique to Compute the Backscattering from Randomly Rough Conducting Surfaces (거친 도체 표면 후방 산란 계산을 위한 모서리 효과 저감 기법)

  • Hwang, Ji-Hwan;Kweon, Soon-Koo;Oh, Yisok
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.5
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    • pp.585-591
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    • 2014
  • An improved numerical scattering model with the 2-dimensional moment method including roof-top basis and a modified window-function to reduce edge-effect is presented in this study. The roof-top basis function is used to depict randomly positioned surface currents and increase an efficiency of the moment method. To reduce the edge-effect which occurs at the end of numerically generated surfaces, an enhanced window-function which is weighted by incident angle variable is proposed. To validate an proposed 2-dimensional scattering model and numerical analysis techniques for randomly rough surfaces, computational results are compared and analyzed to SPM(Small Perturbation Model) as well.

Determination of Layer Thickness of A/B Type Multilayer Films in SIMS Depth Profiling Analysis

  • Hwang, Hyun-Hye;Jang, Jong-Shik;Kang, Hee-Jae;Kim, Kyung-Joong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.231-231
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    • 2012
  • Correct determination of the interface locations is critical for the calibration of the depth scale and measurement of layer thickness in SIMS depth profiling analysis of multilayer films. However, the interface locations are difficult to determine due to the unwanted distortion from the real ones by the several effects due to sputtering with energetic ions. In this study, the layer thicknesses of Si/Ge and Si/Ti multilayer films were measured by SIMS depth profiling analysis using the oxygen and cesium primary ion beam. The interface locations in the multilayer films could be determined by two methods. The interfaces can be determined by the 50 at% definition where the atomic fractions of the constituent layer elements drop or rise to 50 at% at the interfaces. In this method, the raw depth profiles were converted to compositional depth profiles through the two-step conversion process using the alloy reference relative sensitivity factors (AR-RSF) determined by the alloy reference films with well-known compositions determined by Rutherford backscattering spectroscopy (RBS). The interface locations of the Si/Ge and Si/Ti multilayer films were also determined from the intensities of the interfacial composited ions (SiGe+, SiTi+). The determination of the interface locations from the composited ions was found to be difficult to apply due to the small intensity and the unclear variation at the interfaces.

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PECVD를 통해 향상된 SiN/SiO2/ITO 다층박막의 무반사 효과에 대한 연구

  • Choe, Min-Jun;Gwon, Se-Ra;Song, Ae-Ran;Jeong, Gwon-Beom;An, Gyeong-Jun;Baek, Ju-Yeol;Kim, Bu-Gyeong;Jang, Hyeok-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.274-274
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    • 2016
  • 터치스크린패널로 응용하기 위하여 80%이상의 높은 투과도와 낮은 저항이 요구된다. 그 중에서도 무반사 효과 (anti-reflective, AR) 를 크게하여 투과도를 향상시키는 방법으로 나노구조물, 증착시 경사각, 다층박막 방법 등이 연구 개발되고 있다. 단일 박막을 이용하여 무반사 코팅을 하는 경우, 정밀한 굴절률 조절이 어려우며 낮은 반사율 영역의 선폭이 좁은 단점이 있다. 반면, 저/고굴절률 다층박막의 경우 비교적 굴절률 조절이 용이하고 가시광영역 전반적으로 높은 투과도를 가질 수 있다. plasma enhanced chemical vapor deposition (PECVD) 증착법을 이용하여 무반사 효과를 증대시키기 위해 저/고굴절률 다층구조의 박막을 두께조합에 따라 평가하였으며, 가장 널리 사용되고 있는 Sputtering증착법과 비교하여 연구하였다. 제작된 다층박막의 구조는 glass(sub.)/SiN/SiO2/ITO 이며, 무반사 코팅층인 SiN/SiO2층은 각각 PECVD와 Sputtering 증착법을 통해 성장되었고, ITO는 스퍼터링 증착법을 이용하여 동일하게 성장하였다. 그 결과 PECVD 증착법이 Sputtering 증착법에 비하여 가시광영역(400~800nm)에서 더 높은 투과도를 얻게 되었다. 결과의 차이에 대해서 PECVD 증착법과 Sputtering 증착법으로 성장된 SiN, SiO2 박막의 광학적 특성과 물리적 특성의 변화를 spectroscopic ellipsometry (SE), Rutherford backscattering (RBS), atomic force microscopy (AFM) 을 이용하여 비교, 분석하였다.

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저온 선형 PECVD를 이용한 OLED용 Encapsulation 특성 연구

  • Yun, Seung-Jin;Kim, Seong-Jin;Choe, Jeong-Su;Jo, Byeong-Seong;Jeong, Seok-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.180-180
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    • 2016
  • 최근 디스플레이 시장의 주요 키워드는 flexible organic light emitting diode (OLED) 이다. OLED 소자의 수명을 결정하는 가장 큰 요인 중의 하나는 공기 중의 O2와 H2O에 의한 유기물의 열화이다. 따라서 공기 중의 O2나 H2O가 유기물에 쉽게 침투하는 것을 막는 것은 소자의 수명 향상을 위하여 필수적이라 할 수 있다[1-3]. SiNx 박막은 경질로 투과성이 우수하며, 화학적 불활성인 특성으로 이러한 Barrier 역할로 연구되어 산업분야에 다양하게 응용되고 있다[4]. SiNx 박막은 일반적으로 plasma enhanced chemical vapor deposition (PECVD) 기술을 이용하여 증착되는데 기존의 PECVD 기술을 이용한 SiNx 박막은 낮은 water vapor transmission rate (WVTR) 등의 문제점들로 인해 한계점이 들어났다. 본 연구에서는, flexible display의 thin film encapsulation (TFE) 공정에서의 적용을 알아보기 위해 $370{\times}470$ size를 증착할 수 있는 In-line 장비를 이용하였으며, 기존의 PECVD 기술의 문제점으로 지적되고 있는 낮은 WVTR을 해결하기 위하여 저온 (<$100^{\circ}C$) 선형 PECVD 기술을 이용하여 WVTR을 개선하고자 하였다. 공정가스로는 SiH4와 NH3를 사용하였으며, SiH4 Carrier 가스로 He을 추가적으로 사용하였다. 또한 공정 압력은 100mTorr를 유지하였다. 증착된 SiNx 박막의 물리적, 화학적 특성 분석을 위해 분광엘립소메타, field emission electron microscopy (FESEM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) 등을 이용하여 측정하였으며, 박막에 투습되는 수분의 양은 MOCON사의 AQUATRAN 2(W)로 측정하였다. OLED 소자를 구현하기 위해서는 기본적으로 봉지층에 투습되는 양을 $10-6g/m2{\cdot}day$ 이하로 막아줘야 한다고 알려져 있으나, 기존의 PECVD 기술을 이용하여 제작된 SiNx 박막의 WVTR은 $10-2{\sim}10-3g/m2{\cdot}day$ 레벨의 WVTR 결과를 보이고 있다. 본 연구에서 사용된 저온 선형 PECVD 기술을 이용하여 제작된 SiNx 박막의 WVTR은 $5.0{\times}10-5g/m2{\cdot}day$ 이하의 개선된 결과를 확인 할 수 있었다. 또한 flexible display에 적용하기 위해 SiNx 박막의 두께를 최소화한 100nm의 두께에서도 WVTR은 $5.0{\times}10-5g/m2{\cdot}day$ 이하의 결과가 유지됨을 알 수 있었다.

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