• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.554-562
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• 2012

Processing of Scanning electron microscope imaging has been analyzed in both secondary electron (SE) imaging and backscattered electron (BSE) image. Because of unique characteristics of both secondary electron and backscattered electron image, mechanism of imaging process and image quality are quite different each other. For the sake of characterize imaging process, Monte Carlo simulation code have been developed. It simulates electron penetration and depth profile in certain material. In addition, secondary electron and backscattered electron generation process as well as their spatial distribution and energy characteristics can be simulated. Geometries that has fundamental feature have been imaged using the developed Monte Carlo code. Two, SE and BSE images generation process will be discussed. BSE imaging process can be readily used to discriminate in both material and geometry by simply changing position and direction of BSE detector. The developed MC code could be useful to design BSE detector and their position. Furthermore, surface reconstruction technique is possibly developed at the further research efforts. Basics of Monte Carlo simulation method will be discussed as well as characteristics of SE and BSE images.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.710-715
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• 1995

Magnetic domains were observed using an image lock-in technique for backscattered electron contrast (Type II) with a 200 kV scanning electron microscope. Backscattered electrons indicate a difference in magnetic domain structures at the upper and lower parts of the upper pole in thin-film heads, changing the acceleration voltage. With this method, it is also possible to observe the domain structure of the thin-film head pole through a 10 to $20\;\mu\textrm{m}$ protective layer, and the upper shield of the MR head through the coil in the resist, alumina overcoat, and upper pole.

• Applied Microscopy
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• v.45 no.4
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• pp.218-224
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• 2015

A technical overview on the various sample preparation methods for electron backscattered diffraction (EBSD) analysis is carried out. The mechanical polishing with colloidal silica finish, electro-chemical polishing, dual layer coating and ion beam milling are introduced for the common sample preparation methods for EBSD observation and some issues that are frequently neglected by the common EBSD users but should be considered to get a reliable EBSD data are discussed. This overview would be especially helpful to the people who know what EBSD technique is but do not get a reliable EBSD data because of difficulties in sample preparation.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.513-517
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• 2004

The nature of the signals collected by an SEM(Scanning Electron Microscope) in order to form images are all dependent on the detector used to collect them, and the quality of an acquired image is strongly influenced by detector performance. Therefore, the development of detector with high performance is very important in pulling up the resolution of SEM. In this article, electron beam-specimen interactions, the detection principle of secondary electrons and backscattered electrons, and the structure of a conventional detector are described. The structure of an experimental apparatus for the future study on our hopeful novel electron detector is presented as well.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.5
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• pp.52-57
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• 2008

Most of the electrons emitted from the filament, are captured by the anode. The portion of the electron current that leaves the gun through the hole in the anode is called the beam current. Electron beam probe is called the focused beam on the specimen. Because of the lenes and aperture, the probe current becomes smaller than the beam current. It generate various signals(backscattered electron, secondary electron) in an interaction with the specimen atoms. Backscattered electron provide an useful signal for composition and local specimen surface inclination. Secondary electron is used far the formation of surface imagination. The steady electron beam probe is very important for the imagination formation and the brightness. In this paper, we show the results of developed elements that create electron beam probe and the measured beam probe in various acceleration voltages by Faraday cup. These data are used to analysis and improve the performance of the system in the development.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.352-355
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• 2007

Polycrystalline materials such as steels(BCC) and aluminum alloys(FCC) show the strain hardening and the strain rate hardening during the plastic deformation. The strain hardening is induced by deformation resistance of dislocation glide on some crystallographic systems and increase of the dislocation density on grain boundaries or inner grain. However, the phenomenon of the strain rate hardening is not demonstrated distinctly. In this paper, tensile tests for various strain rates are performed in the rage of $10^{-2}$ to $10^2s^{-1}$ then, specimens are extracted on the same strain position to investigate the microscopic behavior of deformed materials. The extracted specimen is investigated by using the electron backscattered diffraction(EBSD) and transmission electron microscopy(TEM) results which contain grain size, grain shape, aspect ratio and dislocation substructure.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.11a
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• pp.290-290
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• 2005

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.1
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• pp.23-31
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• 2016

In this study, we modified the conventional tensile split Hopkinson bar(TSHB) apparatus typically used for the high strength steel to evaluate the tensile deformation behavior of soft metallic sheet materials under high strain rates. Stress-strain curves of high purity single and multi-crystalline materials were obtained using this experimental procedure. Grain morphology and initial crystallographic orientation were characterized by EBSD(Electron Backscattered Diffraction) method measured in a FE-SEM(Field emission-scanning electron microscopy). The fractured surfaces were observed by using optical microscopy. The relationship between plastic deformation of aluminum crystalline materials under high-strain rates and the initial microstructure and the crystallographic orientations has been addressed.

• Transactions of Materials Processing
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• v.17 no.1
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• pp.46-51
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• 2008

Polycrystalline materials such as steels(BCC) and aluminum alloys(FCC) show the strain hardening and the strain rate hardening during the plastic deformation. The strain hardening is induced by deformation resistance of dislocation glide on some crystallographic systems and increase of the dislocation density on grain boundaries or inner grain. However, the phenomenon of the strain rate hardening is not demonstrated distinctly in the rage of $10^{-2}$ to $10^2/sec$ strain rate. In this paper, tensile tests for various strain rates are performed in the rage of $10^{-2}$ to $10^2/sec$ then, specimens are extracted on the same strain position to investigate the microscopic behavior of deformed materials. The extracted specimens are investigated by using the electron backscattered diffraction(EBSD) and transmission electron microscopy(TEM) results which show the effect of texture orientation, grain size and dislocation behavior on the strain rate hardening.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.46-46
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• 2006

$SrTiO_3$ was annealed at two different annealing times (1 h and 16 h) to investigate the annealing effect on the grain size and orientation distribution. Electron backscattered diffraction (EBSD) was used to analyze the grain size and grain orientation distributions of the $SrTiO_3$. It is possible to understand the annealing effect on the microstructure evolution, by comparing the grain size and orientation distribution of the $SrTiO_3$ as a function of annealing time.