• Progress in Superconductivity and Cryogenics
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• v.25 no.4
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• pp.14-18
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• 2023

We have investigated the behavior induced by Ga substitution in B-1212 system and observed an anomalous superconductor-like resistivity drop with an onset near 260 K and an offset at 248 K in the nominal (B_0.65Ga_0.35)(Ba_1.25Sr_0.75)(Er_0.5Ca_0.5)Cu₂O_z compound. However, this property degraded with repeated cycling. Systematic studies of the superconducting properties of the (B_1-xGa_x)(Ba_1.25Sr_0.75)(Er_0.5Ca_0.5)Cu₂O_z compounds are reported and discussed in the context of the anomalous resistivity transition.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.727-731
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• 2013

In this study, green barium strontium silicate phosphor ($BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$) was synthesized using a solid-state reaction method in air and reducing atmosphere. Investigation of the firing temperature indicates that a single phase of $BaSrSiO_4$ is formed when the firing temperature is higher than $1400^{\circ}C$. The effect of firing temperature and doping concentration on luminescent properties are investigated. The light-emitting property was the best when the molar content of $Eu_2O_3$ was 0.025 mol. Also, the luminescent brightness of the $BaSrSiO_4$ fluorescent substance was the best when the particle size of the barium was $0.5{\mu}m$. $BaSrSiO_4$ phosphors exhibit the typical green luminescent properties of $Eu^{3+}$ and $Eu^{2+}$. The characteristics of the synthesized $BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$ phosphor were investigated using X-ray diffraction (XRD) and scanning electron microscopy. The maximum emission band of the $BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$ was 520 nm.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.145-149
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• 2016

$(Bi_{1/2}Na_{1/2})_{0.94}Ba_{0.06}(Ti_{1-x}Nb_x)O_3$ (BNBTxNb) ceramics were investigated in terms of the crystal structure as well as the ferroelectric, dielectric, and piezoelectric properties. While little change was observed in the microstructure except for a slight decrease in the average grain size, a significant change was noticed in the temperature dependence of dielectric and piezoelectric properties. It was shown that the property changes are closely related to the downward shift in the position of the ferroelectric-to-relaxor transition temperature with increasing amount of Nb doping. A special emphasis is put on the fact that Nb doping is so effective at decreasing the ferroelectric-to-relaxor transition temperature that even at no more than 2 at.% Nb addition, the transition temperature was already brought down slightly below room temperature, resulting in the birth of a large strain at 0.46 %, equivalent to $S_{max}/E_{max}=767pm/V$.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Applied Chemistry for Engineering
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• v.8 no.5
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• pp.722-728
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• 1997

This study was investigated to find storage material of thermal energy storage system for a vehicle with the basic material of $Ba(OH)_2{\cdot}8H_2O$ and to test a feasibility of it. Experiment was investigated usability for long time and state change and thermal property after cycle with $Ba(OH)_2{\cdot}8H_2O$ and misxture doping additive to it. The result of this research indicated the mixture adding $Sr(OH)_2{\cdot}8H_2O$ to $Ba(OH)_2{\cdot}8H_2O$ have high feasibility as storage material for thermal energy storage system. This mixture did not exhibit the state change during 1300 cycles and the rate of decrease of heat realese energy was about 2%, relatively low value.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.283-288
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• 2014

PdO-doped $BaZr_{0.85}Y_{0.15}O_{3-\delta}$ (BZPY) proton conductors have been proposed as applicable for intermediate temperature electrolytes for protonic ceramic fuel cells (PCFCs) because the PdO doping is effective for improving the proton conductivity of $BaZr_{0.85}Y_{0.15}O_{3-\delta}$ (BZY) with high affinity for hydrogen. In order to further improve the conductivity of BZPY, two-phase composite electrolytes consisting of a BZPY and molten carbonate were designed. Dense BZPY-based composite electrolytes were fabricated after sintering at $670^{\circ}C$ for 4 h, since molten carbonates fill the grain boundary of the porous BZPY matrix. Furthermore, BZPY/$(Li-0.5Na)_2CO_3$ composites show a significantly enhanced protonic conductivity at intermediate temperatures. This may be because easy proton transport is possible through the interface of the carbonate and oxide phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.305-306
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• 2006

자동차의 난방 열원은 HVAC(Heating, Ventilating & Air Conditioning)에 내장되어 있는 히터코어 (Heater Core) 에서 공급하게 되며, 이 히터코어는 엔진에서 가열된 냉각수 열원을 이용하게 된다. 그러나 최근 디젤 엔진의 경우 연소효율의 개선과 CEGR(Cooled Exhaust Gas Recirculation) 시스템의 적용으로 냉각부하가 증가하여 냉각수가 가지는 가용 열원이 기종보다 약 30~40% 정도 저하되고 있다. 따라서 디젤 자동차 및 하이브리드용 자동차의 난방 보조 히터의 국산화 개발이 시급해진 상황이며 초정밀, 고효율 보조 히터의 개발이 요구되고 있다. 현재 적용되고 있는 보조 히터 중에서 PTC 히터는 PTC 소자의 발열을 이용하여 공기를 직접 가열하기 때문에 추가적인 연료소비가 없고 소형 및 저가라는 장점이 있다. PTC 세라믹 소자는 $BaTiO_3$를 모체로 하며, 이의 특성 항상 및 제어를 위해서는 적절한 dopant를 선택하여 균일하게 doping 해야 한다. 지금까지 dopant에 따른 구성 요소 및 역할은 비교적 잘 알려져 있다. 하지만, 자동차용으로 사용되기 위해서는 12V의 저전압에서 동작해야 하며, 또한 소자의 두께가 얇아지게 됨에 따라서 발생하는 전기적 short와 같은 문제점들을 해결하여야 한다. 따라서 본 연구에서는 PTC 세라믹 소자에서 도펀트 종류와 양 조절을 통한 저저항을 확보하고, PTC 세라믹 소자의 박막화를 달성하고자 하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.33.1-33.1
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• 2011

Strontium doped lanthanum manganite (LSM) with perovskite structure for SOFC cathode material shows high electrical conductivity and good chemical stability, whereas the electrical conductivity at intermediate temperature below $800^{\circ}C$ is not sufficient due to low oxygen ion conductivity. The approach to improve electrical conductivity is to make more oxygen vacancies by substituting alkaline earths (such as Ca, Sr and Ba) for La and/or a transition metal (such as Fe, Co and Cu) for Mn. Among various cathode materials, $LaSrMnCuO_3$ has recently been suggested as the potential cathode materials for solid oxide fuel cells (SOFCs). As for the Cu doping at the B-site, it has been reported that the valence change of Mn ions is occurred by substituting Cu ions and it leads to formation of oxygen vacancies. The electrical conductivity is also affected by doping element at the A-site and the co-doping effect between A-site and B-site should be described. In this study, the $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3{\pm}{\delta}}$ ($0{\leq}x{\leq}0.4$) systems were synthesized by a combined EDTA-citrate complexing process. The crystal structure, morphology, thermal expansion and electrical conductivity with different Sr contents were studied and their co-doping effects were also investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.632-635
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.