• 한국전기전자재료학회논문지
• /
• 제15권11호
• /
• pp.933-938
• /
• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• 한국재료학회지
• /
• 제15권6호
• /
• pp.408-412
• /
• 2005

[ $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ ] phosphor particles with high photoluminescence intensity under long wavelength ultraviolet were prepared by spray pyrolysis. We investigated the effect of $NH_4F$ flux added into starting solution on the morphology and photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor prepared by spray pyrolysis. $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux had the maximum photoluminescence intensity at the post-treatment temperature of $1200^{\circ}C$ and the maximum photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from the starting solution containing $NH_4F$ flux was $137\%$ of that of the phosphor particles prepared from the starting solution without flux material. $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux had larger size and more aggregated morphology than those prepared from starting solution without flux material. The photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux above $3wt.\%$ had high photoluminescence intensities. The addition amount of $NH_4F$ flux showing the maximum photoluminescence intensity was $12wt.\%$. The optimum amount of $NH_4F$ flux was $5wt.\%$ when we considered the morphological and photoluminescence characteristics of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ ohosphor particles prepared by spray pyrolysis.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.611-614
• /
• 2004

[ $Ba(Zn_{1/3}Nb_{2/3})O_3$ ] (BZN) 세라믹스의 소결 온도는 약 $1350^{\circ}C$ 이다. 그러나 $B_2O_3$가 첨가된 경우, BZN 세라믹스는 $900^{\circ}C$에서 소결되었다. $BaB_4O_7$, $BaB_2O_4$ 그리고 $BaNb_2O_6$ 이차상이 $B_2O_3$가 첨가된 BZN 세라믹스에서 관찰되었다. $BaB_4O_7$과 $BaB_2O_4$ 이차상은 약 $900^{\circ}C$에서 공정 온도를 가지기 때문에 $B_2O_3$를 첨가한 BZN 세라믹스론 $900^{\circ}C$에서 소결하는 동안 액상으로 존재할 것으로 여겨지며, 그것이 BZN 세라믹스의 소결온도를 낮출 것으로 생각된다. 소결 온도의 증가에 따라 유전 상수 ($\varepsilon_r$)와 품질 계수 ($Q{\times}f$)의 값은 증가하였는데, 이는 밀도의 증가에 기인한다. 그러나 $B_2O_3$의 첨가량이 많은 경우 Q 값은 감소하는데, 이는 이차상의 존재가 품질계수의 저하를 초래한다고 생각된다. 2.0 mol% $B_2O_3$가 첨가된 BZN 세라믹스를 $950^{\circ}C$에서 2시간 동안 소결하는 경우, $Q{\times}f$=13.600 GHz, $\varepsilon_r$=37.6 그리고 공진 주파수 온도계수 ($\tau_f$) = 19 ppm/$^{\circ}C$의 유전특성을 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.210-213
• /
• 2002

The blue phosphor, $BaMgAl_{10}O_{17}$:$Eu^{2+}$, showing a blue emission band at about 450 nm were prepared by solid state reaction of BaC $O_3$, A $l_2$ $O_3$, MgO and E $u_2$ $O_3$ with Al $F_3$ as a flux. The thermal quenching of BaMgAl $O_{17}$:E $u^{2+}$ phosphor significantly reduces the intensity of the blue emission. It is reduced by an amount of 50% after heating at around 800$^{\circ}C$ for 1 hr. The red emission in the 580∼720 nm region of $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_1$ and $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_2$ transition of $Eu^{3+}$ is produced from the phosphor heated above 1,100$^{\circ}C$. The EPR spectrum also reveals that some part of E $u^{2+}$ ions are oxidized to trivalent ions above 1,100$^{\circ}C$ at around 90 and 140mT. This oxidation evidence is also detected from XANES absorption spectra for $L_{III}$ shell of Eu ions: an absorption peak is at 6,977eV of E $u^{2+}$ and 6,984eV of $Eu^{3+}$. The combined X-ray and neutron data suggests that the new phase of EuMgA $l_{11}$ $O_{19}$ magnetoplumbite structure may be formed by heat treatment.eat treatment.tment.eat treatment.tment.t.

• 대한전기학회논문지
• /
• 제43권4호
• /
• pp.613-619
• /
• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.

• Journal of Electrical Engineering and Technology
• /
• 제9권5호
• /
• pp.1719-1723
• /
• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.

• 한국결정성장학회지
• /
• 제4권3호
• /
• pp.252-261
• /
• 1994

본 연구는 수산염법에 의해 화학적으로 균일하며 고순도인 미립의 $(Ba_{1-X}Sr_X)ZrO_3$ 분말을 합성하고 합성된 분말의 미세구조와 유전특성을 조사하여 공진주파수의 온도계수$({gamma}_f)$가 안정한 $(Ba_{1-x}Sr_x)Zr0_3$의 최적 합성조건을 규명하고자 하였다. 6가지 조성의 $(Ba{_1-X}Sr_x)ZrO_3$ (X=0, 0.2, 0.4, 0.6, 0.8, 1) 화합물을 수산염법으로 얻은 후 이를 $1000^{\circ}C$에서 하소하여 결정질 $(Ba_{1-X}Sr_X)ZrO_3$ 분말을 합성하였다. 합성한$(Ba_{1-x}Sr_x)Zr0_3$ 분말은 구형으로 $0.2 {mu}m$이하의 평균 입경을 가졌으며, ${\tau}_c$는 Ba에 대해 Sr이 0.5 정도 치환된 조성에서 0이 되는 조성을 유추할 수 있었다.

• 한국진공학회지
• /
• 제22권4호
• /
• pp.181-187
• /
• 2013

$Dy^{3+}$ 이온이 도핑된 $BaMoO_4$ 형광체 분말을 고상반응법으로 합성하였으며, 형광체의 결정 구조, 입자의 형상과 크기, 흡광과 발광 특성을 조사하였다. 모든 형광체 분말의 결정 구조는 $Dy^{3+}$ 이온의 몰 비에 관계없이 주 회절 피크 (112)를 갖는 정방 정계이었다. $Dy^{3+}$ 이온의 몰 비가 증가함에 따라 결정 입자는 용해되면서 큰 덩어리 형태의 결정 입자를 형성하였다. 흡광 스펙트럼은 293 nm에 피크를 갖는 전하 전달 밴드와 230~320 nm 영역에서 상대적으로 세기가 약한 다수의 $Dy^{3+}$ 이온의 전이 신호로 구성되었다. 발광 스펙트럼의 경우에 $Dy^{3+}$ 이온의 $^4F_{9/2}{\rightarrow}^6H_{11/2}$와 $^4F_{9/2}{\rightarrow}^6H_{9/2}$ 전이에 의한 666 nm와 754 nm에 피크를 갖는 적색 발광의 세기는 미약하였고, $^4F_{9/2}{\rightarrow}^6H_{15/2}$와 $^4F_{9/2}{\rightarrow}^6H_{13/2}$ 전이에 의한 각각 486 nm와 577 nm에 피크를 갖는 청색과 황색 발광의 세기는 상대적으로 매우 컸다. 실험 결과는 $Dy^{3+}$의 황색과 청색의 발광 세기 비를 제어함으로써 백색 발광을 구현할 수 있음을 제시한다.

• 한국광학회:학술대회논문집
• /
• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
• /
• pp.140-142
• /
• 1989

1.54um 파장에서 최대 형광을 나타내는 ZrF4-BaF2-LaF3-AlF3-NaF : ErF3 유리를 built-in-casting 법에 의해 제조하였다. Er+3 이온을 0.2몰부터 4몰까지 첨가하였으며, Er+3 이온의 4I13/2 준위의 lifetime 은 Er+3 이온 0.2몰부터 2몰까지 28msec로 최대값을 갖으며 4몰일때는 급격히 감소하였다.

• 대한전기학회논문지
• /
• 제44권8호
• /
• pp.1068-1074
• /
• 1995

Effect of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ addition on the phase changes and microwave dielectric properties of BaTi $O_{3}$-3Ti $O_{2}$ ceramics were investigated. Addition of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ to BaTi $O_{3}$-3Ti $O_{2}$ resulted in the formation of Ba $Ti_{4}$$O_{9}$, $Ba_{2}$ $Ti_{9}$ $O_{20}$, Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_{3}$, and Ti $O_{2}$ phases. Ba $Ti_{4}$$O_{9}$ phase was gradually transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$. This was identified by XRD and microstructure. As the Ba $Ti_{4}$$O_{9}$ phase transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$ phase, the dielectric constant increased to 37.5. Q*f$_{o}$ value was 40000 at x=0.04, and the temperature coefficient of resonant frequency was +10ppm/.deg. C.C.. C.C.