• Title/Summary/Keyword: BSCCO(2001)

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Joining Characteristics of Plasma Sprayed BSCCO Superconducting Coatings (플라즈마 용사 BSCCO(Bismuth Strontium Calcium Copper Oxide) 초전도 피막의 접합 특성)

  • Park, Jung-Sik;Cho, Chang-Eun;Ko, Young-Bong;Park, Kwang-Soon;Park, Kyeung-Chae
    • Journal of the Korean institute of surface engineering
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    • v.46 no.5
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    • pp.181-186
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    • 2013
  • We performed plasma spraying for 2001 (Bi:Cu = 2:1), 0212 (Sr:Ca:Cu = 2:1:2) oxide powders. $Bi_2Sr_2CaCu_2Ox$ (2212) superconductor has been prepared by PMP-AT (partial melting process-annealing treatment). The 2212 phase is synthesized between Sr-Ca-Cu oxide coating layer (0212) and Bi-Cu oxide coating layer (2001) by movement of partial melted Bi on 2001 layer and the diffusion reaction (Cu, Sr, Ca) after PMP-AT. There are two different coating layers on joining process. The one is ABAB coating layers and the other is BAAB coating layers by arrangement of 2001 (A), 0212 (B) layers. We performed heat treatment these two different coating layers processes under same PMP-AT conditions. We obtained Bi-2212 superconducting layers at each experimental condition, and the result of MPMS, the critical temperature was showed about 78 K. But the microstructure images and result of EDS as each experimental variable were showed about the qualitatively different Bi-2212 superconducting phases. We also deduced the generation mechanism of Bi-2212 superconducting layer as a result of these experimental data, microstruc ture images, EDS data and phase diagram.

Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition by Ion Beam Sputtering

  • Lee, Hee-Kab;Park, Yong-Pil;Kim, Jeong-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.4
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    • pp.7-10
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    • 2000
  • Bi$_2$Sr$_2$CuI$\_$x/(Bi(2001)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition , 10 %-ozone/oxygen mixture gas of typical 25.0$\times$10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less then 10 units cell and then c-axis oriented Bi(2201) is grown.

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A Study on Joining Method of BSCCO(223) Multifilamentary Tape (BSCCO(2223) 다심 초전도 선재의 접합공정 연구)

  • 김정호;김규태;주진호;나완수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.6
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    • pp.511-517
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    • 2001
  • We evaluated the electrical properties of 37 multifilamentary jointed tapes processed by superconducting joint. In the superconducting joining method, a lap-joint was used. Tapes were selectively etched, and exposed superconducting cores of the two tapes were brought into contact with each other and then only the joined region was uniaxially pressed in the range of 1,000 to 2,50 MPa. The critical current ratio(CCR) and n-value of the jointed tape were evaluated as a function of uniaxial pressure and number of step in the contacting region. It was observed that the CCR was dependent on the number of step, but almost independent of uniaxial pressure. The highest critical current ratio and n-value were obtained to be 58% and 26%, respectively, for the jointed tape to the tape itself.

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Fabrication Condition for Single Phase of BSCCO Thin Film

  • An, In-Soon;Chun, Min-Woo;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.327-330
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    • 2001
  • Phase intergrowth in BSCCO thin films have been investigated. It turned out from XRD analyses of these phases that molar fraction of each constituent phase in the intergrowth thin film can be exhibited as a function of substrate temperature and ozone pressure. Superconducting behavior of the intergrowth thin film is also discussed.

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Epitaxial Growth of BSCCO Films by Leyer-by-Layer Deposition (순차 증착에 의한 BSCCO 박막의 에피택셜 성장)

  • 안준호;박용필;김정호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.10
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    • pp.855-860
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    • 2001
  • Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin film were fabricated by atomic layer-by -layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.t.

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A study of texture through the depth of superconductor core (BSCCO 선재에서 초전도심의 깊이에 따른 집합조직 연구)

  • 지봉기;임준형;이동욱;장석헌;주진호;나완수
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2001.02a
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    • pp.6-8
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    • 2001
  • We evaluated the degree of texture through depth of the superconductor core of Bi-Sr-Ca-Cu-O(BSCCO) superconductor tape. The degree of texture was characterized by pole figure analysis, indicating that the degree of texture varied significantly with depth of the superconductor core. It was observed that the degree of texture was higher near the interface than inside the superconducting core. Based on the result of degree of texture, the region near the interface is thought to carry significant current compared to that inside the core.

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Fabrication of Joining of 37 Multi-filamentary BSCCO(2223) Tape (37심 BSCCO(2223) 다심 초전도선재의 접합공정 연구)

  • 김정호;오승진;김규태;김호진;주진호;나완수
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2001.02a
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    • pp.3-5
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    • 2001
  • We evaluated the electrical properties of 37 multifilamentary jointed tapes processed by superconducting joint. In the superconducting joining method. a lap-joint was used. Tapes were selectively etched and exposed superconducting cores of the two tapes were brought into contact with each other and then only the joined region was uniaxially pressed in the range of 1,000 to 2,500 MPa. The current carrying capacity and n-value of the jointed tape were evaluated as a function of uniaxial pressure. The highest current carrying capacity and n-value were obtained to be 58%, 26% for the jointed tape to the tape itself.

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Characteristics of BSCCO Superconductor Tube Using Partial Melting Process (부분용융법을 이용한 BSCCO 초전도 튜브 특성)

  • 박용민;장건익
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2001.02a
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    • pp.25-28
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    • 2001
  • Bi-2212 HTS tube was fabricated by centrifugal forming process(CFP). As a variation of melt casting process(MCP) or centrifugal casting technique, the centrifugal forming process is a flexible method for manufacturing Bi-2212 bulk tubes and has been optimized to achieve smooth surface and uniform thickness. At this process, the slurry was prepared in the mixing ratio of 10:1 between Bi-2212 powder and binder and initially charged into the rotating mold under the speed of 300~450 rpm Heat-treatment was performed at the temperature ranges of 860 ~ $890^{\circ}C$ in air for partial melting. The HTS tube fabricated by centrifugal forming process at $890^{\circ}C$ under the rotating speed of 450 rpm was highly densified and the plate-like grains with more than 20$\mu$m were well oriented along the rotating axis. The measured Tc and Jc at 10K were around 85K and 3,000A/cm2 respectively.

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Characteristics of BSCCO Thin Film by Layer-by-layer Deposition (순차 스퍼터 법에 의한 BSCCO 박막의 특성)

  • Lee, Hee-Kab;Park, Yong-Pil;Kim, Gwi-Yeol;Oh, Geum-Gon;Choi, Woon-Shik;Cho, Choon-Nam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.281-283
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    • 2001
  • $Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

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